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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FU-627SLD-F1
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| OCR Text |
...H** structure fabricated by all mocvd process *Multiple quantum well **Facet selective-growth buried heterostructure APPLICATION Trunk Line,FitL
ABSOLUTE MAXIMUM RATINGS Parameter Laser diode
(Tc=25 C) Symbol Conditions CW Rating 2.4 ... |
| Description |
1.55 um LD MODULE WITH SINGLEMODE FIBER PIGTAIL
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| File Size |
41.54K /
3 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
LX5503-LQ LX5503
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| OCR Text |
...ar Transistor (HBT) IC process (mocvd). It operates at a single low voltage supply of 3.3V with +25dBm of P1dB and 22dB power gain between 5.15-5.35GHz and 18dB gain up to 5.85GHz.
For +18dBm OFDM output power (64QAM, 54Mbps), the PA pro... |
| Description |
InGaP HBT 5-6GHz Power Amplifier
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| File Size |
469.73K /
13 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
LX5503ELQ LX5503E
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| OCR Text |
...ar Transistor (HBT) IC process (mocvd). It operates at a single supply of 3.3V with +26dBm of P1dB, and power gain of 21dB between 4.9-5.35GHz and 16dB up to 5.85GHz.
For +18dBm OFDM output power (64QAM, 54Mbps), the PA provides a very l... |
| Description |
InGaP HBT 4 - 6GHz Power Amplifier
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| File Size |
236.29K /
9 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
LX5506E-LQ LX5506E LX5506ELQ
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| OCR Text |
...ar Transistor (HBT) IC process (mocvd). It also has an integrated
differential output power detector pair to help reduce BOM cost and PCB board space for system implementation. LX5506E is available in a 16-pin 3mmx3mm micro-lead package ... |
| Description |
Wireless LAN Power Amplifier
InGaP HBT 4 ?6GHz Power Amplifier
InGaP HBT 4 - 6GHz Power Amplifier
InGaP HBT 4 6GHz Power Amplifier
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| File Size |
313.83K /
7 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
LX5506M
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| OCR Text |
...ar Transistor (HBT) IC process (mocvd). It operates with a single positive voltage supply of 3.3V (nominal), with up to +22dBm linear output power for 802.11a OFDM spectrum mask compliance, and low EVM of -30dB for up to +18dBm output power... |
| Description |
InGaP HBT 4.5 - 6GHz Power Amplifier
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| File Size |
62.03K /
2 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
LX5506
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| OCR Text |
...ar Transistor (HBT) IC process (mocvd). It operates at a single positive voltage supply of 3.3V (nominal), with +26dBm of P1dB and up to 23dB power gain in the 5.15 5.85GHz frequency range with a simple output matching capacitor pair.
Fo... |
| Description |
InGaP HBT 4.5 - 6GHz Power Amplifier
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| File Size |
496.83K /
10 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
LX5512BLQ LX5512B LX5512BLQTR
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| OCR Text |
...ar Transistor (HBT) IC process (mocvd). It operates at a single low voltage supply of 3.3V with 32 dB power gain between 2.4-2.5GHz, at a low quiescent current of 65mA.
For 19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low E... |
| Description |
InGaP HBT 2.4 2.5 GHz Power Amplifier
InGaP HBT 2.4-2.5 GHz power amplifier.
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
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| File Size |
173.40K /
6 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
LX5512E-LQ LX5512E
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| OCR Text |
...ar Transistor (HBT) IC process (mocvd). It operates at a single low voltage supply of 3.3V with 34 dB power gain between 2.4-2.5GHz, at a low quiescent current of 50 mA.
For 19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low ... |
| Description |
InGaP HBT 2.4 - 2.5 GHz Power Amplifier
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| File Size |
218.63K /
10 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
ML6XX25 ML60125R ML601J25
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| OCR Text |
...0mW. ML6XX25 is produced by the mocvd crystal growth method which is excellent in mass production and characteristics uniformity . This is a high -performance , highly reliable , and long life semiconductor laser.
O High volume productio... |
| Description |
FOR OPTICAL INFORMATION SYSTEMS
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| File Size |
52.69K /
2 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
ML6XX28 ML60128R ML601J28
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| OCR Text |
... 60mW. ML6XX28 is produced by a mocvd crystal growth method which is excellent in mass production and characteristics uniformity. This is a high-performance, highly reliable, and low-operation-current semiconductor laser.
ABSOLUTE MAXIMU... |
| Description |
FOR OPTICAL INFORMATION SYSTEMS
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| File Size |
20.54K /
2 Page |
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it Online |
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Price and Availability
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