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ge-avalanche Datasheet PDF File

For ge-avalanche Found Datasheets File :: 2078 Search Time::1.984ms
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				IRF[International Rectifier]
Part No.	IRGPC40U
OCR Text	...C = 1.0mA -- 2.2 3.0 IC = 20A V GE = 15V -- 2.7 -- V IC = 40A See Fig. 2, 5 -- 2.3 -- IC = 20A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -13 -- mV/C VCE = VGE, IC = 250A 11 18 -- S VCE = 100V, I C = 20A -- -- 250 A VGE = 0V, V CE = 600...
Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=20A)
File Size	211.38K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPC40 IRGPC40F
OCR Text	... Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(VCES), VGE=20V, L=10H, RG= 10, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse...
Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)
File Size	214.50K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFI530N
OCR Text	... , D ra in-to-S o urc e V o lta ge (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 R...Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same...
Description	HEXFET Power MOSFET HEXFET?? Power MOSFET
File Size	129.63K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFR5305 IRFU5305 IRFRU5305 IRFR5305TR IRFR5305TRL IRFR5305TRR IRFR5305PBF IRFU5305PBF
OCR Text	...-V G S , G ate -to-Source Volta ge (V ) T J , Junction T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized...Avalanche Energy Vs. Drain Current 50K 12V .2F .3F VDS IRFR/U5305 Peak Diode Recovery dv/d...
Description	-55V Single P-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=-55V Rds(on)=0.065ohm Id=-31A) HEXFET? Power MOSFET Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A) -55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
File Size	155.18K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPC50F
OCR Text	...C = 1.0mA -- 1.4 1.7 IC = 39A V GE = 15V -- 2.0 -- V IC = 70A See Fig. 2, 5 -- 1.7 -- IC = 39A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -14 -- mV/C VCE = VGE, IC = 250A 21 30 -- S VCE = 100V, I C = 39A -- -- 250 A VGE = 0V, V CE = 600...
Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=39A)
File Size	231.97K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	6TQ045S 6TQ 6TQ035 6TQ035S 6TQ040 6TQ040S 6TQ045
OCR Text	...15 0 0 1 2 3 4 5 6 7 8 9 A vera ge Forw ard C urren t - I F(A V) (A) 0 0 1 2 3 4 5 6 7 8 9 Averag e Forw a rd C urren t - I F (A V ) (A) Fig. 5 - Maximum Allowable Case Temperature Vs. Average Forward Current 10 0 0 N on -Repe titive...
Description	SCHOTTKY RECTIFIER
File Size	156.48K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7220
OCR Text	... G a te -to -S o u rc e V o lta ge (V ) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On...Avalanche Energy (mJ) 10 250 ID -4.9A -8.8A BOTTOM -11A TOP -ID , Drain Current (A) 8...
Description	HEXFET? Power MOSFET
File Size	80.68K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRG4BC40F
OCR Text	...ing Losses (mJ) RG TJ V CC V GE = = = = 10 150C 480V 15V 1000 VG E E 2 0V G= T J = 125 C 100 6 S A F E O P E R A TIN G A R E A 4 10 2 0 0 10 20 30 40 50 60 A 1 1 10 100 1000 I C , Collector-to-E...
Description	600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) 绝缘栅双TRANSISOR（VCES和\u003d 600V电压的Vce（on）典\u003d 1.50V，@和VGE \u003d 15V的，集成电路\u003d 27A条）
File Size	165.44K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRG4PC50U IRG4PC50U-E
OCR Text	...ate-to-Emitter Voltage (V) V GE C ie s C re s C o es = = = = 0V , f = 1M Hz C ge + C gc , C ce SH OR T ED C gc C ce + C gc 20 VC E = 400V I C = 27A C, Capacitance (pF) 16 6000 C ie s 12 4000 C oe s 2000 ...
Description	55 A, 600 V, N-CHANNEL IGBT, TO-247AD 55 A, 600 V, N-CHANNEL IGBT, TO-247AC 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.65V的，@和VGE \u003d 15V的，集成电路\u003d 27A条）
File Size	146.22K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTD20N03L27 NTD20N03L27G NTD20N03L27T4 NTD20N03L27T4G NTD20N03L27-1 NTD20N03L27-1G NTD20N03L27-001
OCR Text	... Fall Time Gate Charge Ga e C a ge (VDS = 48 Vdc, ID = 15 Adc, Vdc Adc VGS = 10 Vdc) (Note 2) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-...AVALANCHE ENERGY (mJ) 350 Figure 10. Diode Forward Voltage vs. Current ID = 24 A 300 250 200 1...
Description	Power MOSFET Power MOSFET 20 Amps, 30 Volts
File Size	60.35K / 6 Page	View it Online	Download Datasheet

For ge-avalanche Found Datasheets File :: 2078 Search Time::1.984ms
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