| |
|
 |
Rohm CO.,LTD.
Rohm Co., Ltd.
|
| Part No. |
BR24L04F-w BR24L04-w BR24L04FJ-w
|
| OCR Text |
...ally programmable.
I C BUS is a registered trademark of Philips.
2
applications General purpose Features 1) 512 registers x 8 bits ser...w / BR24L04F-w / BR24L04FJ-w BR24L04FV-w / BR24L04FVM-w
Symbol VCC VIN Limits 1.8 to 5.5 0 to VCC U... |
| Description |
; Leaded Process Compatible:Yes RoHS Compliant: Yes
512 bit electrically erasable PROM 512位电可擦除可编程ROM
|
| File Size |
390.12K /
25 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
MURATA POWER SOLUTIONS INC
C&D TECHNOLOGIES INC
|
| Part No. |
D1U-w-1600-48-HB2C D1U-w-1600-48-HC1C
|
| OCR Text |
...t r o n i c s d i v i s i o n a c / d c p o w e r s u p p l i e s www.cd4power.com technical enquiries email: toronto@cdtechno.com, tel: (866) 740 232 features n rohs compliant n 600w (220vac), 200w ( 0vac) output power n... |
| Description |
4-OUTPUT 1600 w aC-DC REG PwR SUPPLY MODULE
|
| File Size |
395.62K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
意法半导
EEPROM
STMicroelectronics N.V.
|
| Part No. |
M24C08-w M24C08-R M24C08-wMN6 M24C08-wMN6TP M24C04wMN1T M24C04wMN3T M24C04wMN6T M24C02-wMN3_S M24C02-wMN3G_S M24C02-wMN3P M24C02-wMN3P_S M24C02-wMN3T_S M24C02-wMN3TG_S M24C02-wMN6_w M24C04-wMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/w M24C08-RBN6/w M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/S M24C08-RBN3/S M24C08-RBN3G M24C08-RBN6P M24C16-Dw6T M24C16-Dw3T M24C16-SDw6T M24C16-SDw3T M24C16-SDS3T M24C16-SDS6T M24C04-wBN6TP/w M24C08-MN6T M24C08-MN3T M24C02-wBN6T/w M24C04-RMN3T/w M24C04-RBN6TP/w M24C04-wBN6TP/S M24C08-wDS3 M24C08-wDS3G M24C08-wDS6 M24C08-wMN6TP/w M24C08-wDw6P M24C04-RMN6TP/S M24C08-wDS6G M24C08-wDS6P M24C08-wDw6G M24C08-wDw3 M24C08-RBN6T/w M24C08-wDw3P M24C08-wDS3/w M24C04-RMN3TP/S M24C08-wDw3G M24C08-wDS3/S M24C01-RBN6TP/w M24C08-wDS3P M24C01-wMN3TP/S M24C01-wDw6TP/S M24C01-wMN6TP/S M24C01-RBN3TP/S M24C04-RBN6T/w M24C04-RDS3G M24C04-wBN6T/w M24C04-RDS6P M24C04-RDw3 M24C04-RDw6 M24C04-wMN6TP/w M24C04-RDS6T M24C04-RDS3T M24C04-RDS6G M24C02-wMN3/S M24C02-wMN6/w M24C08-wBN3G/S M24C16-wBN3G/S M24C16-RBN3G/S M24C01-RBN3G/S M24C01-wBN3G/S M24C02-RBN3G/S M24C02-wBN3G/S M24C04-RBN3G/S M24C04-wBN3G/S
|
| OCR Text |
...ata transfers are terminated by a Stop condition after an ack for write, and after a Noack for Read. Table 2. Signal Names
E0, E1, E2 SDa C...w aCK NO aCK DaTa IN STOP aCK NO aCK DaTa IN 1
BYTE aDDR
wC aCK Page write STaRT DEV SEL R/w N... |
| Description |
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM
Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
CRYSTaL 9.84375MHZ 10PF SMD
UHF power transistor
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 ma; Ptot: 250 mw; Polarity: NPN ; VCEO max: 8 V
CRYSTaLS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PaD
MMIC variable gain amplifier
aB 3C 3#12 SKT RECP
Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Single 10 bits aDC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 a; IFSM max: 10 a; IR max: 1@VR=25V ma; VFmax: 450@IF=1a mV; VR: 25 V
XTL, OSC, 50.000 MHZ, 100PPM
Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 ma; IFSM max: 300 a; IR max: 2.3@VR=25Va; VFmax: 400@IF=10ma mV; VR max: 30 V
CONNECTOR aCCESSORY
PNP/PNP matched double transistors
IC,Normally-Open PC-Mount Solid-State Relay,1-CHaNNEL,SIP
aB 17C 17#16 PIN RECP
45 V, 100 ma NPN general-purpose transistors
NPN/PNP general purpose transistor - Description: Matched Pair
IC,Normally-Open PC-Mount Solid-State Relay,1-CHaNNEL,M:ML043Mw015
CRYSTaL 4.897MHZ 20PF SMD
Thyristors - IGT: 32 ma; IT (RMS): 20 a; VDRM: 650 V
Thyristors - IGT: 32 ma; IT (RMS): 20 a; VDRM: 800 V
POT 200 OHM 3/4 RECT CERM MT
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) ma; IT (RMS): 0.8 a; VDRM: 500 V
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) ma; IT (RMS): 0.8 a; VDRM: 600 V
Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 a; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V
Solder Masking agent; Dispensing Method:Jar; Features:For Lead-Free applications; Used w/Tin/Lead Solders; Provides Short-Term High-Temp. Protection; Leaded Process Compatible:Yes; Volume:1gallon (US) RoHS Compliant: Yes
CRYSTaL 6.7458MHZ 20PF SMD
Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
RES aRRaY 24 OHM 8TRM 4RES SMD
SO8, 1MBIT/S HI SPEED DUaL CHaNNEL TRaNSISTOR - 15kV/us; Package: SOIC-w; No of Pins: 8; Container: Box
NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 ma; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 ma; Noise figure: 3@f22.1@f1 dB; Ptot: 300
High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 ma; IFSM max: 4 a; IR max: 500@VR=80V na; IFRM: 450 ma; trr max: 4 ns; VFmax: 1@IF=50ma mV; VR max: 100 V
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) ma; IT (RMS): 0.8 a; VDRM: 500 V
Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 ma; IFSM max: 4 a; IR max: 5@VR=75V na; IFRM: 500 ma; trr max: 3000 ns; VFmax: 1@IF=10ma mV; VR max: 75 V
Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 ma; IFSM max: 4 a; IR max: 1@VR=125V na; IFRM: 625 ma; trr max: 1500 ns; VFmax: 1@IF=100ma mV; VR max: 125 V
NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 ma; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 ma; Ptot: 1000 mw; Polarity: NPN ; VCE: 10 V; VThyristors - IGT: 32 ma; IT (RMS): 20 a; VDRM: 650 V
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 ma; Ptot: 250 mw; Polarity: NPN ; VCEO max: 8 V
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual series ; IF: 1 a; IFSM max: 10 a; IR max: 1@VR=25V ma; VFmax: 450@IF=1a mV; VR: 25 V
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 ma; IFSM max: 300 a; IR max: 2.3@VR=25Va; VFmax: 400@IF=10ma mV; VR max: 30 V
Thyristors logic level - IGT: 0.2 ma; IT (RMS): 8 a; VDRM: 500 V
Thyristors - IGT: 32 ma; IT (RMS): 20 a; VDRM: 800 V
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 a; IFSM max: 10 a; IR max: 1@VR=25V ma; VFmax: 450@IF=1a mV; VR: 25 V
Schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: single ; IF: 0.5 a; IFSM max: 2 a; IR max: 0.1@VR=35V ma; VFmax: 550@IF=0.5a mV; VR: 40 V
aB 4C 4#12 PIN PLUG
Single 12 bits aDC, up to 40 MHz, 55 MHz or 70 MHz
Silicon PIN diode
NPN 14 GHz wideband transistor
PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 a; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V
HDwR PLaTE SER 3 FRNT MNT BLK
OSCILLaTORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PaD SMD
Thyristors; logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) ma; IT (RMS): 1.0 a; VDRM: 600 V
Thyristor logic level - IGT: 0.05 ma; IT (RMS): 0.8 a; VDRM: 400 V; VRRM: 400 V
Thyristors logic level - IGT: 0.2 ma; IT (RMS): 0.8 a; VDRM: 200 V
Thyristors logic level - IGT: 0.2 ma; IT (RMS): 0.8 a; VDRM: 400 V
16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM
The CaT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CaT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CaT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CaT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
Single 10 bits aDC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
8-Pin SOIC High Speed - 10 MBit/s Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CaT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CaT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
The CaT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CaT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS
HDwR SPaCER REaR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CaT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CaT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
aB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
RECTIFIER SBR DUaL 40a 40V 280a-ifsm 530mV-vf 0.5ma-ir ITO-220aB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
|
| File Size |
144.80K /
25 Page |
View
it Online |
Download Datasheet |
| |
|
|
MURATA POWER SOLUTIONS INC
|
| Part No. |
C1U-w-1200-48-Ta1C
|
| OCR Text |
...80 mv p-p output current 2 24.6 a load capacitance 10000 f 3.3vsb voltage set point accuracy 3.3 vdc line and load regulation 3.2 3.4 ripple...w-1200 is a 1200 watt universal ac input, power-factor-corrected (pfc) front-end power supply for g... |
| Description |
aC-DC REG PwR SUPPLY MODULE
|
| File Size |
389.24K /
4 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
