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  10v 5v Datasheet PDF File

For 10v 5v Found Datasheets File :: 56276    Search Time::1.484ms    
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    SamHop Microelectronics
Part No. SP3900
OCR Text ... 74 @ vgs=4.5v 42 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power d...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 108.83K  /  7 Page

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    FreesCale
Part No. MC4805
OCR Text ...30 r ds(on) (m) 21 @ v gs = -10v 35 @ v gs = -4.5v gate-source voltage power dissipation a t <= 10 sec steady state r ja i d a p d w key features: ? low r ds(on) trench technology ? low thermal impedance ? fast switching speed ...
Description Dual P-Channel 30-V (D-S) MOSFET

File Size 335.01K  /  5 Page

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    CES2307

Chino-Excel Technology
Part No. CES2307
OCR Text 10v. RDS(ON) = 120m @VGS = -4.5v. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. CES2307 D D G SOT-23 G S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-...
Description P-Channel Enhancement Mode Field Effect Transistor

File Size 401.81K  /  4 Page

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    CEM9926A

Chino-Excel Technology
Part No. CEM9926A
OCR Text ...S VSD VGS = 0V, IS = 1.7A VDS = 10v, ID = 6A, VGS = 4.5v VDD = 10v, ID = 1A, VGS = 4.5v, RGEN = 6 8 10 22 6 5 1 1.5 1.7 1.2 20 20 45 15 7 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) ...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 139.95K  /  4 Page

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    CEM9926A10

Chino-Excel Technology
Part No. CEM9926A10
OCR Text ...S VSD VGS = 0V, IS = 1.7A VDS = 10v, ID = 6A, VGS = 4.5v VDD = 10v, ID = 1A, VGS = 4.5v, RGEN = 6 10 7 34 6 6.8 0.5 1.8 1.7 1.2 20 14 68 12 8.8 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VG...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 408.33K  /  4 Page

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    2SB792 2SB792A 2SD814 2SA1310 2SB0792A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB792 2SB792A 2SD814 2SA1310 2SB0792A
OCR Text ...0mA IC = -30A, IB = -3mA VCB = -10v, IE = 10mA, f = 200MHz VCB = -10v, IE = 0, f = 1MHz VCE = -10v, IC = -1mA, GV = 80dB, Rg = 100k, Functio...5v 25C Ta=75C -80 -25C IC -- VBE Collector power dissipation PC (mW) Collector current IC (...
Description Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

File Size 36.47K  /  2 Page

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    C3795

Panasonic Semiconductor
Part No. C3795
OCR Text ...= 0.6A IC = 3A, IB = 0.6A VCE = 10v, IC = 0.5A, f = 1MHz min typ max 100 100 100 Unit A A V 2SC3795 2SC3795A 500 15 8 1 1....5v 300 100 30 10 3 1 0.3 0.1 0.01 0.03 fT -- IC VCE=10v f=1MHz TC=25C Base to emitter saturat...
Description Search --To 2SC3795

File Size 77.16K  /  3 Page

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    UTC
Part No. UTCCD4069
OCR Text ...5v, v in =v dd or v ss v dd =10v, v in =v dd or v ss v dd =15v, v in =v dd or v ss 1.0 2.0 4.0 a low level output voltage v ol |i o |<1 a v dd =5v v dd =10v v dd =15v 0 0 0 0.05 0.05 0.05 v high leve...
Description Inverter Circuits

File Size 147.33K  /  5 Page

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    UPA2631T1R UPA2631T1R-E2-AX

Renesas Electronics Corporation
Part No. UPA2631T1R UPA2631T1R-E2-AX
OCR Text ...-100 -0 -0.5 -1 -1.5 -2 v ds = -10v pulsed t a =150c 75c 25c -55c v gs - gate to source voltage - v gate to source cut-off v...5v pulsed t a = 150c 75c 25c -55c i d ? drain current - a drain to source on-state resista...
Description P-CHANNEL MOSFET -20 V, -8.0 A, 32 m

File Size 236.36K  /  7 Page

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    UPA2600T1R UPA2600T1R-E2-AX

Renesas Electronics Corporation
Part No. UPA2600T1R UPA2600T1R-E2-AX
OCR Text ... | y fs | 6.5 s v ds = 10v, i d = 3.5 a drain to source on-state resistance ? 1 r ds(on)1 11.1 13.8 m v gs = 4.5 v, i...5v v gs =4.5v v ds - drain to source voltage - v i d - drain current - a 0.0001 0.0...
Description N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 m

File Size 234.58K  /  7 Page

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