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STMicroelectronics N.V.
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Part No. |
DIM150CHS17-E
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OCR Text |
...) 2(e2) 6(g 2 ) 7(e 2 ) 5(e 1 ) 4(g 1 )
dim150chs17-e000 2/8 caution: this device is sensitive to electrostatic discharge. users should f...900v, i 1 t p 10 s, v ce(max) = v ces ?l*. di/dt i 2 iec 60747-9 parameter collector cut-of... |
Description |
IGBT Modules - Half Bridge IGBT模块-半桥
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File Size |
145.74K /
8 Page |
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it Online |
Download Datasheet |
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Advanced Power Technology, Ltd.
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Part No. |
APTGT150A170
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OCR Text |
... 350 a t j = 25c 2.0 2.4 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 150a t j = 125c 2.4 v v ge(...900v i c = 150a r g = 4.7 ? 180 ns t d(on) turn-on delay time 400 t r rise time... |
Description |
Phase leg Trench Field Stop IGBT Power Module 相脚戴场站IGBT功率模块
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File Size |
266.30K /
5 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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Part No. |
STP5NC90ZFP STB5NC90ZT4
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OCR Text |
4.6a to-220/fp/d2pak/i2pak zener-protected powermesh?iii mosfet n typical r ds (on) = 2.1 w n extremely high dv/dt and capability gate to - ...900v < 2.5 w 4.6 a stb5nc90z/-1 900v < 2.5 w 4.6 a symbol parameter value unit stp(b)5nc90z(-1) stp5... |
Description |
N-CHANNEL 900V 2.1 OHM 4.6A TO-220 TO-220FP I2PAK D2PAK ZENER-PROTECTED POWERMESH III MOSFET
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File Size |
521.94K /
13 Page |
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it Online |
Download Datasheet |
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Price and Availability
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