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MM5451YN 74HC1G1 SNC88085 VS2005A OM6502ST 55C7V ITTK200A 0R12KE3
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  .230 Datasheet PDF File

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ...0 ns TJ = 25C, IF = 43A --- 220 230 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L =...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ...0 ns TJ = 25C, IF = 43A --- 220 230 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 43A, di/dt 210A/...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

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    IRF1302

IRF[International Rectifier]
Part No. IRF1302
OCR Text ...10 seconds Max. 180 130 700 230 1.5 20 350 See Fig.12a, 12b, 15, 16 TBD -55 to + 175 300 (1.6mm from case ) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased S...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)

File Size 516.95K  /  9 Page

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ...-- --- 11 56 45 40 7.5 1900 450 230 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.036 VGS = 10V, ID = 22A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 22A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V,...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 152.94K  /  10 Page

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ...-- 11 56 45 40 4.5 7.5 1900 450 230 Max. Units Conditions --- V V GS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.036 VGS = 10V, ID = 22A 4.0 V VDS = V GS, ID = 250A --- S V DS = 25V, ID = 22A 25 VDS = 100V, VGS = 0V A 250 VDS ...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ... 41 29 160 170 3.8 1.1 0.025 20 230 41 17 5.5 -55 to + 175 300 (1.6mm from case) Units A W W/C V mJ A mJ V/ns C VGS EAS IAR EAR dv/dt TJ, TSTG Thermal Resistance Parameter RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

File Size 319.11K  /  8 Page

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    IRF1704

International Rectifier
Part No. IRF1704
OCR Text ...or M3 srew Max. 170 120 680 230 1.3 20 670 100 23 1.9 -55 to + 200 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Gr...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)
POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)

File Size 100.05K  /  8 Page

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    IRF2804S-7P

IRF[International Rectifier]
Part No. IRF2804S-7P
OCR Text ...lsed Drain Current Max. 320 230 160 1360 330 2.2 20 630 1050 See Fig.12a,12b,15,16 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Singl...
Description AUTOMOTIVE MOSFET

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    IRF2805L IRF2805S

IRF[International Rectifier]
Part No. IRF2805L IRF2805S
OCR Text ...00 VGS = 20V nA -200 VGS = -20V 230 ID = 104A 57 nC VDS = 44V 78 VGS = 10VT --- VDD = 28V --- ID = 104A ns --- RG = 2.5 --- VGS = 10V T D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF ...
Description 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 221.43K  /  11 Page

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    IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text ...2 or M3 srew Max. 82 58 280 230 1.5 20 43 23 5.9 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient (PCB mount)** Typ...
Description HEXFET Power MOSFET HEXFET功率MOSFET
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

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