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				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC M368L6523BUN-LB3 M381L6523BUM-LCC M381L6523BTM-LB3 M381L6523BTM-LCC M368L2923BTN-CB3 M381L2923BTM-LB3 M368L3324BTM-CB3 M368L2923BTN-LB3 M381L6523BTM-CB3 M368L3324BUM-CB3 M368L3324BTM-LB3 M368L6523BTN-CB3 M381L2923BTM-CB3 M381L2923BUM-CB3 M381L2923BUM-LB3 M381L6523BUM-CB3 M368L2923BUM-CCC M368L2923BUM-LCC M368L2923BTM-CCC M381L2923BTM-LCC M368L2923BTM-LCC M368L2923BUN-CB3 M368L6523BUN-CB3 M368L6523BUM-CCC M381L2923BUM-CCC M381L6523BTM-CCC
OCR Text	1gb unbuffered dimm rev. 1.1 june 2005 information in this document is provided in relation to samsung products, and is subject to change without notice. nothing in this document shall be construed as granting any license, express or im...
Description	64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL Single-Supply Voltage Translator 6-SOT-23 -40 to 85
File Size	454.45K / 25 Page	View it Online	Download Datasheet

				http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	M368L6523DUS-LB3 M381L6523DUM-LCC M381L6523DUM-LB3 M368L2923DUN-LB3 M368L2923DUN-LCC M368L3324DUS-CCC M381L2923DUM-LB3 M381L2923DUM-CCC M368L6523DUS-CCC M368L2923DUN-CB3 M381L6523DUM-CB3 M381L6523DUM-CCC M368L2923DUN-CCC
OCR Text	1gb unbuffered dimm rev. 0.1 june 2005 information in this document is provided in relation to samsung products, and is subject to change without notice. nothing in this document shall be construed as granting any license, express or im...
Description	DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模84pin缓冲模块的发展为本的512Mb芯片4/72-bit非ECC /有铅ECC6 TSOP-II免费（符合RoHS
File Size	454.07K / 25 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	HYS72T64000HU-37-A HYS64T64000HU-37-A HYS72T64000HU-5-A HYS64T128020GU HYS64T128020GU-37-A HYS64T128020GU-5-A HYS64T128020HU HYS64T128020HU-37-A HYS64T128020HU-5-A HYS64T32000GU HYS64T32000GU-37-A HYS64T32000GU-5-A HYS64T32000HU HYS64T32000HU-37-A HYS64T32000HU-5-A HYS64T64000GU HYS64T64000GU-37-A HYS64T64000GU-5-A HYS64T64000HU HYS64T64000HU-5-A HYS72T128020GU HYS72T128020GU-37-A HYS72T128020GU-5-A HYS72T128020HU HYS72T128020HU-37-A HYS72T128020HU-5-A HYS72T64000GU HYS72T64000GU-37-A HYS72T64000GU-5-A HYS72T64000HU
OCR Text	... 512MB 1Rx8 PC2-3200E-333-11-A0 1GB 2Rx8 PC2-3200U-333-11-B0 1GB 2Rx8 PC2-3200E-333-11-B0 1 Rank, Non-ECC 1 Rank, Non-ECC 1 Rank, ECC 2 Ranks, Non-ECC 2 Ranks, ECC HYS64T32000HU-5-A HYS64T64000HU-5-A HYS72T64000HU-5-A HYS64T128020HU-5...
Description	240-Pin Unbuffered DDR2 SDRAM Modules
File Size	879.88K / 67 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	M381L6523CUM-CLCC M381L2923CUM-CCC M368L2923CUN-CLCC M368L3324CUS-CLCC M368L6523CUS-CCC
OCR Text	1gb unbuffered dimm rev. 1.0 february. 2005 ddr sdram unbuffered module 184pin unbuffered module based on 512mb c-die with 64/72-bit ecc/non ecc 66 tsop-ii with pb-free revision 1.0 february. 2005 (rohs compliant) ddr sdram 256mb, 51...
Description	DDR SDRAM Unbuffered Module DDR SDRAM的缓冲模
File Size	445.54K / 25 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc.
Part No.	HMP512U6FFP8C-S6 HMP512U7FFP8C-Y5 HMP512U6FFP8C-Y5 HMP512U7FFP8C-S5 HMP564U7FFP8C-S5 HMP564U7FFP8C-Y5
OCR Text	...ials ecc hmp512u6ffp8c-y5/s5/s6 1gb 128mx64 16 2 lead free none hmp564u7ffp8c-y5/s5/s6 512mb 64mx72 9 1 lead free ecc hmp512u7ffp8c-y5/s5/s6 1gb 128mx72 18 2 lead free ecc ? jedec standard double data rate2 synchro- nous drams (ddr2 sdrams)...
Description	240pin DDR2 SDRAM Unbuffered DIMMs based on 512 Mb F ver. DDR DRAM MODULE, DMA240 ROHS COMPLIANT, DIMM-240
File Size	437.70K / 25 Page	View it Online	Download Datasheet

				Hanbit Electronics Co.,Ltd. Hanbit Electronics Co., Ltd.
Part No.	HFDOM40MRXXX DOM40MR032
OCR Text	...28, 192, 256, 512 mb and up to 1gb mb formatted 40pin type . by optimizing flash memory management, the life of this hfdom40mrxxx series can be extended to its maximum level. because the ecc function is included, the correctness of data ...
Description	40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式3.3 / 5.0V工作
File Size	121.56K / 16 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	M378T2953BG0-CC M378T2953BG0-CD5_CC M378T3354BG M391T6553BG0-CD5_CC M378T3354BG0-CC M378T3354BG0-CD5_CC M378T6553BG0-CC M378T6553BG0-CD5_CC M391T2953BG0-CC M391T2953BG0-CD5_CC M391T6553BG0-CC M378T2953BG0-CD5/CC M378T3354BG0-CD5/CC M391T2953BG0-CD5/CC M378T6553BG0-CD5/CC M391T6553BG0-CD5/CC
OCR Text	1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC Revision 1.2 January 2005 Rev. 1.2 Jan. 2005 256MB,512MB,1GB Unbuffered DIMMs DDR2 Unbuffered ...
Description	DDR2 Unbuffered SDRAM MODULE
File Size	364.50K / 23 Page	View it Online	Download Datasheet

				White Electronic Designs Corporation
Part No.	WEDPN16M64V-B100B2C WEDPN16M64V-B100B2I WEDPN16M64V-B100B2M WEDPN16M64V-100B2I WEDPN16M64V-125B2C WEDPN16M64V-125B2I WEDPN16M64V-133B2C WEDPN16M64V-133B2M WEDPN16M64V-125B2M WEDPN16M64V-133B2I WEDPN16M64V-100B2C WEDPN16M64V-100B2M WEDPN16M64V-XB2X
OCR Text	...ERAL DESCRIPTION The 128MByte (1Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of the chip'...
Description	16MX64 SYNCHRONOUS DRAM
File Size	450.05K / 15 Page	View it Online	Download Datasheet

				White Electronic Designs Corporation
Part No.	WEDPN16M64VR-B100B2C WEDPN16M64VR-B100B2M WEDPN16M64VR-100B2C WEDPN16M64VR-100B2M WEDPN16M64VR-125B2I WEDPN16M64VR-133B2M WEDPN16M64VR-XB2X WEDPN16M64VR-125B2M WEDPN16M64VR-133B2C WEDPN16M64VR-125B2C WEDPN16M64VR-133B2I WEDPN16M64VR-100B2I
OCR Text	...ERAL DESCRIPTION The 128MByte (1Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of the chip'...
Description	16MX64 REGISTERED SYNCHRONOUS DRAM
File Size	330.63K / 15 Page	View it Online	Download Datasheet

				White Electronic Designs Corporation
Part No.	WEDPN16M72V-B100B2C WEDPN16M72V-133B2I WEDPN16M72V-XB2X WEDPN16M72V-100B2C WEDPN16M72V-125B2I WEDPN16M72V-125B2M WEDPN16M72V-133B2C WEDPN16M72V-100B2M WEDPN16M72V-125B2C WEDPN16M72V-133B2M WEDPN16M72V-100B2I
OCR Text	...ERAL DESCRIPTION The 128MByte (1Gb) SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of the chip'...
Description	16MX72 SYNCHRONOUS DRAM
File Size	326.68K / 14 Page	View it Online	Download Datasheet

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