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    DS1642-70 DS1642-100

MAXIM - Dallas Semiconductor
Dallas Semiconducotr
Part No. DS1642-70 DS1642-100
OCR Text ...er access times of 70 ns and 100 ns quartz accuracy 1 minute a month @ 25c, factory calibrated bcd coded year, month, date, day, hours, minutes, and seconds with leap year compensation valid up to 2100 power-fail write protectio...
Description Nonvolatile Timekeeping RAM
Nonvolatile Real Time Clocks RAM

File Size 137.88K  /  11 Page

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    DS1643-70 DS1643P DS1643P-100 DS1643P-70 DS16431

MAXIM - Dallas Semiconductor
Part No. DS1643-70 DS1643P DS1643P-100 DS1643P-70 DS16431
OCR Text ...power Access times of 70 ns and 100 ns BCD coded year, month, date, day, hours, minutes, and seconds with leap year compensation valid up to 2100 Power-fail write protection allows for 10% VCC power supply tolerance Lithium energy source is...
Description Nonvolatile Timekeeping RAM
Real-Time Clock

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    HYNIX SEMICONDUCTOR INC
Part No. HY62U8200BLLSR-I-70
OCR Text ...) hy62u8200 b 2.7~3.3 70* /85/100 5 25 0~70 hy62u8200 b - e 2.7~3.3 70 * /85/100 5 25 - 25 ~85(e) hy62u8200 b -i 2.7~3.3 70 */ 85/100 5 25 -40~85( i ) note 1. blank : commercial, e : extended , i : industrial 2. current value ...
Description 256K X 8 STANDARD SRAM, 70 ns, PDSO32

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    HYB3116160BSTL-70 HYB3116160BSTL-60 HYB3116160BSTL-50 HYB3116160BST-70 HYB3116160BST-60 HYB3116160BST-50 HYB3116160BSJ-7

SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. HYB3116160BSTL-70 HYB3116160BSTL-60 HYB3116160BSTL-50 HYB3116160BST-70 HYB3116160BST-60 HYB3116160BST-50 HYB3116160BSJ-70 HYB3116160BSJ-60 HYB3116160BSJ-50 HYB3118160BSTL-70 HYB3118160BSTL-60 HYB3118160BSTL-50 HYB3118160BST-70 HYB3118160BST-60 HYB3118160BST-50 HYB3118160BSJ-70 HYB3118160BSJ-60 HYB3118160BSJ-50 HYB3116160BSJ
OCR Text ...S Output high voltage (IOUT = - 100 A) CMOS Output low voltage (IOUT = 100 A) Input leakage current,any input (0 V VIH Vcc + 0.3V, all oth...70 ns version (RAS, CAS, address cycling, tRC = tRC min.) Standby VCC supply current (RAS = CAS = VI...
Description 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
1M x 16-Bit Dynamic RAM (1k & 4k -Refresh)

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    CDST-70-HF CDST-56-HF CDST-99-HF

Comchip Technology
Part No. CDST-70-HF CDST-56-HF CDST-99-HF
OCR Text ... 2 0.006(0.15) 0.002(0.05) 0.100(2.55) 0.089(2.25) Circuit diagram 3 3 3 0.020(0.50) 0.012(0.30) 0.008(0.20) min 0.004(0.10) max ...70-HF Marking Code: A4 CDST-56-HF Marking Code: A1 Maximum Ratings (at Ta=25C unless otherwise...
Description Small Signal Switching Diodes

File Size 84.32K  /  4 Page

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    Winbond Electronics, Corp.
Part No. W27C02-70 W27C02 W27C02Q-70 W27C02P-70
OCR Text ..., the chip can be erased within 100 mS by using an EPROM writer with a special erase algorithm. There are two ways to enter Erase mode. One ...70 -65 to +125 -0.5 to VDD +0.5 -0.5 to +7.0 -0.5 to +14.5 -0.5 to +14.5 UNIT C C V V V V Note: E...
Description EPROM 存储
EEPROM|256KX8|CMOS|TSSOP|32PIN|PLASTIC
EEPROM|256KX8|CMOS|LDCC|32PIN|PLASTIC
256K X 8 ELECTRICALLY ERASABLE EPROM
NVM > EPROM
EEPROM|256KX8|CMOS|DIP|32PIN|PLASTIC

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    IS3-L67140V-70 AS3-L67130L-45 AS3-L67130L-70 AS3-L67130V-55 I4K-L67130L-45

TEMIC SEMICONDUCTORS
ATMEL CORP
Part No. IS3-L67140V-70 AS3-L67130L-45 AS3-L67130L-70 AS3-L67130V-55 I4K-L67130L-45
OCR Text ...py ( ports cmos level inputs) l 100 200 100 200 100 200 m ma max i ccop (13) operating supply current (both v 80 90 70 80 60 70 ma max ccop (13) pgppy ( ports active) l 80 100 70 90 60 80 ma max i ccop 1 (14) operating supply current ...
Description 1K X 8 DUAL-PORT SRAM, 70 ns, PQCC52
1K X 8 DUAL-PORT SRAM, 45 ns, PQCC52
1K X 8 DUAL-PORT SRAM, 55 ns, PQCC52
1K X 8 DUAL-PORT SRAM, 45 ns, PQCC48

File Size 196.53K  /  16 Page

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    MRF6522-70 MRF6522-70R3

Motorola, Inc.
飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
Freescale Semiconductor, Inc
Part No. MRF6522-70 MRF6522-70R3
OCR Text ...10 F, 35 Vdc Tantalum Capacitor 100 nF Chip Capacitor 22 pF Chip Capacitors, ACCU - P (0805) 2.7 pF Chip Capacitor, ACCU - P (0805) 4.7 pF C...70 Test Circuit Schematic VBIAS Ground VSUPPLY C1 R2 R3 R4 R1 T1 C2 R6 C3 C4 R5...
Description The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 射频MOSFET线的射频功率场效应晶体管N沟道增强型MOSFET的侧
Motor Driver IC; Driver Type:Motor; No. of Drivers:4; Supply Voltage Max:6V; Output Current Max:400mA; Package/Case:10-DFN/MLP; Leaded Process Compatible:Yes; On Resistance, Rds(on):1.2ohm; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes

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    SILICON STORAGE TECHNOLOGY INC
Part No. SST34HF1641A-70-4C-LS SST34HF1681-70-4E-LS SST34HF1641A-70-4E-LS SST34HF1681-70-4E-LSE SST34HF1681-70-4E-L1PE SST34HF1681-70-4C-LS SST34HF1641A-70-4E-L1P SST34HF1681-70-4C-LSE SST34HF1621A-70-4C-LFP SST34HF1621A-70-4C-LFPE SST34HF1621A-70-4E-LFP SST34HF1641A-70-4E-LSE SST34HF1641A-70-4C-L1PE SST34HF1641A-70-4E-L1PE SST34HF1621A-70-4E-LFPE SST34HF1641A-70-4C-LSE SST34HF1681-70-4C-L1PE
OCR Text ...perior reliability ? endurance: 100,000 cycles (typical) ? greater than 100 years data retention  low power consumption: ? active current: ...70 ns ?sram: 70 ns  latched address and data  fast erase and word-program: ? sector-erase time: 18...
Description SPECIALTY MEMORY CIRCUIT, PBGA56

File Size 520.06K  /  35 Page

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    Microchip Technology, Inc.
Part No. SST32HF202-70-4C-L3K SST32HF202-90-4C-L3K SST32HF202-70-4E-L3K SST32HF202-90-4E-L3K SST32HF402-70-4E-L3K SST32HF402-70-4C-L3K SST32HF402-90-4C-L3K SST32HF402-90-4E-L3K
OCR Text ...perior reliability ? endurance: 100,000 cycles (typical) ? greater than 100 years data retention  low power consumption: ? active current: ...70 and 90 ns ? sram: 70 and 90 ns  latched address and data for flash  flash fast erase and word-p...
Description RAW120-02378-0001
CY7C68013A, CY7C68014A, CY7C68015A, CY7C68016A: EZ-USB FX2LP™ USB Microcontroller High-Speed USB Peripheral Controller
2K x 8 Dual-Port Static RAM
Low-Cost 3.3V Zero Delay Buffer
MIXED MEMORY|SRAM EEPROM|CMOS|BGA|48PIN|PLASTIC 混合存储器|静态存储器EEPROM中|的CMOS | BGA封装| 48PIN |塑料

File Size 766.29K  /  26 Page

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