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SamHop Microelectronics
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Part No. |
SP3900
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OCR Text |
... 17 4.6 t d(on) 6 ns t r ns t d(off) ns t f ns v ds =10v,v gs =0v switching characteristics v dd =15v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i... |
Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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File Size |
108.83K /
7 Page |
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it Online |
Download Datasheet |
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New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conduct...
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Part No. |
BUZ11
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OCR Text |
...5 c unless otherwise specified) off symbol v(br)dss loss igss parameter drain-source breakdown voltage zero gate voltage drain current (vgs ...time rise time turn-off delay time fall time test conditions vdd = 30 v id = 18 a rgs = 50 q. vgs = ... |
Description |
N - CHANNEL 50V - 0.03Q - 33A TO-220 STripFET MOSFET N - CHANNEL 50V - 0.03Q - 33A TO-220 STripFET?MOSFET
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File Size |
127.27K /
3 Page |
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it Online |
Download Datasheet |
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FUJI ELECTRIC CO LTD
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Part No. |
2SK3687-01MR
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OCR Text |
...iss c oss c rss td (on) t r td (off) t f q g q gs q gd i av v sd t rr q rr item drain-source breakdown voltaget gate threshold voltage g...time t on turn-off time t off total gate charge gate-source charge gate-drain charge avalanche ca... |
Description |
16 A, 600 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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File Size |
101.78K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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