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  R-78A1.8-1.0SMD Datasheet PDF File

For R-78A1.8-1.0SMD Found Datasheets File :: 125+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |   

    IRFN250SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRFN250SMD
Description N-CHANNEL POWER MOSFET

File Size 23.35K  /  2 Page

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Texas Instruments

Part No. LM136AH-5.0-SMD
Description 5.0V Reference Diode 3-TO -55 to 125
Tech specs    

Official Product Page

HUA FENG CIRCUIT





    HTS2010SMD

Humirel
Part No. HTS2010SMD
Description TEMPERATURE AND RELATIVE HUMIDITY SENSOR 温度和相对湿度传感器

File Size 569.34K  /  4 Page

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    BUX50SMD05

Seme LAB
Part No. BUX50SMD05
Description Bipolar NPN Device in a Hermetically sealed

File Size 10.38K  /  1 Page

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    SemeLAB
SEME-LAB[Seme LAB]
Part No. IRFN340SMD
Description N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω))

File Size 23.56K  /  2 Page

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    IRFN140SMD

TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
Part No. IRFN140SMD
Description ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET(减振钢板基本:100V的,身份证(续)3.9A,的Rds(on):0.077Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本100V的,身份证(续)3.9A时,RDS(对):0.077Ω))

File Size 22.23K  /  2 Page

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    IRFN130SMD

TT electronics Semelab Limited
Seme LAB
Part No. IRFN130SMD
Description N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 21.04K  /  2 Page

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    BDS20 BDS20SMD BDS21 BDS21SMD

SemeLAB
Seme LAB
Part No. BDS20 BDS20SMD BDS21 BDS21SMD
Description SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES

File Size 19.34K  /  2 Page

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    BYV29-300M04 BYV29-300M BYV29-300SMD BYV29-400M BYV29-400SMD BYV29-500M BYV29-500SMD BYV29-500MR1

SEMELAB LTD
Seme LAB
Part No. BYV29-300M04 BYV29-300M BYV29-300SMD BYV29-400M BYV29-400SMD BYV29-500M BYV29-500SMD BYV29-500MR1
Description 8 A, 500 V, SILICON, RECTIFIER DIODE, TO-257AB
HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER FOR HI-REL APPLICATIONS

File Size 21.86K  /  2 Page

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    Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. Q67078-A4400-A2 BUP200 BUP200SMD
Description IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)

File Size 300.53K  /  7 Page

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    BYV29300M BYV29-300M BYV29-400M BYV29-500M BYV29-300SMD BYV29-500SMD

SEME-LAB[Seme LAB]
Infineon Technologies AG
NXP Semiconductors N.V.
TT electronics Semelab, Ltd.
Part No. BYV29300M BYV29-300M BYV29-400M BYV29-500M BYV29-300SMD BYV29-500SMD
Description 300V, 9A Fast Recovery Rectifier diode
3 A low drop positive voltage regulator adjustable and fixed
1.5 A low drop positive voltage regulator adjustable and fixed 快恢复整
Hermetically Sealed Fast Recovery Silicon Rectifier For HI-REL Application(气密封装的快速恢复硅整流HI-REL应用)) 密封快恢复硅整流对于高可靠性的应用(气密封装的快速恢复硅整流器(高可靠性应用)
HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS 8 A, 500 V, SILICON, RECTIFIER DIODE, TO-257AB

File Size 21.74K  /  2 Page

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For R-78A1.8-1.0SMD Found Datasheets File :: 125+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |   

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