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  3.0v 1.8v Datasheet PDF File

For 3.0v 1.8v Found Datasheets File :: 48111    Search Time::3.203ms    
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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...x. 1.4 --- 62 Units C/W 3/3/00 IRF5305 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ...0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.06 VGS = -10V, ID = -16A -4.0 V VDS = V GS, I...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF7811AV IRF7811AVTR

International Rectifier
Part No. IRF7811AV IRF7811AVTR
OCR Text ...pical PCB mount application. 3 6 4 5 SO-8 T o p V ie w DEVICE CHARACTERISTICS IRF7811AV RDS(on) QG Qsw Qoss 11m 17nC 6....0V, ID = 250A VGS = 4.5V, ID = 15A VDS = VGS,I D = 250A VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, Tj = ...
Description Si, SMALL SIGNAL, FET, MS-012AA
N-Channel Application-Specific MOSFETs

File Size 85.36K  /  6 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text 3 -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanc...0V, (Figure 10) VGS = VDS, ID = -250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V ...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    IRF9520 FN2281

INTERSIL[Intersil Corporation]
Part No. IRF9520 FN2281
OCR Text 3 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified le...0V (Figure 10) VGS = VDS, ID = -250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V T...
Description 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET

File Size 57.36K  /  7 Page

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    IRF9540 RF1S9540SM FN2282

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRF9540 RF1S9540SM FN2282
OCR Text .... ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....0V (Figure 10) VGS = VDS, ID = -250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, ...
Description 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system

File Size 59.17K  /  7 Page

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    IRF9620 FN2283

INTERSIL[Intersil Corporation]
Part No. IRF9620 FN2283
OCR Text 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced pow...0V, (Figure 10) VGS = VDS, ID = -250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V,...
Description 3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET
3.5A 200V 1.500 Ohm P-Channel Power MOSFET
From old datasheet system

File Size 57.96K  /  7 Page

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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ... Typ. --- 0.50 --- Max. 3.3 --- 62 Units C/W 8/27/97 IRF9Z24N Electrical Characteristics @ TJ = 25C (unless otherwise spe...0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 0.175 VGS = -10V, I D = -7.2A -4.0 V VDS = VGS...
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

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    K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text ...graph for 1.8v device (Page 36) 3. Add the data protection Vcc guidence for 1.8v device - below about 1.1V. (Page 37) 4. Add the specificati...0V/VCC -->> CE=VIH, WP=LOCKPRE=0V/VCC ISB2: CE=VCC-0.2, WP=0V/VCC -->> CE=VCC-0.2, WP=LOCKPRE=0V/VCC...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8v NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 679.73K  /  42 Page

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    L4973V3 L4973V3.3 L4973V3.3-L4973V5.1 L4973V33 L4973V33-L4973V51 L4973D3 L4973D3.3 L4973D3.3-L4973D5.1 L4973D33 L4973D33

STMicroelectronics N.V.
意法半导
ST Microelectronics
Part No. L4973V3 L4973V3.3 L4973V3.3-L4973V5.1 L4973V33 L4973V33-L4973V51 L4973D3 L4973D3.3 L4973D3.3-L4973D5.1 L4973D33 L4973D33-L4973D51 L4973D5 L4973D5.1 L4973D51 LV4973D L4973 L4973V5.1 L4973V51 -L4973D33-L4973D51
OCR Text 3 - L4973V5.1 L4973D3.3 - L4973D5.1 3.5A STEP DOWN SWITCHING REGULATOR UPTO 3.5ASTEP DOWNCONVERTER OPERATING INPUT VOLTAGE FROM 8V TO 55...0V TO 50V (3.3V type) 5.1V TO 50V (5.1 type) FREQUENCY ADJUSTABLE UP TO 300KHz VOLTAGE FEED FORWARD ...
Description RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效,5安培开关稳压器
3.5A STEP DOWN SWITCHING REGULATOR

File Size 221.38K  /  16 Page

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For 3.0v 1.8v Found Datasheets File :: 48111    Search Time::3.203ms    
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