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  2280 Datasheet PDF File

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    IRF36 IRF-36

VISAY[Vishay Siliconix]
Part No. IRF36 IRF-36
OCR Text ...0 70 65 65 65 60 60 55 55 50 25.2 25.2 25.2 25.2 25.2 25.2 25.2 25.2 25.2 25.2 25.2 25.2 25.2 7.96 7.96 7.96 7.96 7.96 7.96 7.96 7.96 7.96 7...280 250 230 210 172 140 140 131 121 110 100 94 86 80 74 68 53 45 34 20 14 9.9 7.6 6.3 6.3 6.3 6.2 5....
Description Inductors Epoxy Conformal Coated, Axial Leaded

File Size 113.79K  /  1 Page

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    IRF3703 IRF3703PBF

International Rectifier
Part No. IRF3703 IRF3703PBF
OCR Text ...ed VDSS 30V RDS(on) max 2.8m ID 210A TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC...280 320 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capaci...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)

File Size 93.04K  /  8 Page

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    IRF3706 IRF3706L IRF3706S

IRF[International Rectifier]
Part No. IRF3706 IRF3706L IRF3706S
OCR Text ...S = 4.5V, ID = 28A 11 22 VGS = 2.8V, ID = 18A --- 2.0 V VDS = VGS, ID = 250A --- 20 VDS = 16V, VGS = 0V A --- 100 VDS = 16V, VGS = 0V, TJ ...280 V ns nC ns nC VSD trr Q rr trr Q rr 0.88 1.3 0.82 --- 45 68 65 98 49 74 78 120 Conditio...
Description Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)

File Size 143.52K  /  11 Page

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ...eakage --- Typ. --- 0.022 4.7 6.2 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, I D = 250A --- V/C Reference to 25C, ID = 1mA 6....280 Max. Units Conditions --- S VDS = 16V, ID = 30A 44 ID = 15A --- nC VDS = 10V --- VGS = 4.5V --- ...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...istance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF5305L) is available for lowprofile...280 -16 11 -5.8 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal ...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...apacitance Min. -55 --- --- -2.0 8.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.034 --- --- --- --- --- --- --- --- --- --- 14 66 39 63 4.5 7.5 1200 520 250 Max. Units Conditions --- V VGS = 0V, ID ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text ... N-Ch VDSS 20V P-Ch -20V 2 7 3 6 4 5 RDS(on) 0.125 0.20 ID 3.0A -2.5A P-CHANNEL MOSFET Top View SO-8 Ab...280 -- 260 -- 250 -- 62 -- 86 -- Units V V/C V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

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    IRF9140

SEMELAB LTD
SEME-LAB[Seme LAB]
Part No. IRF9140
OCR Text ... 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 -100V -18A 0.2 * SIMPLE DRIVE REQUIREMENTS * SCREENING OPTIONS AVAILABLE 1.09 (0.043)...280 3.6 V / C V S (E) A nA -2 6.2 pF nC ns SOURCE - DRAIN DIODE CHARACTERISTICS C...
Description P-CHANNEL POWER MOSFET

File Size 21.26K  /  2 Page

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    IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR

IRF[International Rectifier]
Part No. IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text ...istance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z34L) is available for lowprofile...280 520 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

File Size 330.76K  /  10 Page

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    IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR

IRF[International Rectifier]
Part No. IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text ...istance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z34NL) is available for lowprofil...280 140 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.10...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 158.36K  /  10 Page

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