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  7.2mh Datasheet PDF File

For 7.2mh Found Datasheets File :: 790    Search Time::1.219ms    
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    RCP-109D

Sumida Corporation
Part No. RCP-109D
OCR Text ... 1.0 max.9.5 5.0 1.0 10.00.5 0.7-0.05 +0.1 5.00.3 power inductors <smd type: rcp series> please refer to the sales office...2mh 10% 1.16 0.12 0.27 rcp195dnp-152k 152k 1.5mh 10% 1.35 0.11 0.26 rcp195dnp-182k 182k...
Description POWER INDUCTORS

File Size 182.38K  /  2 Page

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    INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. HGT1S10N12 HGT1S10N120BNS HGTP10N120BN HGTG10N120BN FN4575
OCR Text ...N 1200 15 6.0 55 TYP 150 2.45 3.7 6.8 MAX 250 2 2.7 4.2 250 UNITS V V A A mA V V V nA A Collector to Emitter Breakdown Voltage Emitter to...2mH Test Circuit (Figure 18) TEST CONDITIONS IGBT and Diode at TJ = 25oC ICE = 10A VCE = 0.8 BVCES V...
Description From old datasheet system
35A 1200V NPT Series N-Channel IGBT
35A/ 1200V/ NPT Series N-Channel IGBT
36 MACROCELL 3.3 VOLT ISP CPLD 35 A, 1200 V, N-CHANNEL IGBT, TO-247
35A, 1200V, NPT Series N-Channel IGBT 35 A, 1200 V, N-CHANNEL IGBT

File Size 80.62K  /  7 Page

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    RCP105

Sumida Corporation
Part No. RCP105
OCR Text ... 1/3 5.0 ?0.7?}0.1 10.0?}0.5 5.0?}0.2 ?}1.0 max.13.5 ?? product description ?e 10.5mm max. ? , 13.5mm(rcp-105);10.5m...2mh ? 10% 80 2.3 120 rcp1?5lnp-152k 152k 1.5mh ? 10% 80 3.1 110 rcp1?5lnp-182k 182k 1.8mh ? ...
Description POWER INDUCTORS

File Size 55.98K  /  3 Page

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    HGT1S10N120BNST

Fairchild Semiconductor
Part No. HGT1S10N120BNST
OCR Text ...e = 15v t c = 25 o c - 2.45 2.7 v t c = 150 o c-3.74.2v gate to emitter threshold voltage v ge(th) i c = 90 a, v ce = v ge 6.0 6.8 - v...2mh test circuit (figure 18) -2326ns current rise time t ri -1115ns current turn-off delay time t d(...
Description 35A, 1200V, NPT Series N-Channel IGBT

File Size 176.75K  /  8 Page

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    MPS Industries, Inc.
Part No. MPQ2451GG-33-Z MPQ2451GG-5-AEC1 MPQ2451GG-5-AEC1-Z MPQ2451GG-33-AEC1 MPQ2451GT-33
OCR Text .... 4) measured on jesd51 - 7, 4 - layer pcb. o u t o u t mpq2451 - 5/33 D 36v , 2.2mh z , 0.6 a, step - down converter , aec - q100 qualified mpq2451 - 5/33 rev 1.0 www.monolit hicpower.com 3 5/25/2016 mp...
Description    36V, 2.2MHz, 0.6A, Step-Down Converter AEC-Q100 Qualified

File Size 1,800.81K  /  18 Page

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    HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N120BNST
OCR Text ...N 1200 15 6.0 55 TYP 150 2.45 3.7 6.8 MAX 250 2 2.7 4.2 250 UNITS V V A A mA V V V nA A Collector to Emitter Breakdown Voltage Emitter to...2mH Test Circuit (Figure 18) TEST CONDITIONS IGBT and Diode at TJ = 25oC ICE = 10A VCE = 960V VGE = ...
Description 1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape &amp; Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
35A/ 1200V/ NPT Series N-Channel IGBT
35A, 1200V, NPT Series N-Channel IGBT
35 A, 1200 V, NPT N-Channel IGBT

File Size 175.79K  /  8 Page

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    HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N12

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N12
OCR Text ...GE = 12V, VGE = 15V 0 FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMI...2mH, VCE = 960V tdI , TURN-ON DELAY TIME (ns) 35 TJ = 25oC, TJ = 150oC, VGE = 12V trI , RISE TIME (n...
Description 43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT

File Size 135.28K  /  7 Page

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    HGTG11N120CND

FAIRCHILD[Fairchild Semiconductor]
Part No. HGTG11N120CND
OCR Text ...O EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMI...2mH, VCE = 960V tdI , TURN-ON DELAY TIME (ns) 35 TJ = 25oC, TJ = 150oC, VGE = 12V trI , RISE TIME (n...
Description 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 108.55K  /  8 Page

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For 7.2mh Found Datasheets File :: 790    Search Time::1.219ms    
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