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				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BLF2045
OCR Text	...ons (PCN/PCS) in the 1.8 to 2.2 GHz frequency range. 3 BLF2045 PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 1 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated ...
Description	UHF power LDMOS transistor
File Size	131.69K / 11 Page	View it Online	Download Datasheet

				Alpha Industries Inc ALPHA[Alpha Industries]
Part No.	DC16-73
OCR Text	... 1.3:1 1.3:1 16.6 1.3:1 Unit GHz dB dB Min. 1.71 Typ. .35 Max. 1.99 .45 1.3:1 1.3:1 15.8 1.3:1 Unit GHz dB dB 23 24 1.1:1 1.1:1 22 23 1.1:1 1.1:1 14.6 15.6 1.1:1 dB 13.8 14.8 1.1:1 dB Pin Out ...
Description	Directional Coupler
File Size	59.62K / 3 Page	View it Online	Download Datasheet

				HITTITE[Hittite Microwave Corporation]
Part No.	HMC318MS8G
OCR Text	GHz Features LNA with 18 dB Gain Control +3V Operation Low Noise Figure: 2.5 dB No External Components Ultra Small 8 Lead MSOP: 14.8mm2 x 1mm High 8 AMPLIFIERS - SMT Typical Applications The HMC318MS8G is ideal for: * UNII * Hiper...
Description	GaAs MMIC LOW NOISE AMPLIFIER with AGC 5.0 - 6.0 GHz GaAs MMIC LOW NOISE AMPLIFIER with AGC, 5.0 - 6.0 GHz
File Size	210.10K / 6 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGFC5216 C5216A
OCR Text	...cially designed for 37.0 ~ 40.0 GHz band Middle Power Amplifier (MPA) . BLOCK DIAGRAM Vg1 Vg2 Vg3 Vg4 OUT FEATURES RF frequency : 37.0 to 43.0 GHz Linear gain : 20dB (TYP.)@ 37 to 40 GHz 20 dB(TYP.) @ 40 to 43 GHz P1dB : ...
Description	Q-Band 4-Stage Driver Amplifier From old datasheet system
File Size	29.81K / 4 Page	View it Online	Download Datasheet

				Avago Technologies, Ltd. HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	MSA-9970
OCR Text	...Amplifiers * Usable Gain to 6.0 GHz * 16.0 dB Typical Open Loop Gain at 1.0 GHz * 14.5 dBm Typical P1 dB at 1.0 GHz * Hermetic Gold-ceramic Microstrip Package Description The MSA-9970 is a high performance silicon bipolar Monolithic Mic...
Description	Cascadable Silicon Bipolar MMIC Amplifier 级联硅双极MMIC放大
File Size	44.98K / 4 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	NE68139R-T1 NE68139-T1 NE68133-T1 NE68118-T1 NE68100 NE68119-T1 NE681 NE68130-T1 NE68133-T1B NE68135
OCR Text	GHz * LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz NE681 SERIES * HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz * LOW COST s ber m TE: art nu e not O . ar E N ing p ign t s EA S l o w hee ew de r PL ta s r n ol DESCRIPTI...
Description	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
File Size	215.81K / 20 Page	View it Online	Download Datasheet

				MACOM[Tyco Electronics]
Part No.	NJM12901 NJM12901D1 NJM12901E NJM12901M NJM12901V PH2729-25M
OCR Text	GHz, 100s PULSE, 10% DUTY OUTLINE DRAWING FEATURES NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold ...
Description	RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100ms PULSE, 10% DUTY PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100s PULSE, 10% DUTY RADAR PULSED POWER TRANSISTOR 25 WATTS 2.70-2.90 GHz 100ms PULSE 10% DUTY PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS / 2.70-2.90 GHz / 100s PULSE / 10% DUTY RADAR PULSED POWER TRANSISTOR 25 WATTS/ 2.70-2.90 GHz/ 100ms PULSE/ 10% DUTY PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100?? PULSE, 10% DUTY
File Size	97.49K / 2 Page	View it Online	Download Datasheet

				MA-Com MACOM[Tyco Electronics] Analog Devices, Inc.
Part No.	NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M NJM12904R NJM12904V PHA2731-190M
OCR Text	GHz, 200s Pulse, 10% Duty Features * * * * * * Input and Output matched to 50 RC bias circuit included Dual NPN Silicon class C power transistors Soft substrate r = 10.5 Hermetic Package Nickel plated copper flange Outline Drawing1 ...
Description	Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz / 200s Pulse / 10 Duty Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200s Pulse, 10 Duty Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200レs Pulse, 10 Duty 雷达脉冲功率Amplifier.190.7.3.1千兆赫，200レ拧脉冲10职务
File Size	52.66K / 2 Page	View it Online	Download Datasheet

				RFMD[RF Micro Devices]
Part No.	RF2045 RF2045PCBA
OCR Text	...0x10 4.6 5.0 65 9 Unit MHz GHz dB dB dB dB dB dB Condition T=25 C, ICC =65mA 4 GENERAL PURPOSE AMPLIFIERS Frequency Range 3dB Bandwidth Gain 11 Gain Flatness Noise Figure Input VSWR Output VSWR Output IP3 Output P1dB Reve...
Description	GENERAL PURPOSE AMPLIFIER
File Size	66.49K / 6 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers
Part No.	AP10E070039B
OCR Text	... -40.00db (f2) 1 center 1.57542 ghz span 400 mhz 20/20 cor ifbw 70 khz cg1 tr1 s21 > 1 1.5754200 ghz 15.028 db cg1 tr1 s21 2 1.6054200 ghz -20.790 db cg1 tr1 s21 3 1.5454200 ghz 5.4162 ...
Description	AP.10E - 1 Stage 15dB 39mm 0.81 with IPEX MHFI
File Size	722.95K / 12 Page	View it Online	Download Datasheet

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