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10.21-mm Datasheet PDF File

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				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	HM6264BI HM6264BLFPI-10T HM6264BLFPI-12T HM6264BLPI-10 HM6264BLPI-12 HM6264
OCR Text	...ures * Single 5 V supply: 5 V 10% * Access time: 100/120 ns (max) * Power dissipation: Standby: 10 W (typ) Operation: 15 mW (typ) (f = 1...21 20 19 18 17 16 15 VCC WE CS2 A8 A9 A11 OE A10 CS1 I/O8 I/O7 I/O6 I/O5 I/O4 (Top view) 2 ...
Description	64k SRAM (8-kword x 8-bit) Wide Temperature Range version
File Size	70.58K / 17 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
Part No.	HM6264 HM6264B HM6264BLFP-10 HM6264BLFP-10LT HM6264BLFP-8LT HM6264BLP-10L HM6264BLP-8L HM6264BLSP-10L HM6264BLSP-8L HM6264BLP-XXL HM6264BLSP-XXL HM6264BLFP-XXLT
OCR Text	...0 ns (max) * Low power Standby: 10 W (typ) Operation: 15 mW (typ) (f = 1 MHz) * Single 5 V supply * Completely static memory No clock or tim...21 20 19 18 17 16 15 VCC WE CS2 A8 A9 A11 OE A10 CS1 I/O8 I/O7 I/O6 I/O5 I/O4 (Top view) Pin D...
Description	Low Power SRAMs IC,SRAM,8KX8,CMOS,DIP,28PIN,PLASTIC 64 k SRAM (8-kword x 8-bit) Data Selectors/Multiplexers 20-LCCC -55 to 125
File Size	74.92K / 15 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
Part No.	HY62WT08081E HY62WT08081E-DGC HY62WT08081E-DGE HY62WT08081E-DGI HY62WT08081E-DPC HY62WT08081E-DPE HY62WT08081E-DPI HY62WT08081E-DTC HY62WT08081E-DTE HY62WT08081E-DTI HY62WT0808 HY62WT08081E-DG70C
OCR Text	...rd) Standby Current(uA) LL-part 10 5 20 8 20 8 Temperature (C) 0~70(Normal) -25~85(Extended) -40~85(Industrial) Voltage Speed Operation (...21 20 19 18 17 16 15 Vcc /WE A13 A8 A9 A11 /OE A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4 A14 A12 A7 A6 A5 ...
Description	HY62WT08081E Series 32Kx8bit CMOS SRAM HY62WT08081E系列32Kx8bit CMOS SRAM
File Size	202.96K / 13 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	INA-01170
OCR Text	... MMICs is fabricated using HP's 10 GHz fT, 25 GHz f MAX, ISOSATTM-I silicon bipolar process which uses nitride self-alignment, submicrometer...21 .25 .28 .33 .37 .40 .43 .44 .44 .44 .46 .48 -20 -39 -65 -83 -96 -107 -115 -130 -140 -150 -164 ...
Description	Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier
File Size	43.00K / 3 Page	View it Online	Download Datasheet

				SEME-LAB[Seme LAB]
Part No.	IRF460
OCR Text	10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 22.23 (...21 84 20 300 2.4 -55 to 150 300 V A A V W W/C C STATIC ELECTRICAL RATINGS (Tcase = 25C unless oth...
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	16.77K / 2 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF9530-220M
OCR Text	10.41 10.67 P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 0.89 1.14 16.38 16.89 13.39 13.64 1...21 60 140 140 140 -9.3 -37 -4 V / C W V S(W )W( VGS(th) Gate Threshold Voltage gfs IDSS IG...
Description	P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
File Size	18.21K / 2 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text	...ange Soldering Temperature, for 10 seconds Max. -6.7 -4.7 -27 3.7 43 0.29 20 140 -6.7 4.3 -4.5 -55 to + 175 300 (1.6mm from case ) U...21 ) 1. 75 (.0 69 ) 1. 25 (.0 49 ) 1 6. 10 (.6 34 ) 1 5. 90 (.6 26 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8)...
Description	Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A) HEXFET? Power MOSFET -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	357.87K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text	...ange Soldering Temperature, for 10 seconds Max. -11 -7.7 -44 3.7 60 0.40 20 240 -11 6.0 -4.5 -55 to + 175 300 (1.6mm from case ) Uni...21 ) 1. 75 (.0 69 ) 1. 25 (.0 49 ) 1 6. 10 (.6 34 ) 1 5. 90 (.6 26 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8)...
Description	-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A) Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
File Size	307.08K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text	...ange Soldering Temperature, for 10 seconds Max. -18 -13 -72 3.7 88 0.59 20 370 -18 8.8 -4.5 -55 to + 175 300 (1.6mm from case ) Unit...21 ) 1. 75 (.0 69 ) 1. 25 (.0 49 ) 1 6. 10 (.6 34 ) 1 5. 90 (.6 26 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8)...
Description	-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A) Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)
File Size	330.76K / 10 Page	View it Online	Download Datasheet

For 10.21-mm Found Datasheets File :: 100361 Search Time::2.859ms
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