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2022D 01547 2TRPB 5HN02N TP60N 08CBT6B AON6516 04020
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For r w Found Datasheets File :: 228160    Search Time::6.328ms    
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    2SD1024

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1024
OCR Text ...me ts I =B2 8mA = Max 5 Es B1 I r= 3 L Fall Time tf V = 4V Max 3 BB2 2SD1024 hFE - I C 10000 50C 100C Tc = 150C DC Curren...w] 0.1 10-2 10-1 100 101 Time t [s, ms] 2SD1024 12 10 10ms DC Forward Bias ...
Description Darlington Transistor(8A NPN)r>
File Size 275.54K  /  8 Page

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    2SD1025

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1025
OCR Text ...e ts I =B2 10mA = Max 8 Es B1 I r= 5 L Fall Time tf V = 4V Max 5 BB2 2SD1025 hFE - I C VCE = 3V Pulse width = 300s 10000 50C 100C...w] 0.1 10-2 10-1 100 Time t [s, ms] 2SD1025 12 10 10ms DC 1ms Forward Bias SOA...
Description Darlington Transistor(8A NPN)r>
File Size 343.47K  /  8 Page

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    2SD1026

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1026
OCR Text ...= 13.3mA IB2 = 13.3mA VBB2 = 4V r L = 5 0 50 100 150 Case Temperature Tc [C] 2SD1026 Transient Thermal Impedance 1 0.01~10 [s] Transient Thermal Impedance jc(t) [C/w] 0.1 0.01~10 [ms] 10-2 10-1 100 101 Time...
Description Darlington Transistor(15A NPN)r>
File Size 405.96K  /  8 Page

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    2SD1027

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1027
OCR Text ...= 0.033A IB2 = 0.033A VBB2 = 4V r L = 5 0.1 0 50 100 150 Case Temperature Tc [C] 2SD1027 Transient Thermal Impedance 1 0.01~10 [s] Transient Thermal Impedance jc(t) [C/w] 0.1 0.01~10 [ms] 10-2 10-1 100 101 ...
Description Darlington Transistor(15A NPN)r>
File Size 456.51K  /  10 Page

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    2SD1051

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PANASONIC[Panasonic Semiconductor]
Part No. 2SD1051
OCR Text ...cuit board. 0.4 1.00.1 r 0. 4.50.1 7 Unit A A A V V 50 40 80 120 220 1 1.5 150 45 *2 VCE(sat) VBE(sat) fT Cob ...w) 1.0 Collector current IC (A) 3.0 2.5 2.0 1.5 35mA 30mA 25mA 20mA 15mA 10mA 0.8 ...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification)r>
File Size 39.28K  /  2 Page

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    2SD1119

Fuji Electric
Panasonic Semiconductor
Part No. 2SD1119
OCR Text ...ing Symbol Q 230 ~ 380 TQ r 340 ~ 600 Tr 1 Transistor PC -- Ta 1.2 2.4 Printed circut board: Copper foil area of 1cm2 or more,...w) 1.0 Collector current IC (A) 0.8 0.6 Collector current IC (A) 3 0.4 2 ...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification0r>
File Size 37.58K  /  2 Page

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    2SD1163 2SD1163A

HITACHI[Hitachi Semiconductor]
Part No. 2SD1163 2SD1163A
OCR Text ... Safe Operation (40 V, 20 A) r Fo e tur Pic 40 20 (120 V, 0.9 A) 30 100 300 1,000 Collector to emitter voltage VCE (V) Typical Output Characteristics 1.0 12 10 TC = 25C DC current transfer ratio hFE 8 6 4 2 mA IB = 0 0 2 4...
Description Silicon NPN Triple Diffusedr>
File Size 31.45K  /  6 Page

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    2SD1198 2SD1198A

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1198 2SD1198A
OCR Text .... 1.5 r0.9 r0.9 1.00.1 r 0. 4.50.1 7 Unit nA nA V 30 60 25 50 5 4000 40000 1.8 2.2 150 *2 V V Emitter to base...w) 1.0 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7m...
Description Silicon NPN epitaxial planer type darlington 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TrANSISTOrr>
File Size 50.59K  /  2 Page

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    2SD1211

Panasonic Semiconductor
Part No. 2SD1211
OCR Text ... FE1 rank classification r 130 ~ 220 S 185 ~ 330 rank hFE1 3.2 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC-51 TO-92L...w) 1.0 Collector current IC (mA) 160 IB=1.0mA 0.9mA 0.8 120 0.8mA 0.7mA 0.6mA ...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)r>
File Size 36.83K  /  2 Page

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    2SD2439

SANKEN[Sanken electric]
Part No. 2SD2439
OCR Text ...Fr equ ency f T( MH Z) Collecto r Cur ren t I C( A) 10 5 DC 10 0m Ma xim um Powe r Dissipation P C( w) s s 60 60 Typ 1 0.5 without Heatsink Natural Cooling 0.1 40 40 20 20 without Heatsink 5 10 50 10...
Description Silicon NPN Triple Diffused Planar Transistor(Audio, Series regulator and General Purpose)r>
File Size 24.85K  /  1 Page

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