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0.05-3 Datasheet PDF File

For 0.05-3 Found Datasheets File :: 34724 Search Time::5.187ms
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				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	INA-01170
OCR Text	...n mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 .495 .030 12.57 .76 .035 .89 6-89
Description	Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier
File Size	43.00K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010Z IRF1010ZL IRF1010ZS
OCR Text	...MAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectang...3.0 Charge Fig 13a. Basic Gate Charge Waveform 2.0 L DUT 0 VCC 1.0 1K -75 ...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET
File Size	298.51K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804S-7P
OCR Text	...AL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectang...3.5 3.0 2.5 2.0 1.5 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 Charge Fig 13a. Basic Gate ...
Description	AUTOMOTIVE MOSFET
File Size	260.32K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804 IRF2804L IRF2804S
OCR Text	...MAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Th...3.0 Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 2.0 50K 12V ...
Description	40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	273.77K / 12 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF2907Z IRF2907ZL IRF2907ZS IRF2907S IRF2B907Z IRF2B907ZL IRF2B907ZS
OCR Text	... 0.01 0.1 1 0.0001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance...3.5 QGD 4.0 Charge 3.0 Fig 13a. Basic Gate Charge Waveform 2.5 ID = 250A 2.0 ...
Description	AUTOMOTIVE MOSFET 汽车MOSFET 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	359.66K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text	... 0.007 0.010 VGS = 10V 0.005 0 50 100 150 200 250 300 ID , Drain Current ( A ) 0.006 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate -to...3 ) 2 .6 2 (.1 0 3 ) 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) 3 .7 8 (.1 4 9 ) 3 .5 4 (.1 3 9 ) -...
Description	20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A? Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?) Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A) CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条? TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 77A I(D) \| TO-263AB
File Size	123.62K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3708 IRF3708L IRF3708S
OCR Text	...15 VGS = 4.5V 0.010 VGS = 10V 0.005 0 50 100 150 200 250 300 ID , Drain Current ( A ) 0.011 0.009 ID = 31A 0.007 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Curren...
Description	Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET（减振钢板基本\u003d 30V的，的Rdson）最大值\u003d 12mohm，身份证\u003d 62A条） Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
File Size	137.00K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3717
OCR Text	... DM x Z thJA 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 +T A 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maxi...3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D...
Description	HEXFETPower MOSFET
File Size	246.14K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3805 IRF3805L IRF3805S
OCR Text	...AL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectang...3.5 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 3.0 ...
Description	AUTOMOTIVE MOSFET
File Size	358.50K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text	...030 ( 0.50 ) 0.020 4 0.005-0.001 +0.003 1.20 0.047MAX K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C...3 4 1 N.C N.C N.C /WP NC 2 3 4 5 6 N.C N.C N.C N.C A B N.C A B A...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	679.73K / 42 Page	View it Online	Download Datasheet

For 0.05-3 Found Datasheets File :: 34724 Search Time::5.187ms
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