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Ametherm, Inc.
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Part No. |
SL1222101-A SL1222101-B
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Description |
trans,WALL,24VDC/400mA,F2, 2.1mm x 5.5mm,UL 50/cs 电路保护热敏电阻 trans,WALL,24VDC/500mA,F1 2.1mmX5.5mm,UL trans,WALL,18VDC/1A,F2,2.5X5.5 ,2 PRNG AC,LIN NON-REG
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File Size |
24.75K /
1 Page |
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Astrodyne, Inc.
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Part No. |
PWB PWB-5000 PWB-5001 PWB-5005
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Description |
trans,WALL,9VDC/300mA,F1, 2.5X5.5mm,UL/CUL trans,WALL,9VDC/350mA,F2 2.1mm x 5.5 mm,UL/CUL trans,WALL,12VDC/200MA,F2 2.1mm X 5.5mm,RT. ANGLE trans,WALL,12VDC/200mA,LT GRAY F2,2.5mmX5.5mm,RANGL,UL/CSA 1-OUTPUT 5 W AC-DC REG PWR SUPPLY MODULE
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File Size |
484.60K /
3 Page |
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Astrodyne, Inc.
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Part No. |
PSP-500 PSP-500-5 PSP-500-15 PSP-500-24 PSP-500-48 PSP-500-27 PSP-500-12 ASTRODYNEINC.-PSP-500-48
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Description |
transDUCER,MAG,1.5Vpp @ 10mA 2048HZ @ 80db,50ohm,2 PINS trans,WALL,6VDC/500mA,M2 3.5mm,UL/CSA 100/cs trans,WALL,5VDC/225mA,F2, 2.5mm x 5.5mm,UL/CSA 40/cs PFC和并行与500W的功 trans,WALL,REG,6VDC/200MA, 2.1mmX5.5mm,F2,UL/CUL PFC和并行与500W的功 trans,WALL,6VDC/500mA,F1, 2.1mm X 5.5mm,UL,CULC-NEG PFC和并行与500W的功 trans,WALL,6VDC/500mA,F2 2.1mm x 5.5mm,UL/CSA 50/cs PFC和并行与500W的功 CONN,DSUB,.590"RT,25P-M, LONG,METAL HOUSING W/PC TABS PFC和并行与500W的功
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File Size |
434.06K /
3 Page |
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it Online |
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Astrodyne, Inc.
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Part No. |
PV15-24S PV15-15S PV15-5S PV15-48S
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Description |
trans,WALL,9VDC/200mA,F1 2.1mm X 55mm,UL/CSA(CTR-NEG) trans,WALL,REG,6VDC/1A 2.1mmX5.5mm,CTR POS,UL/CSA trans,WALL,9VDC/200mA, M2,3.5mm,UL/CSA trans,WALL,9VDC/300mA,F2, 2.5mmX5.5mm,UL/ULC trans,WALL,9VDC/300mA,F2 2.1mm X 5.5mm,UL/CSA
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File Size |
446.95K /
3 Page |
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it Online |
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Infineon
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Part No. |
SDP10S30 SDB10S30SMD SDT10S30
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Description |
silicon carbide Schottky Diodes - 10A diode in TO220-3 package silicon carbide Schottky Diodes - 10A diode in TO263 package silicon carbide Schottky Diodes - 10A diode in TO220-2 package
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File Size |
575.47K /
9 Page |
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it Online |
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CREE POWER
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Part No. |
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
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Description |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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File Size |
273.34K /
17 Page |
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it Online |
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Price and Availability
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