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  0.0065- Datasheet PDF File

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    2SC5626

List of Unclassifed Manufacturers
ETC
Part No. 2SC5626
OCR Text ...SO*@OE} 'PE 2.1 1.25 :mm 0.425 0.425 "A*@'* *E'*OESOOEI1/2*AZbgI*OE^A*-"xZA`A"\ *Eg"W"Zu"g*"f T* 1 2 3 --p*@"r *O...0065 '**eOES`ZsAv--t' 6-41 A`S*YOEvESO*ee *E3/4ZIiZ*AM--SIOEuaE"wAeU**A"1/4"`IiIOEI*a"-1/2eAe"(R)...
Description TRANSISTOR
2SC5626

File Size 97.50K  /  4 Page

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    BSFJ78G05

SHARP[Sharp Electrionic Components]
Part No. BSFJ78G05
OCR Text ...zer with I2C TSA5055S (Clock: 4.0 MHz) 5 0.3 V 25 V 30 1.5 V 27/18 MHz PLL F type female - PRODUCT INFORMATION BSFJ78G05 MECHANICAL DI...0065 Fax (919) 941-0066 NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 NAME RF INPUT A RF IN...
Description Satellite Tuner

File Size 56.80K  /  2 Page

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    FDD6670 FDD6670A

FAIRCHILD[Fairchild Semiconductor]
Part No. FDD6670 FDD6670A
OCR Text ...es * * * 66 A, 30 V. RDS(on) = 0.008 @ VGS = 10 V RDS(on) = 0.010 @ VGS = 4.5 V. Low gate charge (35nC typical). Fast switching speed. Hi...0065 0.0090 0.0085 3 V mV/C 0.008 0.013 0.010 ID(on) gFS 50 55 A S Dynamic ...
Description N-Channel, Logic Level, PowerTrench MOSFET

File Size 194.15K  /  8 Page

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    IRL1004

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IRF[International Rectifier]
Part No. IRL1004
OCR Text ... l D VDSS = 40V RDS(on) = 0.0065 G ID = 130A S Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This ...
Description HEXFET? Power MOSFET
HEXFET Power MOSFET

File Size 85.53K  /  8 Page

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    FB180SA10

IRF[International Rectifier]
Part No. FB180SA10
OCR Text ...e D VDSS = 100V RDS(on) = 0.0065W G ID = 180A S Description Fifth Generation, high current density HEXFETS are paralled int...0065 W VGS = 10V, ID = 108A --- 4.0 V VDS = VGS, ID = 250A --- --- S VDS = 25V, ID = 108A --- 50 VD...
Description HEXFET? Power MOSFET

File Size 132.85K  /  8 Page

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    INTERSIL[Intersil Corporation]
Part No. HRF3205S HRF3205 FN4447
OCR Text 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced pow...0065 14 100 43 70 4000 1300 480 7.5 MAX 4 25 250 100 0.008 170 32 74 - UNITS V V A A nA V ns ...
Description 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs
From old datasheet system

File Size 82.24K  /  8 Page

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    IRHNA57064

International Rectifier
Part No. IRHNA57064
OCR Text ...S(on) IRHNA57064 100K Rads (Si) 0.0056 IRHNA53064 300K Rads (Si) 0.0056 IRHNA54064 600K Rads (Si) 0.0056 ID 75*A 75*A 75*A IRHNA57064 60V...0065 75*A International Rectifier's R5TM technology provides high performance power MOSFETs for spac...
Description RADIATION HARDENED POWER MOSFET

File Size 122.85K  /  8 Page

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    RT1A3906

ETC
Part No. RT1A3906
OCR Text 0.5 2.5 1.5 0.5 0.95 1 2.9 1.90 0.95 2 3 Ta=25 VCEO VCBO VEBO Ic -40 -40 -5.0 -200 V 0 0...0065 '**eOES`*Zs'Av--t' 6-41 A`S*YOEvESO*eSe *E*3/4ZI*iZ*A*M--S*IOEu*aE"wAeU**A"1/4"`I**iIOEI*a"-...
Description
File Size 131.10K  /  3 Page

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    INTERSIL[Intersil Corporation]
Part No. HUF76145S3S HUF76145P3 FN4401
OCR Text 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFETTM pr...0065 V THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Juncti...
Description From old datasheet system
75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

File Size 108.47K  /  10 Page

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