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For naval Found Datasheets File :: 202    Search Time::3.688ms    
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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FSL23A4R FSL23A4D FN4474 FSL23A4R4 FSL23A4D1 FSL23A4D3 FSL23A4R1 FSL23A4R3
OCR Text ...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37...
Description    5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 5 A, 250 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
RECTIFIER BRIDGE 6A 100V 125A-ifsm 1.1V-vf 10uA-ir PBPC3 200/BOX 5 A, 250 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
RECTIFIER BRIDGE 3A 600V 50A-ifsm 1.2V-vf 10uA-ir PBPC3 200/BOX
RECTIFIER BRIDGE 3A 1000V 50A-ifsm 1.2V-vf 10uA-ir PBPC3 200/BOX
From old datasheet system
5A/ 250V/ 0.480 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

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    INTERSIL[Intersil Corporation]
Part No. JANSR2N7401 FN4571
OCR Text ...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 3...
Description 6A/ 250V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET
From old datasheet system

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    INTERSIL[Intersil Corporation]
Part No. JANSR2N7403 FN4486
OCR Text ...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 3...
Description 22 A, 100 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
From old datasheet system
22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET
22A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFET

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    INTERSIL[Intersil Corporation]
Part No. FSF9150R FSF9150D FN4089 FSF9150R4 FSF9150D1 FSF9150D3 FSF9150R1 FSF9150R3
OCR Text ...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37...
Description 22A/ -100V/ 0.140 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
From old datasheet system

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    INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSL234R FSL234D FN4030 FSL234R4 FSL234D1 FSL234D3 FSL234R1 FSL234R3
OCR Text ...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37...
Description    4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
4A/ 250V/ 0.610 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
From old datasheet system
4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 4 A, 250 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

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    INTERSIL[Intersil Corporation]
Part No. FSYA9150R FSYA9150D FN4582 FSYA9150R4 FSYA9150D1 FSYA9150D3 FSYA9150R1 FSYA9150R3
OCR Text ...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37...
Description Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
From old datasheet system

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    FSYA250R FSYA250D FSYA250R1 FN4313 FSYA250R4 FSYA250D1 FSYA250D3 FSYA250R3

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FSYA250R FSYA250D FSYA250R1 FN4313 FSYA250R4 FSYA250D1 FSYA250D3 FSYA250R3
OCR Text ...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37...
Description 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 27 A, 200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
27A/ 200V/ 0.100 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs

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    MI-253-MW MI-253-MV MI-253-MY MI-253-MX MI-25Y-MW MI-26Z-MV MI-26Z-IY MI-26Z-IX MI-25O-IW MI-251-IV MI-251-IW MI-251-IX

Vishay Semiconductors
Vicor, Corp.
DC/DC变换
ETC[ETC]
VICOR[Vicor Corporation]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
http://
Part No. MI-253-MW MI-253-MV MI-253-MY MI-253-MX MI-25Y-MW MI-26Z-MV MI-26Z-IY MI-26Z-IX MI-25O-IW MI-251-IV MI-251-IW MI-251-IX MI-251-IY MI-221-IV MI-221-IW MI-221-IX MI-221-IY MI-221-MV MI-221-MW MI-221-MX MI-221-MY MI-222-IV MI-222-IW MI-222-IX MI-222-IY MI-222-MV MI-222-MW MI-222-MX MI-263-MV MI-263-MW MI-263-MX MI-263-MY MI-27Z-MY MI-200 MI-222-MY MI-223-IV MI-223-IW MI-223-IX MI-223-IY MI-223-MV MI-223-MW MI-223-MX MI-223-MY MI-224-IV MI-224-IW MI-224-IX MI-224-IY MI-224-MV MI-224-MW MI-224-MX MI-224-MY MI-22J-IV MI-22J-IW MI-22J-IX MI-22J-IY MI-22J-MV MI-22J-MW MI-22J-MX MI-22J-MY MI-22K-IV MI-22K-IW MI-22K-IX MI-22K-IY MI-22K-MV MI-22K-MW MI-22K-MX MI-22K-MY MI-22L-IV MI-22L-IW MI-22L-IX MI-22L-IY MI-22L-MV MI-22L-MW MI-22L-MX MI-22L-MY MI-22M-IV MI-22M-IW MI-22M-IX MI-22M-IY MI-22M-MV MI-22M-MW MI-22M-MX MI-22M-MY MI-22N-IV MI-22N-IW MI-22N-IX MI-22N-IY MI-22N-MV MI-22N-MW MI-22N-MX MI-22N-MY MI-22O-IV MI-22O-IW MI-22O-IX MI-22O-IY MI-22O-MV MI-22O-MW MI-22O-MX MI-22O-MY MI-22P-IV MI-22P-IW MI-22P-IX MI-22P-IY MI-22P-MV MI-22P-MW MI-22P-MX MI-22P-MY MI-22R-IV MI-22R-IW MI-22R-IX MI-22R-IY MI-22R-MV MI-22R-MW MI-22R-MX MI-22R-MY MI-22T-IV MI-22T-IW MI-22T-IX MI-22T-IY MI-22T-MV MI-
OCR Text ...7F) 25C Ground Benign: G.B. 50C naval Sheltered: N.S. 65C Airborne Inhabited Cargo: A.I.C. Thermal Characteristics Efficiency Baseplate to sink Thermal shutdown 90 Baseplate operating temperature Storage temperature Mechanical Specification...
Description MICRO 25 SKT 24" RBW float
OSC 5V SMT 7X5 CMOS PROGRM 军事的DC - DC转换000W
Micro 21 Pin Sod Jackp 军事的DC - DC转换000W
Military DC-DC Converters 50 to 100W 军事DC - DC转换000W
Military DC-DC Converters 50 to 100W 军事的DC - DC转换5000W
Multifunction Telecom switch combines two 350V Form A relays and one optocoupler 军事的DC - DC转换000W
Single Pole Normally Open: 1-Form-A: Voltage Controlled 军事的DC - DC转换000W
XTAL MTL SMT HC49/USM 军事的DC - DC转换000W
CRYSTAL 8.000MHZ 18PF FUND SMD 军事的DC - DC转换000W
RELAY OPTOMOS 120MA 4PIN SOP 军事的DC - DC转换000W
CRYSTAL, 8.00 MHZ, 18 PFHCM49 军事的DC - DC转换000W
Dual Pole Normally Open: 2-Form-A 军事的DC - DC转换000W
Dual Pole Combination: Form-A & B 军事的DC - DC转换000W
Dual Pole Combination: Form-A & B with Current Limiting 军事的DC - DC转换000W
Inductor; Inductor Type:Power; Inductance:120nH; Series:CTX; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No; Reel Quantity:6000 RoHS Compliant: Yes 军事的DC - DC转换000W
Replaced by PTH05060W : 军事的DC - DC转换000W
LED T1-3/4 ULTRABRT YEL W/STDOFF 军事的DC - DC转换000W
LASER MOD 635NM 2.5MW VAR FOCUS 军事的DC - DC转换000W
LED ULTRA-BRIGHT RED 军事的DC - DC转换000W
LIGHT PIPE CLEAR 1 POS 军事的DC - DC转换000W
Military DC-DC Converters 50 to 100W 军事的DC - DC转换000W
LIGHT EMITTING DIODE, GREEN
400V, 150mA, 22 1-Form-A relay with an optocoupler
RELAY OPTOMOS 100MA SP-NO 6-SMD
Dual Pole Normally Closed: 2-Form-B
400V, 150mA, 22 1-Form-A current limited relay with an optocoupler
3V/5V General Purpose Call Progress Tone Detector
Dial Pulse Counter and Hook Status Monitor
Balanced Dual Coil Telephone Line Current Sensing Relay
Dual Pole Combination: Form-A & B
LED RED T1 MODULAR DIFFUSED
LED YELLOW T1 MODULAR DIFFUSED
**** 5.0V OSCILLATORS ****
OSC 3.3V SMT 7X5 CMOS PRGM
RELAY OPTOMOS 100MA DP 8-SMD
RELAY OPTOMOS 100MA DP-NO 8-SMD
RELAY OPTOMOS 120MA DP-NC 8-SMD
RELAY OPTOMOS 170MA DP 8-SMD
Inductor; Inductor Type:Power; Inductance:8.2uH; Series:CTX; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No; Reel Quantity:6000 RoHS Compliant: Yes
D-Subminiature Connector; Gender:Female; No. of Contacts:25; Contact Termination:Solder; D Sub Shell Size:DB25; Body Material:Thermoplastic; Leaded Process Compatible:No; Mounting Type:Float Mount; Peak Reflow Compatible (260 C):No RoHS Compliant: No
D-Subminiature Connector; Gender:Female; No. of Contacts:15; Contact Termination:Wire; D Sub Shell Size:DB15; Body Material:Thermoplastic; Leaded Process Compatible:No; Mounting Type:Jackscrew; Peak Reflow Compatible (260 C):No RoHS Compliant: No

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    FSYA450D FSYA450D1 FSYA450D3 FSYA450R4 FSYA450R1 FSYA450R3

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSYA450D FSYA450D1 FSYA450D3 FSYA450R4 FSYA450R1 FSYA450R3
OCR Text ...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). Typical Performance Curves...
Description Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 11 A, 500 V, 0.53 ohm, N-CHANNEL, Si, POWER, MOSFET

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. JANSR2N7410 FN4500
OCR Text ...ven National Labs; sponsored by naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 3...
Description 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3.5A 100V 0.600 Ohm Rad Hard N-Channel Power MOSFET
3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET

File Size 44.85K  /  8 Page

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For naval Found Datasheets File :: 202    Search Time::3.688ms    
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