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  0.0018 Datasheet PDF File

For 0.0018 Found Datasheets File :: 4252    Search Time::3.422ms    
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    2SA1309A

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SA1309A
OCR Text ... Conditions VCB = -10V, IE = 0 VCE = -10V, IB = 0 IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCE = -10V, IC = -2mA IC = -50mA, IB = -5mA VCB = -10V, IE = 1mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz min typ max -100 -...
Description Silicon PNP epitaxial planer type

File Size 34.66K  /  2 Page

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    2SA1876

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SA1876
OCR Text ...-1 -1.5 10 Ratings Min -80 Max -0.1 Max -0.1 Max -0.1 Min 70 Max -0.3 Max -1.2 Max 12.5 TYP 50 Max 0.3 Max 1.5 Max 0.2 Unit V V V A A A A W Electrical Characteristics (Tc=25) Item Symbol Collector to Emitter Sustaining Voltage VCEO...
Description Switching Power Transistor(-3A PNP)

File Size 383.99K  /  8 Page

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    2SB1587

SANKEN[Sanken electric]
Part No. 2SB1587
OCR Text 0 ) E Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1587 -160 -150 -5 -8 -1 75(Tc=25C) 150 -55 to +150 (Ta=25C) Unit V V V A A W C C 2SB1587 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO h...
Description Silicon PNP Epitaxial Planar Transistor(Audio/ Series Regulator and General Purpose)
Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)

File Size 25.24K  /  1 Page

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    2SB1631

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SB1631
OCR Text ...00.2 4.20.2 5.00.1 10.00.2 1.0 q 2.50.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping (TC=25C) Rati...
Description Silicon PNP epitaxial planar type(For power amplification) 3 A, 60 V, PNP, Si, POWER TRANSISTOR

File Size 51.80K  /  3 Page

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    2SC2612

HITACHI[Hitachi Semiconductor]
Part No. 2SC2612
OCR Text ... Unit V V Test conditions I C = 0.2 A, RBE = , L = 100 mH I C = 3 A, IB1 = -IB2 = 0.6 A VBE = -5 V, L = 180 H, Clamped I E = 10 mA, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = VCE = 5 V, IC = 1.5 A*1 VCE = 5 V, IC = 3.0 A*1 V V s s s I C...
Description Silicon NPN Transistor
Silicon NPN Triple Diffused

File Size 38.68K  /  7 Page

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    2SC2816

HITACHI[Hitachi Semiconductor]
Part No. 2SC2816
OCR Text ... Unit V V Test conditions I C = 0.2 A, RBE = , L = 100 mH I C = 5 A, IB1 = -IB2 = 1.0 A VBE = -5.0 V, L = 180 H, Clamped I E = 10 mA, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = VCE = 5.0 V, IC = 2.5 A*1 VCE = 5.0 V, IC = 5 A*1 V V s s s...
Description Silicon NPN Triple Diffused

File Size 39.61K  /  7 Page

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    2SC3311A 2SA1309A

PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
Part No. 2SC3311A 2SA1309A
OCR Text ...* Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = -2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ 0.70.1 marking...
Description Transistor
Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 35.74K  /  2 Page

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    2SC3355 2SC3355-T

NEC[NEC]
Part No. 2SC3355 2SC3355-T
OCR Text ...millimeters (inches) 5.2 MAX. (0.204 MAX.) FEATURES * Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz * High Power G...
Description For amplify low noise and high frequency
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

File Size 100.42K  /  8 Page

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    2SC3980 2SC3980A

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SC3980 2SC3980A
OCR Text ...nit: mm s Features q q q q 0.7 q 16.20.5 12.5 3.5 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack pack...
Description DIODE SWITCHING DUAL SERIES 50V 300mA-Io 350mW 4ns-trr SOT-23 3K/REEL
Silicon NPN triple diffusion planar type

File Size 58.10K  /  3 Page

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    2SC3981 2SC3981A

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SC3981 2SC3981A
OCR Text ...nit: mm s Features q q q q 0.7 q 16.20.5 12.5 3.5 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack pack...
Description TRANS NPN 40V 350MW SMD SOT23 5 A, 800 V, NPN, Si, POWER TRANSISTOR
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.24K  /  3 Page

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