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  300-400v Datasheet PDF File

For 300-400v Found Datasheets File :: 7377    Search Time::1.61ms    
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    IDP15E60 IDP15E6009

Infineon Technologies AG
Part No. IDP15E60 IDP15E6009
OCR Text ...: v r = 400v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 0 50 100 150 200 250 300 350 400 ns 500 t rr 30a 15a 7.5a 6 typ. reverse recovery charge q rr = f (d i f /d t ) parameter: v r = 400v, t j = 125 c 200 300 400 ...
Description Fast EmCon Diode

File Size 265.24K  /  8 Page

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    AOB10B60D

Alpha & Omega Semiconductors
Part No. AOB10B60D
OCR Text ... c =25c thermal characteristics 300 -55 to 150 163 40 c/w 65 82 c 40 aob10b60d pulsed collector current, limited by t jmax gate-emitter volt...400v, r g =30 w total gate charge gate resistance v ge =0v, v ce =0v, f=1mhz turn-on rise time turn...
Description 600V, 10A Alpha IGBT with Diode

File Size 585.22K  /  9 Page

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    AOB20S60 AOT20S60 AOTF20S60 AOB20S60L

Alpha & Omega Semiconductors
Part No. AOB20S60 AOT20S60 AOTF20S60 AOB20S60L
OCR Text ...0 20* 14* 3.3 100 20 -55 to 150 300 2.5 65 65 aotf20s60l aot20s60/aob20s60 20* 20 50 3.4 23 188 37.8 to-263 d 2 pak g d s g d s d s g ...400v reverse transfer capacitance bv dss v gs =10v, v ds =400v, i d =10a, r g =25 w turn-off fall ti...
Description 600V 20A a MOS TM Power Transistor
600V 20A a MOS Power Transistor

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    AOB25S65 AOT25S65 AOTF25S65 AOB25S65L

Alpha & Omega Semicondu...
Alpha & Omega Semiconductor...
Alpha & Omega Semiconductors
Part No. AOB25S65 AOT25S65 AOTF25S65 AOB25S65L
OCR Text ...1/8" from case for 5 seconds j 300 drain-source voltage c/w w/ o c c thermal characteristics 0.5 -- c/w maximum junction-to-case 0.35 a c ...400v reverse transfer capacitance bv dss v gs =10v, v ds =400v, i d =12.5a, r g =25 w turn-off fall ...
Description 650V 25A a MOS TM Power Transistor
650V 25A a MOS Power Transistor

File Size 309.01K  /  7 Page

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    AOB27S60 AOT27S60 AOTF27S60

Alpha & Omega Semiconductors
Part No. AOB27S60 AOT27S60 AOTF27S60
OCR Text ...aximum junction-to-ambient a,d 300 65 65 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds j c/w derate above 2...400v reverse transfer capacitance bv dss v gs =10v, v ds =400v, i d =13.5a, r g =25 w turn-off fall ...
Description 600V 27A a MOS Power Transistor

File Size 292.50K  /  6 Page

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    IRF[International Rectifier]
Part No. IRGB4045DPBF
OCR Text ...0 20 20 30 77 39 -55 to + 175 300 (0.063 in. (1.6mm) from case) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJ...400V VGE = 15V Conditions Ref.Fig 24 CT1 IC = 6.0A, VCC = 400V, VGE = 15V RG = 47, L=1mH, L...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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    STTH30R06 STTH30R06PI STTH30R06W STTH30R06P STTH30R06D

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STTH30R06 STTH30R06PI STTH30R06W STTH30R06P STTH30R06D
OCR Text ...100 150 200 dIF/dt(A/s) 250 300 350 400 450 500 Figure 5: Reverse recovery time versus dIF/dt (typical values) trr(ns) 200 VR=400V Tj=125C Figure 6: Reverse recovery charges versus dIF/dt (typical values) Qrr(C) 3.0 VR=400V ...
Description TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER 透平2超快高压整流

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    APT200GT60JRDL

Microsemi Corporation
Part No. APT200GT60JRDL
OCR Text ... IC, COLLECTOR CURRENT (A) 300 250 200 150 100 50 0 8V 5V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Outpu...400V RG = 2.2 L = 100H VGE =15V,TJ=125C VGE =15V,TJ=25C 80 60 40 VCE = 400V TJ = 25C, or 1...
Description Resonant Mode Combi IGBT

File Size 263.71K  /  9 Page

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    APT200GT60JRDQ4

Microsemi Corporation
Part No. APT200GT60JRDQ4
OCR Text ... COLLECTOR CURRENT (A) TJ= 150C 300 250 200 150 100 50 0 8V 5V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Outpu...400V RG = 2.2 L = 100H VGE =15V,TJ=125C APT200GT60JRDQ4 80 60 VGE =15V,TJ=25C 40 VCE...
Description Thunderbolt IGBT

File Size 231.51K  /  9 Page

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