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  128m x16 flash memory 32m x16 Datasheet PDF File

For 128m x16 flash memory 32m x16 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    HN29W12811T-60

Hitachi Semiconductor
Part No. HN29W12811T-60
Description 128m AND type flash memory More than 8/029-sector (135/657/984-bit)

File Size 338.02K  /  42 Page

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    Hitachi,Ltd.
Part No. HN29W12811T-60
Description 128m AND type flash memory More than 8,029-sector (135,657,984-bit)

File Size 320.87K  /  42 Page

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    HN29W12811 HN29W12811T-60

Hitachi Semiconductor
Part No. HN29W12811 HN29W12811T-60
Description 128m AND type flash memory More than 8,029-sector (135,657,984-bit)

File Size 310.27K  /  42 Page

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    Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Part No. HY27LF081G2M-TCP HY27LF081G2M-TCS HY27LF161G2M-TCB HY27LF161G2M-TCS HY27SF081G2M-TCP HY27SF081G2M-TCB HY27LF081G2M-TCB HY27LF161G2M-TCP HY27SF081G2M-F HY27UF081G2M-F HY27SF161G2M-FP HY27UF161G2M-FP HY27SF081G2M-V HY27UF081G2M-V HY27SF161G2M-VP HY27UF161G2M-VP HY27LF081G2M-VCB HY27LF081G2M-VCP HY27LF081G2M-VCS HY27LF081G2M-VEP HY27LF081G2M-VES HY27LF081G2M-TMB HY27LF081G2M-TMP HY27LF081G2M-TMS HY27LF161G2M-TMB HY27LF161G2M-TMP HY27LF161G2M-TMS HY27SF081G2M-TMB HY27SF081G2M-TMP HY27SF081G2M-TMS HY27SF161G2M-TMB HY27SF161G2M-TMP HY27SF161G2M-TMS HY27UF081G2M-TMB HY27UF081G2M-TMP HY27UF081G2M-TMS HY27UF161G2M-TMB HY27UF161G2M-TMP HY27UF161G2M-TMS HY27LF081G2M-VMB HY27LF081G2M-VMP HY27LF081G2M-VMS HY27LF161G2M-VMB HY27LF161G2M-VMP HY27LF161G2M-VMS HY27SF081G2M-VMB HY27SF081G2M-VMP HY27SF161G2M-VMB HY27SF161G2M-VMP HY27SF161G2M-VMS HY27UF081G2M-VMB HY27UF081G2M-VMP HY27UF081G2M-VMS HY27UF161G2M-VMB HY27UF161G2M-VMP HY27UF161G2M-VMS HY27LF081G2M-VEB HY27SF081G2M-VMS HY27LF081G2M-TPMP HY27LF081G2M-VPMP HY27SF081G2M-TPMP HY27SF081G2M-VPMP HY27LF161G2M-TPIS HY27SF161G2M-TPIS HY27LF161G2M-TIS HY27LF161G2M-VIS HY27SF161G2M-TIS HY27SF161G2M-VIS HY27LF161G2M-VPIS HY27SF081G2M-TEP HY27SF081G2M-TP
Description Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes
3.3V Differential Transceiver 8-PDIP -40 to 85
1Gbit (128mx8bit / 64Mx16bit) NAND flash memory 1Gbit的(128mx8bit / 64Mx16bit)NAND闪存
1Gbit (128mx8bit / 64Mx16bit) NAND flash memory 128m X 8 flash 1.8V PROM, 30 ns, PDSO48
1Gbit (128mx8bit / 64Mx16bit) NAND flash memory 64M X 16 flash 1.8V PROM, 30 ns, PDSO48
1Gbit (128mx8bit / 64Mx16bit) NAND flash memory 64M X 16 flash 3.3V PROM, 30 ns, PDSO48
CONNECTOR ACCESSORY 128m X 8 flash 3.3V PROM, 30 ns, PDSO48
CONNECTOR ACCESSORY 64M X 16 flash 1.8V PROM, 30 ns, PDSO48
Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.2"; Tip/Nozzle Size:0.40 1Gbit的(128mx8bit / 64Mx16bit)NAND闪存
COILTRONICS RoHS Compliant: Yes 1Gbit的(128mx8bit / 64Mx16bit)NAND闪存
Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.1"; Tip/Nozzle Size:0.43 RoHS Compliant: Yes
   1Gbit (128mx8bit / 64Mx16bit) NAND flash memory

File Size 484.04K  /  48 Page

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    K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9F1G08Q0M-YIB0 K9F1G08U0M K9F1G08U0M-FCB0 K9F1G08U0M-FIB0 K9F1G08U0M-PC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9F1G08Q0M-YIB0 K9F1G08U0M K9F1G08U0M-FCB0 K9F1G08U0M-FIB0 K9F1G08U0M-PCB0 K9F1G08U0M-PIB0 K9F1G08U0M-VCB0 K9F1G08U0M-VIB0 K9F1G08U0M-YCB0 K9F1G08U0M-YIB0 K9F1G16Q0M K9F1G16Q0M-PCB0 K9F1G16Q0M-PIB0 K9F1G16Q0M-YCB0 K9F1G16Q0M-YIB0 K9F1G16U0M-PCB0 K9F1G16U0M-PIB0 K9F1G16U0M-YCB0 K9F1G16U0M-YIB0 K9F1G08U0A
Description 128m x 8 Bit / 64M x 16 Bit NAND flash memory
1Gb Gb 1.8V NAND flash Errata

File Size 712.11K  /  38 Page

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    E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28F256J3C-115 E28F256J3C-120 GE28F256J3C-120 E28F256J3C-125 GE28F256J3C-

Intel, Corp.
Intel Corp.
http://
Intel Corporation
Part No. E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28F256J3C-115 E28F256J3C-120 GE28F256J3C-120 E28F256J3C-125 GE28F256J3C-125 E28F256J3C-150 GE28F256J3C-150 E28F640J3A-150 RC28F128J3A-150 RC28F640J3A-120 E28F640J3A-120 RC28F320J3A-110 TE28F320J3C-150 E28F128J3A-115 E28F128J3A-120 E28F128J3A-125 E28F128J3A-150 TE28F256P30 PC28F640J3 TE28F128J3C GE28F320J3A-115 GE28F256J3A-115 GE28F320J3C-150 GE28F320J3A-150 GE28F640J3A-115 GE28F640J3C-150 GE28F640J3A-150 GE28F320J3C-115 GE28F128J3C-150 TE28F640J3C-120 TE28F320J3A-120 TE28F640J3A-120 E28F320J3C-110 E28F640J3C-110 TE28F320J3C-120 E28F640J3C-115 GE28F320J3A-110 PC28F128J3A-125 TE28F128J3A-125 GE28F128J3C-125 GE28F128J3A-125 JS28F128J3A-150 JS28F128J3C-150 JS28F128J3C-110 E28F256J3A-150 E28F256J3A-120 E28F256J3A-125 GE28F640J3A-110 GE28F640J3C-125 GE28F640J3A-120 GE28F640J3A-125 GE28F640J3C-110 TE28F256J3A-125 TE28F256J3C-125 TE28F128J3A-120 TE28F128J3C-125 RC28F128J3C-120 PC28F128J3C-120 JS28F256J3C-125 GE28F256J3A-125 JS28F256J3C-150 GE28F256J3A-110 GE28F128J3A-120 GE28F128J3A-110 E28F320J3C-125 RC28F256J3A-110 RC28F128J3A-110 JS28F128J3C-115 JS28F128J3A-115 JS28F256J3A-125 TE28F128J3A-110 JS28F128J3C-125 E28F128J3C-115 RC28F256J3A-120
Description Intel Strataflash memory (J3) 英特Strataflash存储器(J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔Strataflash存储器(J3
Intel Strataflash memory (J3) 16M X 16 flash 2.7V PROM, 125 ns, PDSO56
Intel Strataflash memory (J3) 英特尔Strataflash存储器(J3
Intel Strataflash memory (J3) 8M X 16 flash 3V PROM, 150 ns, PDSO56
Intel Strataflash memory (J3) 8M X 16 flash 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata flash memory
Strata flash memory / 256 Mbit

File Size 567.77K  /  72 Page

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    K9F1608W0A- K9F1608W0A-TCB0 K9F1608W0A-TIB0 K9F1G08D0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1608W0A- K9F1608W0A-TCB0 K9F1608W0A-TIB0 K9F1G08D0M
Description -2M x 8 Bit NAND flash memory
128m x 8 Bit / 64M x 16 Bit NAND flash memory

File Size 440.97K  /  25 Page

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    Samsung Semiconductor Co., Ltd.
Part No. K9K1G16U0A
Description 128m x 8 Bit / 64M x 16 Bit NAND flash memory 128m的8 64米16位NAND闪存

File Size 915.60K  /  43 Page

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    Samsung Electronic
Part No. K9K2G0816QU0M
Description 256M x 8 Bit / 128m x 16 Bit NAND flash memory Data Sheet

File Size 833.94K  /  35 Page

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    MB84VP2449 MB84VP24491HK MB84VP24491HK-70PBS

Fujitsu Media Devices Limited
Part No. MB84VP2449 MB84VP24491HK MB84VP24491HK-70PBS
Description 128m (x16) flash memory 32m (x16) Mobile FCRAMTM

File Size 404.17K  /  70 Page

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