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  32m x 8 banks x 8 bit ddr2 sdr Datasheet PDF File

For 32m x 8 banks x 8 bit ddr2 sdr Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S641632C-TC_L75 K4S641632C-TC/L10 K4S641632C-TC/L1H K4S641632C-TC/L1L K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S641632C-TC_L75 K4S641632C-TC/L10 K4S641632C-TC/L1H K4S641632C-TC/L1L K4S641632C-TC/L70 K4S641632C-TC/L80 K4S641632C-TC/L60 K4S641632C-TC/L75 K4S641632C-TL60 K4S641632C-TC80
Description 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16bit x 4 banks Synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz

File Size 1,152.92K  /  42 Page

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    Winbond Electronics Corp
http://
Winbond Electronics, Corp.
Part No. W9864G6GH-5 W9864G6GH-7S W9864G6GH-6 W9864G6GH-6I
Description 1M × 4 banks × 16 bitS sdrAM
1M 4 banks 16 bitS sdrAM 4M x 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO54

File Size 1,182.51K  /  43 Page

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    K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K4R271669B-NCK8 K4R441869B-NCK8 K4R271669B K4R271669B-MCG6 K4R271669B-MCK7 K4R271669B-MCK8 K4R441869B-MCG6 K4R441869B-MCK7 K4R441869B-MCK8 K4R441869B-NCG6 K4R441869B-NCK7 K4R441869B-NMCG6 K4R271869B-MCK8 K4R271869B-NCG6
Description 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.

File Size 304.91K  /  20 Page

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    K4S640832E-TC1H K4S640832E-TC1L K4S640832E-TC75 K4S640832E-TL1H K4S640832E-TL1L K4S640832E-TL75 K4S640832E

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S640832E-TC1H K4S640832E-TC1L K4S640832E-TC75 K4S640832E-TL1H K4S640832E-TL1L K4S640832E-TL75 K4S640832E
Description 64Mbit sdrAM 2M x 8bit x 4 banks Synchronous DRAM LVTTL
2M x 8bit x 4 banks Synchronous DRAM Data Sheet

File Size 125.55K  /  10 Page

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    W981216BH W981216 W981216BH-75 W981216BH-75I W981216BH-75L W981216BH-6

Winbond Electronics Corp
WINBOND[Winbond]
Part No. W981216BH W981216 W981216BH-75 W981216BH-75I W981216BH-75L W981216BH-6
Description 2M x 4 banks x 16 bit sdrAM
Low Power sdrAM
Industrial sdrAM
2M x 4 banks x 16 bit sdrAM
DRAM - Datasheet Reference

File Size 1,313.72K  /  41 Page

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    KM48S8030D KM48S8030DT-GFA KM48S8030DT-GFL KM48S8030DT-GF8

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM48S8030D KM48S8030DT-GFA KM48S8030DT-GFL KM48S8030DT-GF8
Description 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz
64Mbit sdrAM 2M x 8bit x 4 banks Synchronous DRAM LVTTL 64Mbit sdrAM00万8位4银行同步DRAM LVTTL
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz

File Size 116.15K  /  11 Page

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    Infineon
Part No. HYS64T64000GU-3.7-A HYS64T64000GU-5-A HYS64T128020GU-3.7-A HYS64T32000GU-3.7-A HYS72T128020GU-3.7-A HYS72T64000GU-3.7-A HYS64T32000GU-5-A HYS64T128020GU-5-A HYS72T64000GU-5-A HYS72T128020GU-5-A
Description ddr2 sdrAM Modules - 512MB (64Mx64) PC2 4300 4-4-4 1Bank; available 2Q/04
ddr2 sdrAM Modules - 512MB (64Mx64) PC2 3200 3-3-3 1Bank; available 2Q/04
ddr2 sdrAM Modules - 1GB (128Mx64) PC2 4300 4-4-4 2Bank; available 2Q/04
ddr2 sdrAM Modules - 256MB (32mx64) PC2 4300 4-4-4 1Bank; available 2Q/04
ddr2 sdrAM Modules - 1GB (128Mx72) PC2 4300 4-4-4; 2Bank; available 2Q/04
ddr2 sdrAM Modules - 512MB (64Mx72) PC2 4300 4-4-4 1Bank; available 2Q/04
ddr2 sdrAM Modules - 256MB (32mx64) PC2 3200 3-3-3 1Bank; available 2Q/04
ddr2 sdrAM Modules - 1GB (128Mx64) PC2 3200 3-3-3 2Bank; available 2Q/04
ddr2 sdrAM Modules - 512MB (64Mx72) PC2 3200 3-3-3 1Bank; available 2Q/04
ddr2 sdrAM Modules - 1GB (128Mx72) PC2 3200 3-3-3 2Bank; available 2Q/04

File Size 443.83K  /  25 Page

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    EBE52UC8AAFV EBE52UC8AAFV-AE-E EBE52UC8AAFV-BE-E EBE52UC8AAFV-DF-E

ELPIDA MEMORY INC
Part No. EBE52UC8AAFV EBE52UC8AAFV-AE-E EBE52UC8AAFV-BE-E EBE52UC8AAFV-DF-E
Description 512MB Unbuffered ddr2 sdrAM HYPER DIMM垄芒
512MB Unbuffered ddr2 sdrAM HYPER DIMM?/a>
128M x 64 DDR DRAM MODULE, 0.45 ns, DMA240

File Size 191.95K  /  22 Page

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    K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K4S280832C-TL750
Description 16M x 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8bit x 4 banks Synchronous DRAM Data Sheet
128Mbit sdrAM 4M x 8bit x 4 banks Synchronous DRAM LVTTL

File Size 111.80K  /  11 Page

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    http://
Maxwell Technologies, Inc
Part No. 72SD3232RPFE 72SD3232RPFI 72SD3232RPFK 72SD3232RPFH 72SD3232
Description 1 Gbit sdrAM 32-Meg x 32-bit x 4-banks 32m x 32 SYNCHRONOUS DRAM, 6 ns, DFP72
1 Gbit sdrAM 32-Meg x 32-bit x 4-banks 1千兆位sdrAM2梅格× 32位4,银

File Size 597.29K  /  40 Page

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For 32m x 8 banks x 8 bit ddr2 sdr Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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