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  DF3-2S-2R261 Datasheet PDF File

For DF3-2S-2R261 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    TOSHIBA[Toshiba Semiconductor]
Part No. DF3A8.2LFU
Description DIODES FOR PROTECTING AGAINST ESD

File Size 81.99K  /  3 Page

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HUA FENG CIRCUIT





    31DF4 31DF3

Galaxy Semi-Conductor Holdings Limited
Part No. 31DF4 31DF3
Description SUPER FAST RECTIFIERS

File Size 49.10K  /  2 Page

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    DF3A6.8LFV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A6.8LFV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 1.90 to 2.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 119.34K  /  3 Page

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    DF3A5.6LFE

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A5.6LFE
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 16.01; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 131.60K  /  3 Page

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    DF3A5.6LFV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A5.6LFV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.85 to 16.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 125.13K  /  3 Page

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    DF3A6.2LFE

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A6.2LFE
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 17.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 138.76K  /  3 Page

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    DF3A6.2LFV

Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A6.2LFV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 17.56 to 18.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 17.56 to 18.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 116.64K  /  3 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. DF3A6.8LFE
Description Diodes for Protecting Against ESD

File Size 84.11K  /  3 Page

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    TOSHIBA
Part No. DF3A8.2LFE
Description Diodes for Protecting Against ESD

File Size 81.73K  /  3 Page

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    DF3A8.2LFV

Toshiba Corporation
Toshiba Semiconductor
Part No. DF3A8.2LFV
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 21.08; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)

File Size 126.44K  /  3 Page

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For DF3-2S-2R261 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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