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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC M368L6523BUN-LB3 M381L6523BUM-LCC M381L6523BTM-LB3 M381L6523BTM-LCC M368L2923BTN-CB3 M381L2923BTM-LB3 M368L3324BTM-CB3 M368L2923BTN-LB3 M381L6523BTM-CB3 M368L3324BUM-CB3 M368L3324BTM-LB3 M368L6523BTN-CB3 M381L2923BTM-CB3 M381L2923BUM-CB3 M381L2923BUM-LB3 M381L6523BUM-CB3 M368L2923BUM-CCC M368L2923BUM-LCC M368L2923BTM-CCC M381L2923BTM-LCC M368L2923BTM-LCC M368L2923BUN-CB3 M368L6523BUN-CB3 M368L6523BUM-CCC M381L2923BUM-CCC M381L6523BTM-CCC
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OCR Text |
sdram 256mb, 512mb, 1gb unbuffered dimm rev. 1.1 june 2005 information in this document is provided in relation to samsung products, and is subject to change without notice. nothing in this document shall be construed as granting any lic... |
Description |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL Single-Supply Voltage Translator 6-SOT-23 -40 to 85
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File Size |
454.45K /
25 Page |
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