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  12a 500v Datasheet PDF File

For 12a 500v Found Datasheets File :: 436    Search Time::1ms    
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    IRFP32N50K IRFP32N50 IRFP32N50KPBF

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFP32N50K IRFP32N50 IRFP32N50KPBF
OCR Text ...nction Temperature ( C) Fig 12a. Maximum Avalanche Energy Vs. Drain Current tp V (B R )D SS IAS Fig 12d. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K 12V .2F .3F QG VGS D.U.T. + V - DS ...
Description 500v Single N-Channel HEXFET Power MOSFET in a TO-247AC package
From old datasheet system
HEXFET? Power MOSFET
Power MOSFET(Vdss=500v, Rds(on)typ.=0.135ohm, Id=32A) 功率MOSFET(减振钢板基本\u003d 500v及的Rdson)典\u003d 0.135ohm,身份证\u003d 32A条)

File Size 92.81K  /  8 Page

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    IRG4BC30KD IRG4BC30KDPBF

International Rectifier, Corp.
Part No. IRG4BC30KD IRG4BC30KDPBF
OCR Text ... 0V, VCE = 600V, TJ = 150C IC = 12a See Fig. 13 IC = 12a, TJ = 150C VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise spec...500v 58 -- TJ = 150C, See Fig. 11,14 42 -- IC = 16A, VCC = 480V ns 210 -- VGE = 15V, RG = 23 160 -- ...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 600V电压的Vce(on)典\u003d 2.21V,@和VGE \u003d 15V的,集成电路\u003d 16A条)
600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package

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    CPV363M4K

IRF[International Rectifier]
Part No. CPV363M4K
OCR Text ... 3.0 6.0 --- S VCE = 100V, IC = 12a gfe Zero Gate Voltage Collector Current --- --- 250 A VGE = 0V, VCE = 600V ICES --- --- 2500 VGE = 0V, V...500v --- TJ = 150C, See Fig.10, 11, 18 --- ns IC = 6.0A, VCC = 480V --- VGE = 15V, RG = 23 --- Energ...
Description IGBT IGBT SIP MODULE Short Circuit Rated UltraFast

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    IRFPS37N50A IRFPS37N50

IRF[International Rectifier]
Part No. IRFPS37N50A IRFPS37N50
OCR Text ...D A 1500 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 1000 500 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) IAS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximu...
Description Power MOSFET(Vdss=500v, Rds(on)max=0.13ohm, Id=36A)
HEXFET? Power MOSFET

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    IRF430

International Rectifier, Corp.
Part No. IRF430
OCR Text ... 10V 20V tp 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. Drain Cur...500v, TJ 150C Suggested RG =7.5 Pulse width 300 s; Duty Cycle 2% Case Outline and Dimensions...
Description TRANSISTORS N-CHANNEL(Vdss=500v, Rds(on)=1.5ohm, Id=4.5A) 三极管N -通道(减振钢板基本\u003d 500v及的Rds(on)\u003d 1.5ohm,身份证\u003d 4.5A
TRANSISTORS N-CHANNEL(Vdss=500v/ Rds(on)=1.5ohm/ Id=4.5A)

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    NTE2399 NTE2395

NTE[NTE Electronics]
Part No. NTE2399 NTE2395
OCR Text .... . . . . . . . . . . . . . . . 12a Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...500v, ID = 3.1A, RG = 12, RD = 170, Note 4 - - - - Between lead, .250in. (6.0) mm from package and ...
Description MOSFET N-Ch, Enhancement Mode High Speed Switch

File Size 27.34K  /  3 Page

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    IRF450 JANTXV2N6770 JANTX2N6770 IRF450PBF

IRF[International Rectifier]
Part No. IRF450 JANTXV2N6770 JANTX2N6770 IRF450PBF
OCR Text ...450 BVDSS 500v RDS(on) 0.400 ID 12a IRF450 JANTX2N6770 JANTXV2N6770 500v, N-CHANNEL The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processi...
Description 500v Single N-Channel Hi-Rel MOSFET in a TO-204AA package
TRANSISTORS N-CHANNEL(Vdss=500v, Rds(on)=0.400ohm, Id=12a)
HEXFET? TRANSISTOR
TRANSISTORS N-CHANNEL(Vdss=500v/ Rds(on)=0.400ohm/ Id=12a)
12 A, 500 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

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    IRFB18N50K

IRF[International Rectifier]
Part No. IRFB18N50K
OCR Text ...nction Temperature ( C) Fig 12a. Maximum Avalanche Energy Vs. Drain Current tp V (B R )D SS IAS Fig 12d. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K 12V .2F .3F QG VGS D.U.T. + V - DS ...
Description 500v Single N-Channel HEXFET Power MOSFET in a TO-220AB package
HEXFET? Power MOSFET
Power MOSFET(Vdss=500v, Rds(on)max=0.26ohm, Id=27A)

File Size 82.60K  /  8 Page

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    IRFMA450 IRFMA540

IRF[International Rectifier]
Part No. IRFMA450 IRFMA540
OCR Text ...MA450 RDS(on) 0.415 ID 12a HEXFET(R) MOSFET technology is the key to International Rectifier's advanced line of power MOSFET tra...500v, TJ 150C Case Outline and Dimensions --Tabless TO-254AA 0.13 [.005] A 13.84 [.545] 13.59 [...
Description 500v Single N-Channel Hi-Rel MOSFET in a TO-254AA package
POWER MOSFET THRU-HOLE (Tabless TO-254AA)

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    IRFP31N50L

International Rectifier, Corp.
Part No. IRFP31N50L
OCR Text ...RG = 25, IAS = 31A (See Figure 12a). ISD = 31A, di/dt 422A/s, VDD V(BR)DSS, TJ 150C. 2 www.irf.com IRFP31N50L 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V...
Description Power MOSFET(Vdss=500v, Rds(on)typ.=0.15ohm, Id=31A) 功率MOSFET(减振钢板基本\u003d 500v及的Rdson)典\u003d 0.15ohm,身份证\u003d 31A条)
HEXFET? Power MOSFET

File Size 93.16K  /  8 Page

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