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				DATADELAY[Data Delay Devices, Inc.]
Part No.	3D7110S-8 3D7110 3D7110-.75 3D7110-1 3D7110-1.5 3D7110-2 3D7110-2.5 3D7110-4 3D7110-5 3D7110-8 3D7110D-.75 3D7110D-1 3D7110D-1.5 3D7110D-2 3D7110D-2.5 3D7110D-4 3D7110D-5 3D7110D-8 3D7110G-.75 3D7110G-1 3D7110G-1.5 3D7110G-2 3D7110G-2.5 3D7110G-4 3D7110G-5 3D7110G-8 3D7110S-.75 3D7110S-1 3D7110S-1.5 3D7110S-2 3D7110S-2.5 3D7110S-4 3D7110S-5
OCR Text	...ACKAGES IN N/C O2 O4 O6 O8 GND 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VDD O1 O3 O5 O7 O9 O10 All-silicon, low-power CMOS technology IN 1 14 VDD TTL/CMOS compatible inputs and outputs N/C 2 13 O1 Vapor phase, IR and wave solderable O2 3 12 O3 ...
Description	MONOLITHIC 10-TAP FIXED DELAY LINE (SERIES 3D7110)
File Size	127.36K / 5 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EIC1212-8
OCR Text	... Single Carrier Level. Note: 1) Tested with 100 Ohm gate resistor. 3) Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING1,2 SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG Notes: 1. 2. CHARACTERISTIC Drain to Source Volta...
Description	12.20-12.70 GHz 8-Watt Internally Matched Power FET
File Size	81.01K / 1 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260CTT-7 HM514260CTT-8 HM514260CTT-6 HM514260CTT-6R HM514260C HM51S4260CTT-8 HM514260CLJ-6 HM514260CLJ-6R HM514260CLTT-6 HM514260CLTT-6R HM514260CLTT-7 HM514260CLTT-8 HM51S4260C HM51S4260CJ-6 HM51S4260CJ-6R HM51S4260CJ-7 HM51S4260CJ-8 HM51S4260CLJ-6 HM51S4260CLJ-6R HM51S4260CLJ-7 HM51S4260CLJ-8 HM51S4260CLTT-6 HM51S4260CLTT-6R HM51S4260CLTT-7 HM51S4260CLTT-8 HM51S4260CTT-6 HM51S4260CTT-6R HM51S4260CTT-7
OCR Text	1.0 Jun. 12, 1995 Description The Hitachi HM51(S)4260C is CMOS dynamic RAM organized as 262,144-word x 16-bit. HM51(S)4260C has realized...8 m CMOS process technology and some new CMOS circuit design technologies. The HM51(S)4260C offers f...
Description	80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 262,144-WORD X 16-BIT DYNAMIC RANDOM ACCESS MEMORY 60ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
File Size	260.25K / 27 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM4132G271BTQ-8 KM4132G271BTQ_R-8 KM4132G271B KM4132G271BQ_R-10 KM4132G271BQ_R-7 KM4132G271BQ_R-8 KM4132G271BTQ_R-10 KM4132G271BTQ_R-7 KM4132G271BTQR-10 KM4132G271BTQR-8 KM4132G271BQR-8 KM4132G271BTQR-7 KM4132G271BQR-10
OCR Text	...ecification without notice. -1- Rev. 2.4 (May 1998) KM4132G271B Revision History Revision 2.4 (May 1998) * Added KM4132G271B-7 p...8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going ...
Description	128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
File Size	1,032.84K / 51 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp.
Part No.	MH32S64APHB-8 MH32S64APHB-7 MH32S64APHB-6
OCR Text	...e without notice. mit-ds-0379-0.1 description the mh32s64aphb is 33554432 - word by 64-bit synchronous dram module. this consists of sixt...8:100mhz single 3.3v0.3v power supply fully synchronous operation referenced to clock rising edge b...
Description	2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM 2147483648位（33554432 -文字4位）同步DRAM 2 /147 /483 /648-BIT (33 /554 /432 - WORD BY 64-BIT)Synchronous DRAM
File Size	711.54K / 55 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp.
Part No.	MH16S64DAMD-8
OCR Text	...lock rising edge burst length- 1/2/4/8/full page(programmable) 4 bank operation controlled by ba0,1(bank address) /cas latency- 2/3(programmable) application pc main memory auto precharge / all bank precharge controlled by a10 burst type-...
Description	1073741824-BIT (16777216 - WORD BY 64-BIT)Synchronous DRAM 1073741824位（16777216 -文字4位）同步DRAM
File Size	726.59K / 55 Page	View it Online	Download Datasheet

				SENSITRON SEMICONDUCTOR
Part No.	S1612-8
OCR Text	1 916 , rev. - 221 west industry court deer park, ny 11729-4681 phone (631) 586-7600 fax (631) 242-9798 world wide web site ...8/20 m s protects 8 l ines so-16 packaging description schematic & pin configuration the s1...
Description	300 W, UNIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE
File Size	83.90K / 3 Page	View it Online	Download Datasheet

				SENSITRON SEMICONDUCTOR
Part No.	S16LCC03-8
OCR Text	1 919 , rev. - 221 west industry court deer park, ny 11729-4681 phone (631) 586-7600 fax (631) 242-9798 world wide web site ...8/20 m s protects 8 lines so-16 packaging description schematic & pin configuration the s16lc...
Description	300 W, BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE
File Size	84.69K / 3 Page	View it Online	Download Datasheet

				IC Plus Corp.
Part No.	TC3097-8
OCR Text	...n (ports) per chip including: - 1 AUI PORT with fully compatible and drive capability (50m AUI cable). - 8 TP PORT with fully compatible and drive capability (100m TP cable). Cascadable for large multiple LEMRIC hub applications. On-chip El...
Description	Lite End Multiport Repeater Interface Controller
File Size	454.76K / 35 Page	View it Online	Download Datasheet

				Infineon Technologies A... Infineon Technologies AG
Part No.	HYS64D32020GU-8-A HYS64D16000GU-8-A
OCR Text	... data sheet, rev. 1.03, jan. 2004 memory products edition 2004-01 published by infineon technologies ag, st.-martin-strasse ...8]-a hys[64/72]d32020gu-[7/8]-a unbuffered ddr sdram-modules ddr sdram ...
Description	Unbuffered DDR SDRAM-Modules 无缓冲DDR SDRAM内存模块
File Size	635.08K / 30 Page	View it Online	Download Datasheet

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