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| Part No. |
SPB11N60S5 SPB11N60S505
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| OCR Text |
...urn-on delay time t d(on) v dd =350v, v gs =0/10v, i d =11a, r g =6.8 - 130 - ns rise time t r - 35 - turn-off delay time t d(off) - 150 2...ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 3 transient thermal impedance z thjc = f ( t p ) paramete... |
| Description |
New revolutionary high voltage technology Ultra low gate charge
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| File Size |
350.31K /
11 Page |
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it Online |
Download Datasheet
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DBLECTRO[DB Lectro Inc]
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| Part No. |
KAQY210B KAQY210AB
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| OCR Text |
...reakdown Voltage ...............350v Continuous Load Current ...............130mA Power Dissipation ........................500mW
Unit : mm...ms ms
Mos Relay Schematic and Wiring Diagrams
Type Schematic Output configuration Load Connectio... |
| Description |
High Voltage, Photo Mos Relay
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| File Size |
126.15K /
2 Page |
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it Online |
Download Datasheet |
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http://
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| Part No. |
SPB20N60S505
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| OCR Text |
...urn-on delay time t d(on) v dd =350v, v gs =0/10v, i d =20a, r g =5.7 - 120 - ns rise time t r - 25 - turn-off delay time t d(off) - 140 2...ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 3 transient thermal impedance z thjc = f ( t p ) paramete... |
| Description |
Cool MOS Power Transistor
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| File Size |
351.59K /
11 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPN03N60S5
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| OCR Text |
...plateau voltage Qgs Qgd Qg
VDD=350v, ID=0.7 A, VGS=0 to 10V VDD=350v, ID=0.7 A
Symbol
Conditions min.
Values typ. 0.73 440 230 12 ...ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC
20
40
60
80
100
120
C
16... |
| Description |
Cool MOSPower Transistor 酷马鞍山⑩功率晶体管
for lowest Conduction Losses
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor
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| File Size |
224.83K /
9 Page |
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it Online |
Download Datasheet |
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