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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AOK20S60
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OCR Text |
...drain-source on-resistance i s =10a,v gs =0v, t j =25c diode forward voltage input capacitance v gs =0v, v ds =100v, f=1mhz output capacitan...600v, v gs =0v v ds =5v,i d =250 m a a. the value of r q ja is measured with the device in a stil... |
Description |
600v 20A a MOS Power Transistor
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File Size |
349.18K /
6 Page |
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it Online |
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MSK[M.S. Kennedy Corporation]
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Part No. |
MSK4454U MSK4454D MSK4454G MSK4454S
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OCR Text |
...TS
OUTPUT CHARACTERISTICS Ic=10a VC-E (On) Voltage (Each IGBT) 3 V+ = 600v Leakage Current (Each IGBT) ID=10a Instantaneous Forward Voltage (FRED Flyback Diode) 3 ID=10a, di/dt=100A/S, Vr=350V Reverse Recovery Time BIAS SUPPLY CHARACTERI... |
Description |
10 AMP, 600 VOLT IGBT SMART POWER 3-PHASE MOTOR DRIVE HYBRID
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File Size |
220.21K /
6 Page |
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it Online |
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Icemos Technology
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Part No. |
ICE10N60
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OCR Text |
...t summary i d t a =25 o c 10a max v ( br)dss i d =250ua 600v min r ds(on) v gs =10v 0.28 typ q g v ds =480v 41nc typ icemos and its sister company 3 d semi own the fundamental patents ... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
551.81K /
9 Page |
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it Online |
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Price and Availability
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