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6v us Datasheet PDF File

For 6v us Found Datasheets File :: 4882 Search Time::1.047ms
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				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S560832B K4S560832B-TC_L1H K4S560832B-TC_L1L K4S560832B-TC_L75 K4S560832B-TC/L75 K4S560832B-TC/L1L K4S560832B-TC/L1H
OCR Text	...ote Notes : 1. VIH (max) = 5.6v AC. The overshoot voltage duration is 3ns. 2. VIL (min) = -2.0V AC. The undershoot voltage duration is ...us ns CLK CLK CLK CLK ea 1 2,5 5 2 2 3 4 1 1 1 1 Unit Note Notes : 1. The minimum number of clock...
Description	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
File Size	130.10K / 11 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S560832C-TC_L75 K4S560832C-TC_L7C K4S560832C-TC/L1H K4S560832C-TC/L1L K4S560832C-TC/L75 K4S560832C-TC/L7C K4S560832C-TC750
OCR Text	...ote Notes : 1. VIH (max) = 5.6v AC. The overshoot voltage duration is 3ns. 2. VIL (min) = -2.0V AC. The undershoot voltage duration is ...us ns CLK CLK CLK CLK ea 1 2, 5 5 2 2 3 4 1 1 1 1 Unit Note Notes : 1. The minimum number of cloc...
Description	32M X 8 SYNCHRONOus DRAM, 5.4 ns, PDSO54 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
File Size	111.63K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S560832D-TC_L75 K4S560832D-TC_L7C K4S560832D-TC/L1H K4S560832D-TC/L1L K4S560832D-TC/L75 K4S560832D-TC/L7C
OCR Text	...ote Notes : 1. VIH (max) = 5.6v AC. The overshoot voltage duration is 3ns. 2. VIL (min) = -2.0V AC. The undershoot voltage duration is ...us ns CLK CLK CLK CLK ea 1 2, 5 5 2 2 3 4 1 1 1 1 Unit Note Notes : 1. The minimum number of cloc...
Description	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
File Size	116.54K / 11 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S640832C K4S640832C-TC_L1L K4S640832C-TC_L70 K4S640832C-TC_L80 K4S640832C-TC_L1H K4S640832C-TC_L10 K4S640832C-TC/L10 K4S640832C-TC/L1H K4S640832C-TC/L1L K4S640832C-TC/L70 K4S640832C-TC/L80
OCR Text	...ote Notes : 1. VIH (max) = 5.6v AC. The overshoot voltage duration is 3ns. 2. VIL (min) = -2.0V AC. The undershoot voltage duration is ...us ns ns CLK CLK CLK ea 1 2 2 2 3 4 1 1 1 1 Unit Note Notes : 1. The minimum number of clock cycl...
Description	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	128.76K / 11 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S640832D-TC_L1L K4S640832D-TC_L80 K4S640832D-TC_L75 K4S640832D-TC/L10 K4S640832D-TC/L1H K4S640832D-TC/L1L K4S640832D-TC/L75 K4S640832D-TC/L80
OCR Text	...ote Notes : 1. VIH (max) = 5.6v AC. The overshoot voltage duration is 3ns. 2. VIL (min) = -2.0V AC. The undershoot voltage duration is ...us ns CLK CLK CLK CLK ea 1 2,5 5 2 2 3 4 1 1 1 1 Unit Note Notes : 1. The minimum number of clock...
Description	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	127.15K / 10 Page	View it Online	Download Datasheet

				http:// PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	PHD12NQ15T PHP12NQ15T PHB12NQ15T PHB12NQ15T/T3
OCR Text	...in Current, ID (A) Tj = 25 C 8V 6v 5.5 V VGS = 10V Normalised Current Derating, ID (%) 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 12...us 10 100 us D.C. 1 1 ms 10 ms 100 ms Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VD...
Description	N-channel TrenchMOS transistor 12.5 A, 150 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	110.51K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHD5N20E
OCR Text	...s) 10 V 7V Tj = 25 C PHP5N20 6v 8 5.5 V 6 5V 4 VGS = 4.5 V 2 0 20 40 60 80 100 Tmb / C 120 140 160 180 0...us 100 us 1 ms 2 1.5 VGS = 10 V 1 0.5 Tj = 25 C 0 1 DC 10 ms 100 ms 0.1 1 10 10...
Description	PowerMOS transistor
File Size	50.47K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHP5N20E
OCR Text	...s) 10 V 7V Tj = 25 C PHP5N20 6v 8 5.5 V 6 5V 4 VGS = 4.5 V 2 0 20 40 60 80 100 Tmb / C 120 140 160 180 0...us 100 us 1 ms 2 1.5 VGS = 10 V 1 0.5 Tj = 25 C 0 1 DC 10 ms 100 ms 0.1 1 10 10...
Description	PowerMOS transistor
File Size	47.45K / 7 Page	View it Online	Download Datasheet

				SEMTECH[Semtech Corporation]
Part No.	SC1405B SC1405BTS.TR
OCR Text	...specified: -0 < J < 125C; VCC = 6v; 4V < VBST < 26v Parameter Pow er Supply Supply Voltage Quiescent Current Quiescent Current, operating...us us trBG trBG tpdhBGHI tpdlBG CI = 3nF, V CI = 3nF, V VS VS Symbol Conditions Min Typ...
Description	HIGH SPEED SYNCHRONOus POWER MOSFET SMART DRIVER
File Size	258.16K / 13 Page	View it Online	Download Datasheet

For 6v us Found Datasheets File :: 4882 Search Time::1.047ms
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