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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT13F120s APT13F120B
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| OCR Text |
...F
5
VGs = 0V, VDs = 0V to 800v
Effective Output Capacitance, Energy Related Total Gate Charge Gate-source Charge Gate-Drain Charge ...s
TJ = 25C TJ = 125C
50 1.0 250 520 1.12 3.03 10 13.5 25 V ns C A V/ns
IsD = 7A, TJ = 25C, VG... |
| Description |
N-Channel FREDFET
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| File Size |
249.19K /
4 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT14M120s APT14M120B
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| OCR Text |
...F
5
VGs = 0V, VDs = 0V to 800v
Effective Output Capacitance, Energy Related Total Gate Charge Gate-source Charge Gate-Drain Charge ...s
51 1.0 1205 23 10 V ns C V/ns
IsD = 7A, TJ = 25C, VGs = 0V IsD = 7A 3 disD/dt = 100A/s, TJ =... |
| Description |
N-Channel MOsFET
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| File Size |
388.37K /
4 Page |
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it Online |
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Novacap
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| Part No. |
1206B753K201PTM 1206B753J500PTM 1206B753J250PTM 1206B753J101PTM
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| OCR Text |
...v 200v 250v 300v 400v 500v 600v 800v* 1000v* 1500v* 2000v* 3000v* 4000v* 5000v* 6000v* 7000v* 8000v* 9000v* 10000v* 273 223 223 223 103 682 ...s s 1 1 0 0 & & 1 1 1 1 f f o o r r o o r r d d e e r r i i n n g g i i n n f f o o r r m m a a... |
| Description |
CAPACITOR, CERAMIC, MULTILAYER, 200 V, X7R, 0.075 uF, sURFACE MOUNT, 1206 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 50 V, X7R, 0.075 uF, sURFACE MOUNT, 1206 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 25 V, X7R, 0.075 uF, sURFACE MOUNT, 1206 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 100 V, X7R, 0.075 uF, sURFACE MOUNT, 1206 CHIP
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| File Size |
49.69K /
4 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT22F120L APT22F120B2
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| OCR Text |
...F
5
VGs = 0V, VDs = 0V to 800v
Effective Output Capacitance, Energy Related Total Gate Charge Gate-source Charge Gate-Drain Charge ...s
TJ = 25C TJ = 125C
90 230 500 13 35 11 15 1.1 270 640 V ns C A 25 V/ns
IsD = 12A, TJ = 25C,... |
| Description |
N-Channel FREDFET
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| File Size |
388.41K /
4 Page |
View
it Online |
Download Datasheet |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT24M120B2
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| OCR Text |
...F
5
VGs = 0V, VDs = 0V to 800v
Effective Output Capacitance, Energy Related Total Gate Charge Gate-source Charge Gate-Drain Charge ...s
200 1 1270 30 10 V ns C V/ns
IsD = 12A, TJ = 25C, VGs = 0V IsD = 12A 3 disD/dt = 100A/s, TJ ... |
| Description |
N-Channel MOsFET
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| File Size |
393.63K /
4 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT2X101DQ120J APT2X100DQ120J
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| OCR Text |
... = 100A, diF/dt = -1000A/s VR = 800v, TC = 125C IF = 100A, diF/dt = -200A/s VR = 800v, TC = 125C IF = 100A, diF/dt = -200A/s VR = 800v, TC = 25C Test Conditions IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C MIN -
APT2x101_100DQ120J
TYP ... |
| Description |
ULTRAFAsT sOFT RECOVERY RECTIFIER DIODE
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| File Size |
143.67K /
4 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT2X101DQ120J APT2X100DQ120J
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| OCR Text |
... = 100A, diF/dt = -1000A/s VR = 800v, TC = 125C IF = 100A, diF/dt = -200A/s VR = 800v, TC = 125C IF = 100A, diF/dt = -200A/s VR = 800v, TC = 25C Test Conditions IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C MIN -
APT2x101_100DQ120J
TYP ... |
| Description |
ULTRAFAsT sOFT RECOVERY RECTIFIER DIODE
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| File Size |
280.07K /
4 Page |
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it Online |
Download Datasheet |
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http://
ADPOW[Advanced Power Technology]
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| Part No. |
APT2X31DQ120J APT2X30DQ120J
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| OCR Text |
...F = 30A, diF/dt = -1000A/s VR = 800v, TC = 125C IF = 30A, diF/dt = -200A/s VR = 800v, TC = 125C IF = 30A, diF/dt = -200A/s VR = 800v, TC = 25C Test Conditions IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C MIN -
APT2x31_30DQ120J
TYP MAX ... |
| Description |
ULTRAFAsT sOFT RECOVERY RECTIFIER DIODE
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| File Size |
142.99K /
4 Page |
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it Online |
Download Datasheet |
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Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
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| Part No. |
APT2X31DQ120J APT2X30DQ120J
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| OCR Text |
...F = 30A, diF/dt = -1000A/s VR = 800v, TC = 125C IF = 30A, diF/dt = -200A/s VR = 800v, TC = 125C IF = 30A, diF/dt = -200A/s VR = 800v, TC = 25C Test Conditions IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C MIN -
APT2x31_30DQ120J
TYP MAX ... |
| Description |
Fast Recovery Epitaxial Diode; Package: IsOTOP®; IO (A): 30; VR (V): 1200; trr (nsec): 25; VF (V): 2.6; Qrr (nC): 1800; 30 A, 1200 V, sILICON, RECTIFIER DIODE
ULTRAFAsT sOFT RECOVERY RECTIFIER DIODE
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| File Size |
279.68K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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