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  2 5v 1m x 18 flowthrough burst Datasheet PDF File

For 2 5v 1m x 18 flowthrough burst Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    CY7C1514KV18 CY7C1514KV18-300BZXC CY7C1512KV18-300BZXC CY7C1512KV18-300BZC CY7C1514KV18-300BZC CY7C1514KV18-250BZC CY7C1

Cypress Semiconductor, Corp.
Part No. CY7C1514KV18 CY7C1514KV18-300BZxC CY7C1512KV18-300BZxC CY7C1512KV18-300BZC CY7C1514KV18-300BZC CY7C1514KV18-250BZC CY7C1514KV18-250BZI CY7C1514KV18-250BZxC CY7C1514KV18-333BZC CY7C1514KV18-333BZI CY7C1514KV18-333BZxC CY7C1514KV18-333BZxI CY7C1514KV18-250BZxI CY7C1525KV18 CY7C1512KV18-350BZC
Description 72-Mbit QDR II SRAM 2-Word burst Architecture Two-word burst on all accesses
72-Mbit QDR(TM)-II SRAM 2-Word burst Architecture; Architecture: QDR-II, 2 Word burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M x 36 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDR(TM)-II SRAM 2-Word burst Architecture; Architecture: QDR-II, 2 Word burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M x 18 QDR SRAM, 0.45 ns, PBGA165

File Size 603.26K  /  33 Page

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    GS88218AB-150I GS88218AD-250 GS88218AB-250 GS88218AB-250I GS88218AB-200 GS88218AB-200I GS88218AB-225 GS88218AB-225I GS88

GSI[GSI Technology]
Part No. GS88218AB-150I GS88218AD-250 GS88218AB-250 GS88218AB-250I GS88218AB-200 GS88218AB-200I GS88218AB-225 GS88218AB-225I GS88236AD-250I GS88218AB GS88218AB-133 GS88218AB-133I GS88218AB-150 GS88218AB-166 GS88218AB-166I GS88218AD-133 GS88218AD-133I GS88218AD-150 GS88218AD-150I GS88218AD-166 GS88218AD-166I GS88218AD-200 GS88218AD-200I GS88218AD-225 GS88218AD-225I GS88218AD-250I GS88236AB-133 GS88236AB-133I GS88236AB-150 GS88236AB-150I GS88236AB-166 GS88236AB-166I GS88236AB-200 GS88236AB-200I GS88236AB-225 GS88236AB-225I GS88236AB-250 GS88236AB-250I GS88236AD-133 GS88236AD-133I GS88236AD-150 GS88236AD-150I GS88236AD-166 GS88236AD-166I GS88236AD-200 GS88236AD-200I GS88236AD-225 GS88236AD-225I GS88236AD-250 GS88218A GS88236A
Description 9Mb burst SRAMs
512K x 18, 256K x 36 9Mb SCD/DCD Sync burst SRAMs

File Size 730.62K  /  38 Page

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    GSI[GSI Technology]
Part No. GS88236BD-333I GS88218 GS88218BB-150 GS88218BB-150I GS88218BB-200 GS88218BB-200I GS88218BB-250 GS88218BB-250I GS88218BB-300 GS88218BB-3005I GS88218BB-333 GS88218BB-333I GS88218BD-150 GS88218BD-150I GS88218BD-200 GS88218BD-200I GS88218BD-250 GS88218BD-250I GS88218BD-300 GS88218BD-300I GS88218BD-333 GS88218BD-333I GS88236BB-150 GS88236BB-150I GS88236BB-200 GS88236BB-200I GS88236BB-250 GS88236BB-250I GS88236BB-300 GS88236BB-300I GS88236BB-333 GS88236BB-333I GS88236BD-150 GS88236BD-150I GS88236BD-200 GS88236BD-200I GS88236BD-250 GS88236BD-250I GS88236BD-300 GS88236BD-300I GS88236BD-333 GS88236B GS88218B
Description 9Mb burst SRAMs
512K x 18, 256K x 36 9Mb SCD/DCD Sync burst SRAMs

File Size 719.51K  /  37 Page

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    Analog Devices, Inc.
Part No. CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J-TE13 CAT64LC10ZS-TE13 CAT64LC10ZSI-TE13
Description 18-Mbit QDR™-II SRAM 4-Word burst Architecture
18-Mbit DDR-II SRAM 2-Word burst Architecture
36-Mbit DDR-II SRAM 2-Word burst Architecture (2.5 Cycle Read Latency)
4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM
SPI Serial EEPROM SPI串行EEPROM

File Size 494.12K  /  9 Page

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    STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
Part No. M36P0R9070E0ZACF M36P0R9070E0 M36P0R9070E0ZAC M36P0R9070E0ZACE
Description 512 Mbit (x16, Multiple Bank, Multi-Level, burst) Flash Memory 128 Mbit (burst) PSRAM, 1.8V Supply, Multi-Chip Package 512兆位(x16插槽,多银行,多层次,多突发28兆位闪存(突发)移动存储芯片.8V电源,多芯片封装

File Size 139.92K  /  26 Page

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    EDI2CG272128V9D1 EDI2CG272128V12D1 EDI2CG272128V15D1 EDI2CG272128V85D1 EDI2CG272128V-D1

White Electronic Designs Corporation
Part No. EDI2CG272128V9D1 EDI2CG272128V12D1 EDI2CG272128V15D1 EDI2CG272128V85D1 EDI2CG272128V-D1
Description 2x128Kx72, 3.3V S nc/S nc burst Flow-Through(2x128Kx72, 3.3Vns,同步/同步脉冲静态RAM模块(流通结构))
2x128Kx72, 3.3V S nc/S nc burst Flow-Through(2x128Kx72, 3.3V2ns,同步/同步脉冲静态RAM模块(流通结构))
2x128Kx72, 3.3V S nc/S nc burst Flow-Through(2x128Kx72, 3.3V5ns,同步/同步脉冲静态RAM模块(流通结构))
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏,15纳秒,同同步脉冲静态内存模块(流通结构)
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏,12ns,同同步脉冲静态内存模块(流通结构)
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏,纳秒,同同步脉冲静态内存模块(流通结构)
SSRAM Modules 的SSRAM模块
2x128Kx72, 3.3V Sync/Sync burst Flow-Through(2x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72.3同步/同步突发流量通过2x128Kx72.3伏,8.5ns,同同步脉冲静态内存模块(流通结构)
2x128Kx72, 3.3V Sync/Sync burst Flow-Through(2x128Kx72, 3.3V锛?.5ns,???/?????????RAM妯″?(娴??缁??锛?

File Size 172.76K  /  11 Page

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    GS88136BD-200I GS88136BD-133I GS88136BD-150 GS88136BD-166

GSI Technology
Part No. GS88136BD-200I GS88136BD-133I GS88136BD-150 GS88136BD-166
Description 200MHz 6.5ns 256K x 36 9Mb sync burst SRAM
133MHz 8.5ns 256K x 36 9Mb sync burst SRAM
150MHz 7.5ns 256K x 36 9Mb sync burst SRAM
166MHz 7ns 256K x 36 9Mb sync burst SRAM

File Size 695.22K  /  34 Page

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    EDI2DL32256V EDI2DL32256V35BC EDI2DL32256V40BC EDI2DL32256V40BI EDI2DL32256V38BC EDI2DL32256V-BC

WEDC[White Electronic Designs Corporation]
Part No. EDI2DL32256V EDI2DL32256V35BC EDI2DL32256V40BC EDI2DL32256V40BI EDI2DL32256V38BC EDI2DL32256V-BC
Description TMS320C6202. TMS320C6203. TMS320C6204. TMS320C6 Families
x32 Fast Synchronous SRAM
256Kx32 Synchronous Pipline burst SRAM 3.3V(3.3V,4.0ns,256Kx32同步流水线脉冲静态RAM)
256Kx32 Synchronous Pipline burst SRAM 3.3V(3.3V,3.5ns,256Kx32同步流水线脉冲静态RAM)
256Kx32 Synchronous Pipline burst SRAM 3.3V(3.3V,3.8ns,256Kx32同步流水线脉冲静态RAM)

File Size 94.58K  /  8 Page

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    Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
Part No. CY7C1415BV18-250BZI CY7C1415BV18-167BZI
Description 36-Mbit QDR(TM)-II SRAM 4-Word burst Architecture; Architecture: QDR-II, 4 Word burst; Density: 36 Mb; Organization: 1mb x 36; Vcc (V): 1.7 to 1.9 V 1m x 36 QDR SRAM, 0.45 ns, PBGA165
36-Mbit QDR&#153;-II SRAM 4-Word burst Architecture

File Size 956.33K  /  30 Page

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    GS832218B-133 GS832218B-133I GS832218B-150 GS832218B-150I GS832218B-166 GS832218B-166I GS832218B-200 GS832218B-200I GS83

ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
Part No. GS832218B-133 GS832218B-133I GS832218B-150 GS832218B-150I GS832218B-166 GS832218B-166I GS832218B-200 GS832218B-200I GS832218B-225 GS832218B-225I GS832218B-250 GS832218B-250I GS832272C-133 GS832272C-133I GS832272C-150 GS832272C-150I GS832272C-166 GS832272C-166I GS832272C-200 GS832272C-200I GS832272C-225 GS832272C-225I GS832218 GS832218B GS832218E GS832218E-133 GS832218E-133I GS832218E-150 GS832218E-150I GS832218E-166 GS832218E-166I GS832218E-200 GS832218E-225 GS832218E-225I GS832218E-250 GS832218E-250I GS832236 GS832236B GS832236B-133 GS832236E-133 GS832236E-133I GS832236E-150 GS832236E-150I GS832236E-166 GS832236E-166I GS832236E-200 GS832236E-200I GS832236E-225 GS832236E-225I GS832236E-250 GS832236E-250I GS832236B-250 GS832236B-200 GS832236B-133I GS832236B-166 GS832236B-225 GS832236B-150 GS832236B-200I GS832236B-225I GS832236B-150I GS832236B-166I GS832236B-250I GS832272 GS832272C-250 GS832272C-250I
Description 64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1m x 36, 512K x 72 36Mb S/DCD Sync burst SRAMs 200万18100万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1m x 36, 512K x 72 36Mb S/DCD Sync burst SRAMs 200万1800万36,为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1m x 36, 512K x 72 36Mb S/DCD Sync burst SRAMs 200万1800万36,为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync burst SRAMs

File Size 833.90K  /  41 Page

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