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  rds Datasheet PDF File

For rds Found Datasheets File :: 35069    Search Time::3.796ms    
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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ... 8.1A and 6.5A, 275V and 250V * rds(ON) = 0.45 and 0.68 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * 275V, 250V DC Rated - ...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    Dialog Semiconductor
Part No. SLG7NT402VTR
OCR Text ...th external capacitor ? 7.8 m rds on while supporting 4 a ? discharges load when off ? two over current protection modes ? short circuit current limit ? active current limit ? over temperature protection ? pb-free / halogen-free / rohs c...
Description Ultra-small 7.8 mΩ, 4 A Integrated Power Switch with Discharge

File Size 123.38K  /  11 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ... * 14A and 13A, 275V and 250V * rds(ON) = 0.28 and 0.34 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * 275V, 250V DC Rated - ...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    LBSS138DW1T1G S-LBSS138DW1T1G LBSS138DW1T3G

Leshan Radio Company
Part No. LBSS138DW1T1G S-LBSS138DW1T1G LBSS138DW1T3G
OCR Text ...ta = C40c to +85c) vgs(th) idss rds(on) - 0.5 - vbrdss igssf turn-on delay time (vdd = 30 vdc , id =200 madc) turn-off delay time td(off) td(on) ns - - 20 - - 20 leshan radio company, ltd. rev.b mar 2016 2/6 lbss138dw1t1g, s-lbss138dw1t...
Description Power MOSFET200 mAmps, 50 Volts N?Channel SC-88

File Size 452.61K  /  6 Page

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    IRF2804S-7P

IRF[International Rectifier]
Part No. IRF2804S-7P
OCR Text ... to Tjmax VDSS = 40V G S rds(on) = 1.6m ID = 160A Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per sil...
Description AUTOMOTIVE MOSFET

File Size 260.32K  /  10 Page

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    IRF2804 IRF2804L IRF2804S

IRF[International Rectifier]
Part No. IRF2804 IRF2804L IRF2804S
OCR Text ...lowed up to Tjmax VDSS = 40V rds(on) = 2.0m G S Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silico...
Description 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 273.77K  /  12 Page

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    IRF2805L IRF2805S

IRF[International Rectifier]
Part No. IRF2805L IRF2805S
OCR Text ...res VDSS = 55V G S rds(on) = 4.7m ID = 135AV Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per si...
Description 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 221.43K  /  11 Page

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    IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text ... IRF2807S IRF2807L VDSS = 75V rds(on) = 13m G S ID = 82A Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, ...
Description HEXFET Power MOSFET HEXFET功率MOSFET
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 122.50K  /  10 Page

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    IRF2807

International Rectifier
Part No. IRF2807
OCR Text ...lanche Rated D VDSS = 75V rds(on) = 13m G S ID = 82A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T...
Description Power MOSFET(Vdss=75V, Id=82A?)
Power MOSFET(Vdss=75V, Id=82A)

File Size 149.88K  /  8 Page

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    IRF2907Z IRF2907ZL IRF2907ZS IRF2907S IRF2B907Z IRF2B907ZL IRF2B907ZS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2907Z IRF2907ZL IRF2907ZS IRF2907S IRF2B907Z IRF2B907ZL IRF2B907ZS
OCR Text ...lowed up to Tjmax VDSS = 75V rds(on) = 4.5m G S Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silico...
Description AUTOMOTIVE MOSFET 汽车MOSFET
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 359.66K  /  12 Page

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