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Panasonic
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| Part No. |
XN07651
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| OCR Text |
... methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : pulse measurement note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2... |
| Description |
Composite Device - Composite Transistors
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| File Size |
103.42K /
5 Page |
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it Online |
Download Datasheet
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Panasonic, Corp.
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| Part No. |
NP043A2
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| OCR Text |
... methods are based on japanese industrial standard jis c 7030 measuring methods for transistors.
np043a2 2 sjj00285aed common characteristics chart p t ? t a characteristics charts of tr1 i c ? v ce v ce(sat) ? i c h fe ? i c... |
| Description |
Composite Device - Composite Transistors
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 80 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
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| File Size |
105.31K /
4 Page |
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it Online |
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Panasonic, Corp.
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| Part No. |
LN59L
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| OCR Text |
... methods are based on japanese industrial standard jis c 7031 measuring methods for diodes. 2. cutoff frequency: 1 mhz f c : 10 log p o at f = f c = ? 3 p o at f = 50 khz 3. * : radiant power p o shows each value of radiant flu... |
| Description |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
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| File Size |
193.56K /
3 Page |
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it Online |
Download Datasheet |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
NP0H3A3
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| OCR Text |
...g methods are based on JAPANESE industrial STANDARD JIS C 7030 measuring methods for transistors.
* Tr2
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) C... |
| Description |
Silicon PNP epitaxial planar type (Tr1), Silicon NPN epitaxial planar type (Tr2)
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| File Size |
95.04K /
5 Page |
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it Online |
Download Datasheet |
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Panasonic
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| Part No. |
UP04315
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| OCR Text |
... methods are based on japanese industrial standard jis c 7030 measuring methods for transistors.
up04315 2 sjj00268bed common characteristics chart p t ? t a characteristics charts of tr1 i c ? v ce v ce(sat) ? i c h fe ? i c... |
| Description |
Composite Device - Composite Transistors
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| File Size |
101.76K /
4 Page |
View
it Online |
Download Datasheet |
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Panasonic
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| Part No. |
XP0NG8A
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| OCR Text |
...g methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. ? sbd ? s b d ? parameter symbol conditions min typ max unit forward voltage v f v f v i f = 100 ma 1 . 2 v reverse voltage v r i r = ... |
| Description |
Composite Device - Composite Transistors
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| File Size |
265.63K /
3 Page |
View
it Online |
Download Datasheet |
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Panasonic
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| Part No. |
XP03390
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| OCR Text |
... methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. electrical characteristics t a = 25 c 3 c ? tr1 note) measuring methods are based on japanese industrial standard jis c 7030 measu... |
| Description |
Composite Device - Composite Transistors
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| File Size |
106.82K /
5 Page |
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it Online |
Download Datasheet |
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Panasonic
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| Part No. |
XN0NE92
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| OCR Text |
... methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. observe precautions for handling. electrostatic sensitive devices. 3. * : pulse measurement 1 : cathode 2 : drain 3 : gate 4 : source 5 : a... |
| Description |
Composite Device - Composite Transistors
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| File Size |
57.64K /
3 Page |
View
it Online |
Download Datasheet |
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