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For vgss Found Datasheets File :: 9579 Search Time::0.953ms
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				Mitsubishi Electric Semiconductor Mitsubishi Electric Sem...
Part No.	FM400TU-2A09
OCR Text	...erwise specified.) Symbol VDSS vgss ID(rms) IDM IDA IS(rms)1 ISM1 PD4 PD4 Tch Tstg Viso -- -- Item Drain-source voltage Gate-source voltage Drain current Avalanche current Source current Maximum power dissipation Channel temperature St...
Description	MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
File Size	114.00K / 5 Page	View it Online	Download Datasheet

				Rohm
Part No.	RSD200N10
OCR Text	... area). 4) Gate-source voltage (vgss) guaranteed to be 30V. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching Dimensions (Unit : mm) CPT3 (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Source) Packaging s...
Description	4V Drive Nch MOSFET
File Size	282.06K / 6 Page	View it Online	Download Datasheet

				Stanson Technology
Part No.	STC4516 STC4516S8RG STC4516S8TG
OCR Text	...5 TA=70 TA=25 TA=70 Symbol VDSS vgss ID IDM IS PD TJ TSTG RJA Typical -30 +/-20 -7.2 -5.6 -20 -2.3 2.8 1.8 -55/150 -55/150 80 Unit V V A A A W /W N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pul...
Description	Complementary Dual Enhancement Mode MOSFET
File Size	913.93K / 9 Page	View it Online	Download Datasheet

				Guangdong Kexin Industrial Co.,Ltd
Part No.	2SJ528S
OCR Text	...10 s, duty cycle 1% Symbol VDSS vgss ID ID PD Tch Tstg Rating -60 20 -7 -28 20 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Gate to source breakdown voltage Drain cut-off ...
Description	Hight Speed Power Switching
File Size	41.54K / 1 Page	View it Online	Download Datasheet

				Guangdong Kexin Industrial Co.,Ltd
Part No.	2SJ527S
OCR Text	...10 s, duty cycle 1% Symbol VDSS vgss ID ID PD Tch Tstg Rating -60 20 -5 -20 20 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Gate to source breakdown voltage Drain cut-off ...
Description	Hight Speed Power Switching
File Size	41.41K / 1 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	FM200TU-2A09
OCR Text	...erwise specified.) Symbol VDSS vgss ID(rms) IDM IDA IS(rms)1 ISM1 PD4 PD4 Tch Tstg Viso -- -- Item Drain-source voltage Gate-source voltage Drain current Avalanche current Source current Maximum power dissipation Channel temperature St...
Description	MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
File Size	114.22K / 5 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	HAF2027 HAF2027-90STR-E HAF2027-90STL-E HAF2027L HAF2027S
OCR Text	.... Value at Tc = 25C Symbol VDSS vgss vgss ID ID (pulse) Note1 IDR PchNote2 Tch Tstg Ratings 60 16 -2.5 50 100 50 100 150 -55 to +150 Unit V V V A A A W C C Typical Operation Characteristics (Ta=25C) Item Input voltage Input current (Ga...
Description	Silicon N Channel Power MOSFET Power Switching
File Size	113.81K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDMC6675BZ
OCR Text	...f 8 kV typical(note 3) Extended vgss range (-25 V) for battery applications High performance trench technology for extremely low rDS(on) High power and current handling capability Termination is Lead-free and RoHS Compliant June 2009 ...
Description	P-Channel Power Trench? MOSFET -30 V, -20 A, 14.4 mΩ P-Channel Power Trench垄莽 MOSFET -30 V, -20 A, 14.4 m楼?
File Size	264.64K / 7 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	HN1L02FU
OCR Text	...oltage Drain current Symbol VDS vgss ID Rating 20 10 50 Unit V V mA Q2 Maximum Ratings (Ta = 25C) Characteristic Drain-Source voltage Gate-Source voltage Drain current Symbol VDS vgss ID Rating -20 -7 -50 Unit V V mA JEDEC EIAJ TOSH...
Description	Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications
File Size	251.50K / 6 Page	View it Online	Download Datasheet

				NEC
Part No.	NE55410GR NE55410GR-T3-AZ
OCR Text	...(Q2) IDSS (Q2) Vth (Q2) gm (Q2) vgss = 5V VDSS = 65 V VDS = 10 V, IDS = 1 mA VDS = 28 V, IDS = 100 mA - - 2.0 - 65 - - 2.6 0.45 75 1 1 3.2 - - IGSS (Q1) IDSS (Q1) Vth (Q1) gm (Q1) vgss = 5V VDSS = 65 V VDS = 10 V, IDS = 1 mA VDS = 28 V, IDS...
Description	N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
File Size	177.04K / 13 Page	View it Online	Download Datasheet

For vgss Found Datasheets File :: 9579 Search Time::0.953ms
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