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  4.900v Datasheet PDF File

For 4.900v Found Datasheets File :: 1765    Search Time::1ms    
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    STMicroelectronics N.V.
Part No. DIM150CHS17-E
OCR Text ...) 2(e2) 6(g 2 ) 7(e 2 ) 5(e 1 ) 4(g 1 ) dim150chs17-e000 2/8 caution: this device is sensitive to electrostatic discharge. users should f...900v, i 1 t p 10 s, v ce(max) = v ces ?l*. di/dt i 2 iec 60747-9 parameter collector cut-of...
Description IGBT Modules - Half Bridge IGBT模块-半桥

File Size 145.74K  /  8 Page

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    2SK3983-01SJ 2SK3983-01L

Fuji Electric
Part No. 2SK3983-01SJ 2SK3983-01L
OCR Text ...ed drain current i d(puls] 10.4 gate-source voltage v gs 30 repetitive or non-repetitive i ar 2.6 non-repetitive maximum avalanche energy...900v v gs =0v v ds =720v v gs =0v v gs =30v i d =1.3a v gs =10v i d =1.3a v ds =25v v cc =...
Description N-CHANNEL SILICON POWER MOSFET

File Size 232.64K  /  4 Page

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    2SK2224-01R

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2224-01R
OCR Text ...f N-channel MOS-FET 900V 4 3A 50W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), ...
Description N-channel MOS-FET

File Size 174.23K  /  2 Page

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    2SK3981-01

Fuji Electric
Part No. 2SK3981-01
OCR Text ...ed drain current i d(puls] 10.4 gate-source voltage v gs 30 repetitive or non-repetitive i ar 2.6 non-repetitive maximum avalanche energy...900v v gs =0v v ds =720v v gs =0v v gs =30v i d =1.3a v gs =10v i d =1.3a v ds =25v v cc...
Description N-CHANNEL SILICON POWER MOSFET

File Size 219.54K  /  4 Page

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    Advanced Power Technology, Ltd.
Part No. APTGT150A170
OCR Text ... 350 a t j = 25c 2.0 2.4 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 150a t j = 125c 2.4 v v ge(...900v i c = 150a r g = 4.7 ? 180 ns t d(on) turn-on delay time 400 t r rise time...
Description Phase leg Trench Field Stop IGBT Power Module 相脚戴场站IGBT功率模块

File Size 266.30K  /  5 Page

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    APTGT75SK170D1G

Microsemi Corporation
Part No. APTGT75SK170D1G
OCR Text 4 2 1 5 q1 3 4 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter br...900v 0.85 c t d(on) turn-on delay time 280 t r rise time 80 t d(off) turn-o...
Description Buck chopper Trench Field Stop IGBT Power Module

File Size 178.64K  /  4 Page

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    ST Microelectronics
Part No. STP5NC90ZFP STB5NC90ZT4
OCR Text 4.6a to-220/fp/d2pak/i2pak zener-protected powermesh?iii mosfet n typical r ds (on) = 2.1 w n extremely high dv/dt and capability gate to - ...900v < 2.5 w 4.6 a stb5nc90z/-1 900v < 2.5 w 4.6 a symbol parameter value unit stp(b)5nc90z(-1) stp5...
Description N-CHANNEL 900V 2.1 OHM 4.6A TO-220 TO-220FP I2PAK D2PAK ZENER-PROTECTED POWERMESH III MOSFET

File Size 521.94K  /  13 Page

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    APTGT30A170T1G

Microsemi Corporation
Part No. APTGT30A170T1G
OCR Text ... 9 q2 q1 10 12 2 1 7 8 11 3 4 cr1 cr2 56 ntc pins 1/2 ; 3/4 ; 5/6 must be shorted together absolute maximum ratings ...900v i c = 30a r g = 18 ? 80 ns t d(on) turn-on delay time 100 t r rise time ...
Description Phase leg Trench Field Stop IGBT? Power Module

File Size 275.70K  /  5 Page

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    2MBI300VN-170-50

Fuji Electric
Part No. 2MBI300VN-170-50
OCR Text ...ting (*3) - 3.5 n m terminals (*4) - 4.5 note *1: all terminals should be connected together during the test. note *2: two thermistor te...900v i c = 300a v ge = 15v r g = 4.7? l s = 80nh - 900 - nsec t r - 400 - t r (i) - 100 - turn-...
Description IGBT MODULE (V series) 1700V / 300A / 2 in one package

File Size 384.59K  /  6 Page

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    DIM800DCM17-A00011 DIM800DCM17-A000-15

Dynex Semiconductor
Part No. DIM800DCM17-A00011 DIM800DCM17-A000-15
OCR Text 4.2 ds5444 - 5 april 2011 (ln26752) caution: this device is sensitive to electrostatic discharge. users should follow esd hand...900v di f /dt = 4000a/s 250 c i rr diode reverse recovery current 530 a e re...
Description IGBT Chopper Module

File Size 315.74K  /  8 Page

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