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SKY77 4LVC2G BY268GP AP3102 BU4507DZ IRFU110 LTC2054 89C58RD
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  11.74 Datasheet PDF File

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ...srew Max. 100 71 400 170 1.11 20 350 60 17 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns...74 110 ns TJ = 25C, IF = 60A --- 188 280 nC di/dt = 100A/s Intrinsic turn-on time is negligible (tu...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

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    IRF1302L IRF1302S

IRF[International Rectifier]
Part No. IRF1302L IRF1302S
OCR Text ...lar Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1302S/IRF1302L 700 15V TOP ID 43A 74A 104A RG 20V D.U.T IAS tp EAS , Single Pulse Avalanche Ene...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

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    IRF1407L IRF1407S IRF1407STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF1407L IRF1407S IRF1407STRR
OCR Text ...- --- --- --- --- --- 160 35 54 11 150 150 140 4.5 7.5 5600 890 190 5800 560 1100 Max. --- --- 0.0078 4.0 --- 20 250 200 -200 250 52 81 --- --- --- --- --- Units V V/C V S A nA nC ns nH --- --- --- --- --- --- --- pF C...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB

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    IRF1407

International Rectifier
Part No. IRF1407
OCR Text ...ts C/W www.irf.com 1 10/11/01 IRF1407 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ ...74 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.09 --- ...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?)
POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ)
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)
Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ..., VDS = 25V, f = 1.0MHz (Figure 11) MIN - TYP 1300 320 69 5.0 MAX - UNITS pF pF pF nH Internal Source Inductance LS G LS S 12.5 - nH Junction to Case Junction to Ambient RJC RJA Free Air Operation - ...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

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    IRF3007

IRF[International Rectifier]
Part No. IRF3007
OCR Text ...junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS . Starting TJ = 25C, L = 0.24mH Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive R G = 25, IAS = 48A, VGS=10V (See Figure 12). avalanch...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

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    IRF3706 IRF3706L IRF3706S

IRF[International Rectifier]
Part No. IRF3706 IRF3706L IRF3706S
OCR Text ... Notes through are on page 11 www.irf.com 1 7/5/00 IRF3706/3706S/3706L Static @ TJ = 25C (unless otherwise specified) Param...74 78 120 Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25...
Description Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)

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    IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR

IRF[International Rectifier]
Part No. IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
OCR Text ...- Typ. --- 19 8.2 6.3 18 8.5 78 11.8 3.3 1990 707 50 Max. Units Conditions --- S VDS = 15V, ID = 49.6A --- ID = 24.8A --- nC VDS = 15V --- V...74 63 93 V ns nC ns nC VSD trr Qrr trr Qrr Conditions D MOSFET symbol showing the G integral r...
Description 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A)
Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A)
Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ...unction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. Uses IRF4905 data and test conditions Starting TJ = 25C, L = 1.3mH RG = 25, IAS = -38A. (See Figure 12) TJ 175C ** When mounted on 1" square PCB (FR-4 or...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ...unction temperature. ( See fig. 11 ) ISD -38A, di/dt -270A/s, VDD V(BR)DSS , TJ 175C Starting TJ = 25C, L = 1.3mH RG = 25, IAS = -38A. (See Figure 12) Pulse width 300s; duty cycle 2%. IRF4905 1000 VGS - 15V - 10V - ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

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