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  5.96.4ghz Datasheet PDF File

For 5.96.4ghz Found Datasheets File :: 129    Search Time::1.547ms    
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    TRIQUINT[TriQuint Semiconductor]
Part No. TQP2420G
OCR Text ...put Power 802.11b modulation 5 N/C Product Description: The TQP2420G is a high performance, high linearity, medium-power amplifier de...96.518 0.963 / 89.892 0.948 / 83.512 0.929 / 77.411 0.905 / 71.655 0.877 / 66.344 0.852 / 62.271 fr...
Description 2.4GHz ISM Band InGaP HBT Power Amplifier

File Size 341.38K  /  13 Page

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    HWF1686NC

Hexawave, Inc
Part No. HWF1686NC
OCR Text ...: Gate 3 to 4: Drain 0 .0 0 .0 5 8 .5 3 4 4 .5 400 * mounted on an infinite heat sink Electrical Specifications (TA=25C) Symbol IDS...96.16 -100.26 -104.19 -107.89 -111.59 -115.06 -118.38 -121.59 -124.82 -127.70 -130.55 -133.31 -135.8...
Description L-Band Power FET Non-Via Hole Chip

File Size 104.30K  /  3 Page

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    HWF1686YC

Hexawave, Inc
Part No. HWF1686YC
OCR Text ... -5V IDSS 2mA 175C -65 to +175C 5.4W 0 .0 0 .0 5 8 .5 * mounted on an infinite heat sink Electrical Specifications (TA=25C) Symbol ...96 44.48 42.75 40.58 39.47 38.99 37.41 36.06 35.40 34.21 33.53 32.95 32.08 31.42 30.69 30.10 28.12 2...
Description L-Band Power FET Via Hole Chip

File Size 103.34K  /  3 Page

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    HWL30YRA HWL30YRA-V1-15

Hexawave, Inc
Part No. HWL30YRA HWL30YRA-V1-15
OCR Text ...r Class AB Operation Typical 16.5 dB Gain 5V to 10V Operation Description The HWL30YRA is a Medium Power GaAs FET designed for various L...96.978 -101.966 -107.921 -111.564 -114.434 -117.853 -119.915 -122.220 -124.725 -126.712 -128.530 -13...
Description L-Band GaAs Power FET

File Size 86.01K  /  4 Page

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    HWL30YRF HWL30YRF-V1-15

Hexawave, Inc
Part No. HWL30YRF HWL30YRF-V1-15
OCR Text ...r Class AB Operation Typical 16.5 dB Gain 5V to 10V Operation Outline Dimensions Description The HWL30YRF is a Medium Power GaAs FET ...96.978 -101.966 -107.921 -111.564 -114.434 -117.853 -119.915 -122.220 -124.725 -126.712 -128.530 -13...
Description L-Band GaAs Power FET

File Size 83.50K  /  4 Page

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    SGL-0622Z

SIRENZA MICRODEVICES
Part No. SGL-0622Z
OCR Text ...lly matched and requires only 4-5 external components to achieve 28.5 dB gain at 1.575 GHz and a noise figure of 1.5dB. This RFIC is fabrica...96 12.6 11.8 38.7 0.84 16.0 10.4 39.9 1.16 12.8 12.1 34.8 1.78 Test Conditions: ID = ...
Description 100 - 4000 MHz Low Noise Amplifier Silicon Germanium

File Size 112.99K  /  5 Page

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    CHA3023 CHA3023-99F

United Monolithic Semiconductors
Part No. CHA3023 CHA3023-99F
OCR Text ...die form. 15 10 Gain & RLoss 5 0 -5 -10 -15 -20 1 3 5 7 9 11 13 15 17 19 Frequency (GHz) dBS11 dBS22 dBS21 Main Features Broadband p...96,63 -102,61 -106,89 -110,67 -114,80 -119,10 -124,04 -129,21 -134,92 -140,65 -146,35 -152,20 -157,7...
Description 1-18 GHz WIDE BAND AMPLIFIER

File Size 385.94K  /  8 Page

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    CHA7012

United Monolithic Semiconductors
Part No. CHA7012
OCR Text ...s to biasing circuit Chip size: 5.00 x 3.68 x 0.1mm Pout (dBm @ 3dBc Linear Gain (Pin=0dBm) 24 20 1 6 9 9.2 9.4 9.6 9.8 1 0 1 0...96 x 196m DC pads (2, 3, 4, 5, 9,15, 19, 20, 21, 22) = 96 x 96m DC pads (7, 17) = 192 x 96m DC pads ...
Description X-band HBT High Power Amplifier

File Size 565.46K  /  10 Page

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    CHA7114

United Monolithic Semiconductors
Part No. CHA7114
OCR Text ...25 20 15 Pulse : 25s 10% 10 8 8,5 9 9,5 10 10,5 11 11,5 12 Frequency (GHz) Linear Gain Pout @ 4dBc PAE @ 4dBc Main Features 0.25m Power ...96 m Pin number 2, 9 3, 7, 12, 16 1 4, 6, 13, 15 5, 8, 11, 14 10 Pin name G1, G2 IN Vg1R, Vg2R Vd1, ...
Description X Band High Power Amplifier

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    CHA7010 CHA7010-99F_00 CHA701004

United Monolithic Semiconductors
Part No. CHA7010 CHA7010-99F_00 CHA701004
OCR Text ...2 40 39 -0.01 39 38 35 32 9 2.4 5.1 350 Max 10.4 Unit GHz dB dB dB/C dB dB dBm dBm dB/C dBm dBm % % V A V Ohm C 38 37 30 -30 ...96 x 96 DC pads (5, 10, 14, 19) = 288 x 96 Pin number Pin name 24 IN 1, 2, 7, 17, 22, 23 3, 8, 16, 2...
Description X-band GaInP HBT High Power Amplifier

File Size 264.73K  /  7 Page

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