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Intersil, Corp. INTERSIL[Intersil Corporation]
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Part No. |
FSL23A4R FSL23A4D FN4474 FSL23A4R4 FSL23A4D1 FSL23A4D3 FSL23A4R1 FSL23A4R3
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OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
Description |
5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 5 A, 250 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF RECTIFIER BRIDGE 6A 100V 125A-ifsm 1.1V-vf 10uA-ir PBPC3 200/BOX 5 A, 250 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF RECTIFIER BRIDGE 3A 600V 50A-ifsm 1.2V-vf 10uA-ir PBPC3 200/BOX RECTIFIER BRIDGE 3A 1000V 50A-ifsm 1.2V-vf 10uA-ir PBPC3 200/BOX From old datasheet system 5A/ 250V/ 0.480 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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File Size |
46.28K /
8 Page |
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INTERSIL[Intersil Corporation]
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Part No. |
JANSR2N7401 FN4571
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OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 3... |
Description |
6A/ 250V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET From old datasheet system
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File Size |
54.70K /
8 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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Part No. |
JANSR2N7403 FN4486
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OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 3... |
Description |
22 A, 100 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA From old datasheet system 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET 22A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFET
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File Size |
44.37K /
8 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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Part No. |
FSF9150R FSF9150D FN4089 FSF9150R4 FSF9150D1 FSF9150D3 FSF9150R1 FSF9150R3
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OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
Description |
22A/ -100V/ 0.140 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs From old datasheet system
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File Size |
44.38K /
8 Page |
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it Online |
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INTERSIL[Intersil Corporation] Intersil, Corp.
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Part No. |
FSL234R FSL234D FN4030 FSL234R4 FSL234D1 FSL234D3 FSL234R1 FSL234R3
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OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
Description |
4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 4A/ 250V/ 0.610 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs From old datasheet system 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 4 A, 250 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
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File Size |
45.36K /
8 Page |
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INTERSIL[Intersil Corporation]
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Part No. |
FSYA9150R FSYA9150D FN4582 FSYA9150R4 FSYA9150D1 FSYA9150D3 FSYA9150R1 FSYA9150R3
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OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
Description |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs From old datasheet system
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File Size |
55.68K /
8 Page |
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it Online |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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Part No. |
FSYA250R FSYA250D FSYA250R1 FN4313 FSYA250R4 FSYA250D1 FSYA250D3 FSYA250R3
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OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37... |
Description |
27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 27 A, 200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system 27A/ 200V/ 0.100 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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File Size |
45.54K /
8 Page |
View
it Online |
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INTERSIL[Intersil Corporation] Intersil, Corp.
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Part No. |
FSYA450D FSYA450D1 FSYA450D3 FSYA450R4 FSYA450R1 FSYA450R3
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OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves... |
Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 11 A, 500 V, 0.53 ohm, N-CHANNEL, Si, POWER, MOSFET
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File Size |
55.83K /
8 Page |
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it Online |
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Intersil, Corp. INTERSIL[Intersil Corporation]
|
Part No. |
JANSR2N7410 FN4500
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OCR Text |
...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 3... |
Description |
3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF From old datasheet system 3.5A 100V 0.600 Ohm Rad Hard N-Channel Power MOSFET 3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
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File Size |
44.85K /
8 Page |
View
it Online |
Download Datasheet
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Price and Availability
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