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Shenzhen Taychipst Electronic Co., Ltd
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| Part No. |
BYW98-200
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| OCR Text |
...s average forward current. 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 if(av)(a) rth(j-a)=75c/w rth(j-a)=rth(j-l) tamb(c) t d =tp...200 10 20 50 100 c(pf) f=1mhz tj=25c vr(v) fig. 6: junction capacitance versus reverse voltage appl... |
| Description |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
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| File Size |
806.44K /
2 Page |
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Shenzhen Luguang Electronic Technology Co., Ltd
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| Part No. |
BYW98-200
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| OCR Text |
...s average forward current. 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 if(av)(a) rth(j-a)=75c/w rth(j-a)=rth(j-l) tamb(c) t d =tp...200 10 20 50 100 c(pf) f=1mhz tj=25c vr(v) fig. 6: junction capacitance versus reverse voltage appl... |
| Description |
High Efficiency Fast Recovery Rectifier Diodes
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| File Size |
235.86K /
4 Page |
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it Online |
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http://
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| Part No. |
GS8640V36T-200 GS8640V36T-300 GS8640V36T-300I
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| OCR Text |
...9 40 41 42 43 44 45 46 47 48 49 50 ft
gs8640v18/32/36t-300/250/200/167 product preview specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.00 9/2004 3/23 ? 2004, ... |
| Description |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
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| File Size |
444.61K /
23 Page |
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it Online |
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http://
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| Part No. |
GS864036T-200 GS864036T-300I
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| OCR Text |
...9 40 41 42 43 44 45 46 47 48 49 50 ft gs864018/32/36t-300/250/200/167 product preview specifications cited are subject to change without notice . for latest documentation see http://www.gsitechnology.com. rev: 1.00 9/2004 2/24 ? 2004, gsi... |
| Description |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs
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| File Size |
600.54K /
24 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BLF7G20L-200 BLF7G20LS-200 BLF7G20L-200-15
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| OCR Text |
...v gs(th) +3.75 v; v ds =10v 42 50.6 - a i gss gate leakage current v gs =11v; v ds =0v ? 420 2.44 420 na g fs forward transconductance v ds...200_7g20ls-200 all information provided in this document is subject to legal disclaimers. ? nxp b.v.... |
| Description |
Power LDMOS transistor
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| File Size |
125.78K /
13 Page |
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it Online |
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NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
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| Part No. |
BUK444-200 BUK444-200A BUK444-200B BUK444
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| OCR Text |
...; ID = 2.9 A; VGS = 10 V; RGS = 50 ; Rgen = 50 Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm f...200
Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDS... |
| Description |
PowerMOS transistor 功率金属氧化物半导体晶体
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 200V; Case Size: 16x20 mm; Packaging: Bulk
PowerMOS transistor
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| File Size |
76.65K /
7 Page |
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it Online |
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Vishay Siliconix
Vishay Beyschlag
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| Part No. |
BY229B-200 BY229X-200 BY229X-400 BY229B-800-E3/81 BY229-800 BY229B-400 BY229B-600 BY229X-600 BY229X-800 BY229-200 BY229-400 BY229-600
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| OCR Text |
... = 1.0 a, v r = 30 v, di/dt = 50 a/s, i rr = 10 % i rm t rr 145 ns maximum recovered stored charge i f = 2.0 a, v r = 30 v, di/dt ...200-e3/45 1.80 45 50/tube tube ito-220ac by229x-200-e3/45 1.95 45 50/tube tube to-263ab by229b-200-e... |
| Description |
Fast Switching Plastic Rectifier
8 A, 800 V, SILICON, RECTIFIER DIODE, TO-263AB ROHS COMPLIANT, PLASTIC PACKAGE-3
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| File Size |
129.75K /
5 Page |
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it Online |
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