Description |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的sODIMM基于512mb乙芯4位非ECC 200pin unbuffered sODIMM based on 512mb B-die 64bit Non-ECC 200pin缓冲的sODIMM基于512mb乙芯64位非ECC 64M X 64 ddr DRAM MODULE, 0.5 ns, ZMA200 ROHs COMPLIANT, sODIMM-200 32M X 64 ddr DRAM MODULE, 0.5 ns, ZMA200 ROHs COMPLIANT, sODIMM-200 200pin unbuffered sODIMM based on 512mb B-die 64bit Non-ECC 200pin缓冲的sODIMM基于512mb乙芯4位非ECC 128M X 64 ddr DRAM MODULE, 0.5 ns, ZMA200 ROHs COMPLIANT, sODIMM-200 Triac; Thyristor Type:snubberless; Peak Repetitive Off-state Voltage, Vdrm:400V; On state RMs Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHs Compliant: Yes
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