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implanted Datasheet PDF File

For implanted Found Datasheets File :: 6360 Search Time::1.297ms
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				BOURNS INC Power Innovations Ltd
Part No.	TISP2125F3 TISP2150F3 TISP2180F3 TISP2180F3SL
OCR Text	... SECONDARY PROTECTION q Ion-implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE `2125F3 `2150F3 `2180F3 VDRM V 100 120 145 V(BO) V 125 150 180 D PACKAGE (TOP VIEW) T NC NC R 1 2 3 4 ...
Description	180 V, 6 A, SILICON SURGE PROTECTOR DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
File Size	602.71K / 18 Page	View it Online	Download Datasheet

				BOURNS INC
Part No.	TISP3350H3SL
OCR Text	...n devices are fabricated in ion-implanted planar structures to ensu re pre- cise and matched breakover control and are virtually transparent to the system in normal operation. itu-t k.20/21 rating . . . . . . . . 8 kv 10/700, 200 a 5/310 io...
Description	TISP Thyristor Overvoltage Protectors Dual Bidirectional overvolt protecter
File Size	372.15K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	HYS72D32500GR-7F-B HYS72D64500GR-7F-B HYS72D128521GR-7-B HYS72D128520GR-7F-B HYS72D128521GR-7F-B HYS72D128521GR-8-B HYS72D64500GR-8-B
OCR Text	...rt device or are intended to be implanted in the human body, that device orand/or maintain and support devices or systems system, or to affect the safety or effectiveness of or to support system. Life support devices and/or protect human li...
Description	Registered DDR SDRAM-Modules 注册DDR SDRAM内存模块 Connector Wall Plate; Color:Almond; Leaded Process Compatible:Yes; No. of Ports:2 RoHS Compliant: Yes 注册DDR SDRAM内存模块 Connector Wall Plate; Color:Electric White; Leaded Process Compatible:Yes; No. of Ports:4 RoHS Compliant: Yes TRIMMER, 100R DDR SDRAM Modules - 512MB (64Mx72) PC2100 2-2-2 1-bank DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank
File Size	683.27K / 39 Page	View it Online	Download Datasheet

				BOPOLARICS ETC Bipolarics, Inc.
Part No.	B20V140
OCR Text	...dvanced process techniques: ion implanted junctions, ion implanted ballast resistors and gold metallization. When the B20V140 is bonded common emitter, linear output power of 1 Watt can be achieved. By driving part type B20V180 or B20V1160 ...
Description	SILICON MICROWAVE POWER TRANSISTOR Medium power silicon microwave transistor
File Size	20.91K / 2 Page	View it Online	Download Datasheet

				Bourns Electronic Solutions
Part No.	TISP3260F3DR-S
OCR Text	...ervoltage Protector Series Ion-implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE `3240F3 `3260F3 `3290F3 `3320F3 `3380F3 VDRM V 180 200 220 240 270 V(BO) V 240 260 290 320 380 D Package (Top...
Description	HIGH-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
File Size	609.00K / 12 Page	View it Online	Download Datasheet

				Bourns Electronic Solutions
Part No.	TISP11082F3SL
OCR Text	...ervoltage Protector Series Ion-implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE `1072F3 `1082F3 VDRM V - 58 - 66 V(BO) V - 72 - 82 D Package (Top View) T NC NC R 1 2 3 4 8 7 6 5 ...
Description	Overvoltage Protector
File Size	744.64K / 13 Page	View it Online	Download Datasheet

				Bourns Electronic Solutions
Part No.	TISP1120F3D
OCR Text	... (top view) *rohs compliant ion-implanted breakdown region - precise and stable voltage planar passivated junctions - low off-state current <10 a low voltage overshoot under surge 1 2 3 4 5 6 7 8 mdxx ae b g g g g nc t r nc nc - no intern...
Description	DUAL FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTOR
File Size	174.40K / 5 Page	View it Online	Download Datasheet

				TRIQUINT[TriQuint Semiconductor]
Part No.	TQTRX
OCR Text	...city. Precision NiCr resistors, implanted resistors, and high value MIM capacitors are included. Advanced 0.6 m enhancement/depletion mode MESFET devices include an integrated power MESFET, general purpose D-Mode MESFET, and Enhancement Mod...
Description	Advanced Passives & MESFET Foundry Service
File Size	172.25K / 6 Page	View it Online	Download Datasheet

				Power Innovations Limited POINN[Power Innovations Ltd]
Part No.	TISP4082
OCR Text	... SECONDARY PROTECTION q Ion-implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE `4082 V(Z) V 58 V(BO) V 82 DO-220 PACKAGE (TOP VIEW) A(T) 1 B(R) 2 q Planar Passivated Junc...
Description	SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
File Size	103.01K / 5 Page	View it Online	Download Datasheet

For implanted Found Datasheets File :: 6360 Search Time::1.297ms
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