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				MICRON[Micron Technology]
Part No.	MT58L1MY18D MT58L512Y32D MT58L512Y36D MT58V512V36D MT58V512V32D
OCR Text	... 9 BWc# 9 9 512k x 8 x 4 (x32) 512k x 9 x 4 (x36) 36 SENSE AMPS 36 OUTPUT REGISTERS 36 BWb# BYTE "b" WRITE REGISTER ...bit-wide applications. Please refer to the Micron Web site (www.micronsemi.com/en/products/sram/) fo...
Description	16Mb SYNCBURST⑩ SRAM 16Mb SYNCBURST SRAM
File Size	497.29K / 34 Page	View it Online	Download Datasheet

				MCNIX[Macronix International]
Part No.	MX26C4000B MX26C4000BMC-10 MX26C4000BMC-12 MX26C4000BMC-15 MX26C4000BMC-90 MX26C4000BMI-10 MX26C4000BMI-12 MX26C4000BMI-15 MX26C4000BMI-90 MX26C4000BPC-10 MX26C4000BPC-12 MX26C4000BPC-15 MX26C4000BPC-90 MX26C4000BPI-10 MX26C4000BPI-12 MX26C4000BPI-15 MX26C4000BPI-90 MX26C4000BQC-10 MX26C4000BQC-12 MX26C4000BQC-15 MX26C4000BQC-90 MX26C4000BQI-10 MX26C4000BQI-12 MX26C4000BQI-15 MX26C4000BQI-90 MX26C4000BTC-10 MX26C4000BTC-12 MX26C4000BTC-15 MX26C4000BTC-90 MX26C4000BTI-10 MX26C4000BTI-15 MX26C4000BTI-12
OCR Text	8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM * * * * * Chip erase time: 2s (typ.) Chip program time: 25s (typ.) 100 minimum erase/program cycle...bit, MTP EPROMTM (Multiple Time Programmable Read Only Memory). It is organized as 512k words by 8 b...
Description	4M-BIT [512k x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM
File Size	956.57K / 20 Page	View it Online	Download Datasheet

				Winbond Electronics
Part No.	W981616AH W981616AHB1
OCR Text	...wing speed grades: -6, -7, and -8. Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a bu...bit in the sequence shown in Table 3. Table 3 Address Sequence of Interleave Mode DATA Data 0 Da...
Description	512 x 2 Banks x 16 Bits SDRAM 512k x 2 BANKS x 16 BIT SDRAM From old datasheet system
File Size	1,275.25K / 40 Page	View it Online	Download Datasheet

				Winbond
Part No.	W981616BH
OCR Text	...d at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically gene...bit in the sequence shown in Table 3. Table 3 Address Sequence of Interleave Mode DATA Data 0 Da...
Description	512k 2 BANKS 16 BITS SDRAM
File Size	1,012.86K / 40 Page	View it Online	Download Datasheet

				ETC LSI Computer Systems YAMAHA
Part No.	YGV619
OCR Text	...nction can be set by region. q 8 bit DACs are built in for R, G and B individually. (Max. operating frequency: 80 MHz) q Two PLLs are built in. (1: Generates SDRAM clock and system clock 2: Generates dot clock) q Display monitor control ...
Description	Advanced Video Display Processor 6 3.3V Advanced video display processor 6
File Size	336.13K / 15 Page	View it Online	Download Datasheet

				Sony Corporation
Part No.	CXD1852Q
OCR Text	...ded with a single 4-Mbit DRAM * 8-bit parallel and 4-line serial host interfaces * CD-DA through operation allowed Block Diagram 120 pin QFP (Plastic) Structure Silicon gate CMOS IC Applications Video CD players, MPEG1 decoder boards, et...
Description	MPEG1 Decoder
File Size	377.80K / 30 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
Part No.	MCM6946YJ10 MCM6946YJ10R MCM6946TS1 MCM6946TS8 MCM6946YJ8R MCM6946 MCM6946TS10 MCM6946TS10R MCM6946TS12 MCM6946TS12R MCM6946TS15 MCM6946TS15R MCM6946TS8R MCM6946YJ12 MCM6946YJ12R MCM6946YJ15 MCM6946YJ15R MCM6946YJ8
OCR Text	8 Bit Static Random Access Memory The MCM6946 is a 4,194,304-bit static random access memory organized as 524,288 words of 8 bits. Static design eliminates the need for external clocks or timing strobes. The MCM6946 is equipped with chip e...
Description	512k x 9 Bit Fast Static Random Access Memory 512k X 8 STANDARD SRAM, 12 ns, PDSO36 512k x 9 Bit Fast Static Random Access Memory 512k X 8 STANDARD SRAM, 10 ns, PDSO36
File Size	171.95K / 11 Page	View it Online	Download Datasheet

				Winbond
Part No.	W29EE512 W29EE512P-12 W29EE512P-12B W29EE512P-70 W29EE512P-70B W29EE512P-90 W29EE512P-90B W29EE512T-12 W29EE512T-12B W29EE512T-70 W29EE512T-70B W29EE512T-90 W29EE512T-90B
OCR Text	8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29EE512 is a 512k bit, 5-volt only CMOS flash memory organized as 64K x 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required....
Description	64K X 8 CMOS FLASH MEMORY
File Size	151.12K / 20 Page	View it Online	Download Datasheet

				Winbond Electronics WINBOND[Winbond]
Part No.	W39L040 W39L040P-70 W39L040P-70B W39L040P-70J W39L040P-70K W39L040P-90 W39L040P-90B W39L040P-90J W39L040P-90K W39L040Q-70 W39L040Q-70B W39L040Q-70J W39L040Q-70K W39L040Q-90 W39L040Q-90B W39L040Q-90J W39L040Q-90K W39L040T-70 W39L040T-70B W39L040T-70J W39L040T-70K W39L040T-90 W39L040T-90B W39L040T-90J W39L040T-90K
OCR Text	8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L040 is a 4Mbit, 3.3-volt only CMOS flash memory organized as 512k x 8 bits. For flexibl...bit/Data polling * TTL compatible I/O * JEDEC standard byte-wide pinouts * Available packages: 32L ...
Description	512 K X 8 CMOS FLASH MEMORY
File Size	327.83K / 27 Page	View it Online	Download Datasheet

				BSI[Brilliance Semiconductor]
Part No.	BS616LV4020 BS616LV4020AC BS616LV4020AI BS616LV4020BC BS616LV4020BI BS616LV4020DC BS616LV4020DI
OCR Text	8 bit switchable DESCRIPTION BS616LV4020 * Very low operation voltage : 2.7 ~ 3.6V * Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I-grade : 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby cur...
Description	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512k x 8 bit switchable
File Size	215.30K / 12 Page	View it Online	Download Datasheet

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