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CPDF5V0 020180 F472M SC413 2N1649 DM74L PT10728 A1104
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    IRF140SMD

International Rectifier
Seme LAB
Part No. IRF140SMD
OCR Text ... 1 0.13 0.077 0.125 2 9.1 25 250 100 -100 1660 550 120 4 V / C W V S(W )W( VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Forward Transconductance ...
Description N-CHANNEL POWER MOSFET

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    IRF150SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF150SMD
OCR Text ...A 1 0.13 0.070 0.081 2 9 25 250 100 -100 3700 1100 200 4 V / C W V S(W )W( VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Forward Transconductance ...
Description N-CHANNEL POWER MOSFET

File Size 22.29K  /  2 Page

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    IRF1607

International Rectifier
Part No. IRF1607
OCR Text ...-- 20 VDS = 75V, VGS = 0V A --- 250 VDS = 60V, VGS = 0V, TJ = 150C --- 200 VGS = 20V nA --- -200 VGS = -20V 210 320 ID = 85A 45 68 nC VDS = ...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 ...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)

File Size 179.50K  /  9 Page

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    IRF1704

International Rectifier
Part No. IRF1704
OCR Text ...= 100A 20 VDS = 40V, VGS = 0V A 250 VDS = 32V, VGS = 0V, TJ = 175C 200 VGS = 20V nA -200 VGS = -20V 260 ID = 100A 63 nC VDS = 32V 59 VGS = 1...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 ...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)
POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)

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    IRF2204

International Rectifier
Part No. IRF2204
OCR Text ...= 130A 20 VDS = 40V, VGS = 0V A 250 VDS = 32V, VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V 200 ID = 130A 52 nC VDS = 32V 59 VGS = 1...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 ...
Description 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 138.67K  /  9 Page

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    IRF240SMD

SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
Part No. IRF240SMD
OCR Text ...S ID = 13.9A 1 0.29 0.180 0.250 2 6.1 25 250 100 -100 1300 400 130 4 V / C W V S(W )W( VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Forward Trans...
Description    N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))

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    IRF250SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF250SMD
OCR Text ...A 1 0.29 0.100 0.105 2 9 25 250 100 -100 3500 700 110 4 V / C W V S(W )W( VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Forward Transconductance ...
Description N.CHANNEL POWER MOSFET

File Size 23.37K  /  2 Page

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    IRF2804S-7P

IRF[International Rectifier]
Part No. IRF2804S-7P
OCR Text ...570 2340 --- --- 1.6 4.0 --- 20 250 200 -200 260 --- --- --- --- --- --- --- --- --- --- --- --- --- --- pF nH ns nC nA V m V S A Conditi...sec) 0.1951 0.000743 0.3050 0.008219 1 0.001 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RES...
Description AUTOMOTIVE MOSFET

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    IRF2804 IRF2804L IRF2804S

IRF[International Rectifier]
Part No. IRF2804 IRF2804L IRF2804S
OCR Text ...2210 --- --- 2.0 2.3 4.0 --- 20 250 200 -200 240 62 99 --- --- --- --- --- --- --- --- --- --- --- --- pF nH ns nC nA V S A V m Condition...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 ...
Description 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 273.77K  /  12 Page

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    IRF2805L IRF2805S

IRF[International Rectifier]
Part No. IRF2805L IRF2805S
OCR Text ...= 104A 20 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V 230 ID = 104A 57 nC VDS = 44V 78 VGS = 1...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 ...
Description 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 221.43K  /  11 Page

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