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  5mw Datasheet PDF File

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    ML7XX16 ML7XX16SERIES

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
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Part No. ML7XX16 ML7XX16SERIES
OCR Text ...e (parallel) CW CW,Tc=85C CW,Po=5mw CW,Po=5mw,Tc=85C CW,Po=5mw CW,Po=5mw CW,Po=5mw,Tc=-20C CW,Po=5mw,Tc=-20C CW,Po=5mw +85C +85C Conditions Limits Min. 0.18 1290 35 0.1 MITSUBISHI ELECTRIC Typ. 10 35 30 75 1.1 0.25 1310 45 25 30 11 100 10 M...
Description 2.5Gbps InGaAs DFB LASER DIODE
2.5Gbps InGaAsP DFB LASER DIODE

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    ML7XX32 ML792H32-01 ML792E32 ML792E32-01 ML792H32

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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
Part No. ML7XX32 ML792H32-01 ML792E32 ML792E32-01 ML792H32
OCR Text ... psec CW,Tc=85 C o CW,Po=5mw CW,Po=5mw,Tc=85 oC CW,Po=5mw CW,Po=5mw CW,Po=5mw,Tc= 0 oC ~ +85 oC CW,Po=5mw,Tc= 0 oC ~ +85 oC CW,Po=5mw 10Gbps, Ex=7dB, Vpp=2.0V 10Gbps, Ex=7dB, Vpp=2.0V 4th order Bessel - Thompson Filter (perpendicu...
Description 10Gbps InGaAsP DFB LASER DIODE 10Gbps的InGaAsP的DFB激光器二极

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    DL-3038-034

Sanyo Semicon Device
Part No. DL-3038-034
OCR Text ... dPo/dIop Im As Condition CW Po=5mw Po=5mw Po=5mw Po=5mw Po=5mw Po=5mw Po=5mw Min. 25 6 0.05 Typ. 30 40 2.3 635 30 8 0.4 0.2 10 Max. 50 60 2.5 645 35 10 3 3 0.5 Unit mA mA V nm mW/mA mA m Differential Efficiency Monitoring Output Cur...
Description RED LASER DIODE

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    QL65D6SA

List of Unclassifed Manufacturers
ETC
Part No. QL65D6SA
OCR Text ...a typical light output power of 5mw for optoelectronic devices such as Bar Code Reader. APPLICATION - Optical Leveler - Laser Module - Bar Code Reader FEATURES - Visible Light Output - Optical Power Output - Package Type : : : p = 6...
Description InGaAlP Laser Diode

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    PD15-22B PD15-22TR8

Everlight Electronic Co., Ltd.
Everlight Electronics Co., Ltd
Part No. PD15-22B PD15-22TR8
OCR Text ... nA V pF nS Condition -------Ee=5mw/c p=940nm Ee=5mw/c p=940nm VR=5V Ee=0mW/c VR=10V Ee=0mW/c IR=100A Ee=0mW/c f=1MHZ VR=5V RL=1000 VR=10V EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DTD-152-001 REV : PAGE : 1.0 4/7 1206 Pa...
Description 1206 Package Silicon PIN Photodiode 1206包硅PIN光电二极

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    HFE4190-441

Finisar Corporation.
Part No. HFE4190-441
OCR Text ...notes monitor current poc = 0.5mw, t a = 25 o c i pd 0.1 0.6 ma poc = 0.5mw, t a = - 40 o c i pd tbd tbd poc = 0.5mw, t a = +85 o c i pd tbd tbd ma monitor current temperature variation poc = 0.5mw, 0 o c...
Description 2.5Gbps 850nm VCSEL, LC TOSA

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    CLT132 CLT133 CLT130 CLT131

Clairex Technologies
ETC[ETC]
List of Unclassifed Manufacturers
Part No. CLT132 CLT133 CLT130 CLT131
OCR Text ...g. test conditions VCE=5V, Ee=1.5mw/cm 2 VCE=5V, Ee=1.5mw/cm 2 VCE=5V, Ee=1.5mw/cm 2 VCE=5V, Ee=1.5mw/cm VCE=10V, Ee=0 IC=100A VCC=5V, RL=100. 2 note: 1. Radiation source for all light current testing is a 940nm IRED. Clairex reserve...
Description Phototransistor, TO-18 metal can
NPN Silicon Phototransistors

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    LD67D7S-A

Sensortechnics GmbH
Part No. LD67D7S-A
OCR Text ...al light outp ut po wer of 5mw for optoele ctron ic dev ices su ch as bar code rea der . ? appli c ation - optical lev eler - laser m odule - bar co de read er ? features - visible lig h t output : p = 670 n m - ...
Description Optical Leveler

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    MTD8060N

Marktech Corporate
Part No. MTD8060N
OCR Text ...r Tf Test Condition Ic=0.2mA,Ee=5mw/cm2* Vce=20V, Ee=0.5mw/cm2* Vce=20V, Ee=0.5mw/cm2* - - - RL=100,Vce=5V,Ic=0.5mA RL=100,Vce=5V,Ic=0.5mA Min - - - - - - - - Typ .20 3.00 - 400~1100 880 12 o Max - - 100 - - - - - Unit A A nA A V de...
Description Photo Transistor

File Size 101.29K  /  2 Page

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