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				International Rectifier
Part No.	IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF
OCR Text	...EAD-FREE (PbF)) drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are match...side configuration which operates up to 500 or 600 volts. Typical Connection HO VDD HIN SD LIN V...
Description	HIGH AND LOW SIDE DRIVER
File Size	218.79K / 16 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3717
OCR Text	... RDS(on) max 4.4m:@VGS = 10V A A D D D D ID 20A S S 1 2 3 4 8 7 Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l ...side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these co...
Description	HEXFETPower MOSFET
File Size	246.14K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF7807VD1
OCR Text	...ient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadfra...side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these co...
Description	Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管 FETKY MOSFET / SCHOTTKY DIODE FETKY⑩ MOSFET / SCHOTTKY DIODE
File Size	116.12K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807VD2 IRF7807VD2TR
OCR Text	...ient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadfra...side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these co...
Description	30V FETKY - MOSFET and Schottky Diode in a SO-8 package FETKY MOSFET / SCHOTTKY DIODE FETKY⑩ MOSFET / SCHOTTKY DIODE
File Size	113.54K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807V
OCR Text	...osses S S S G 1 8 7 A D D D D Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unpre...side switch Q1, also called the Control FET, are impacted by the R ds(on) of the MOSFET, but these c...
Description	N Channel Application Specific MOSFET
File Size	126.34K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text	...ching Losses S S S G 1 8 7 A D D D D 2 3 6 Description These new devices employ advanced HEXFET Power MOSFET technology to ...side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these co...
Description	8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET Chip-Set for DC-DC Converters 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	238.61K / 8 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text	...olid state mass storage market. A program operation can be performed in typical 200s on a 528-byte(X8 device) or 264-word(X16 device) page a...Side View 9.000.10 0.08MAX 5 11.000.10 K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	679.73K / 42 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text	...olid state mass storage market. A program operation can be performed in typical 200s on the 528-byte(X8 device) or 264-word(X16 device) page...Side View 9.000.10 0.08MAX 5 11.000.10 K9F5608U0B-VCB0,VIB0,FCB0,FIB0 K9F5608Q0B-DCB0,D...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	601.33K / 34 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U0C-D K9F5608U0C-DCB0 K9F5608U0C-DIB0 K9F5608U0C-F K9F5608U0C-FCB0 K9F5608U0C-FIB0 K9F5608U0C-H K9F5608U0C-HCB0 K9F5608U0C-HIB0 K9F5608U0C-P K9F5608U0C-PCB0 K9F5608U0C-PIB0 K9F5608U0C-V K9F5608U0C-VCB0 K9F5608U0C-VIB0 K9F5608U0C-Y K9F5608U0C-YCB0 K9F5608U0C-YIB0 K9F1208Q0A K9F5616U0C K9F5616U0C-D K9F5616U0C-DCB0 K9F5616U0C-DIB0 K9F5616U0C-H K9F5616U0C-HCB0 K9F5616U0C-HIB0 K9F5616U0C-P K9F5616U0C-PCB0 K9F5616U0C-PIB0 K9F5616U0C-Y K9F5616U0C-YCB0 K9F5616U0C-YIB0 K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-H K9F5616Q0C-HCB0 K9F5616Q0C-HIB0 K9F1208Q0A-XXB0 K9F5608D0C-H K9F5608D0C-D K9F5608D0C-Y K9F5608D0C-P K9F5608U0M
OCR Text	...olid state mass storage market. A program operation can be performed in typical 200s on a 528-byte(X8 device) or 264-word(X16 device) page a...Side View 9.000.10 0.08MAX 4 11.000.10 K9F5608U0C-VCB0,VIB0,FCB0,FIB0 K9F5608Q0C-DCB0,D...
Description	32M x 8 Bit NAND Flash Memory 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata
File Size	653.97K / 39 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. 意法半导 ST Microelectronics
Part No.	L4973V3 L4973V3.3 L4973V3.3-L4973V5.1 L4973V33 L4973V33-L4973V51 L4973D3 L4973D3.3 L4973D3.3-L4973D5.1 L4973D33 L4973D33-L4973D51 L4973D5 L4973D5.1 L4973D51 LV4973D L4973 L4973V5.1 L4973V51 -L4973D33-L4973D51
OCR Text	...20) DESCRIPTION The L4973 is a step down monolithic power switching regulator delivering 3.5A at fixed voltages of 3.3V or 5.1V and using...Side) Figure 1b: Evaluation Board (Solder Side) 6/16 L4973V3 - L4973V5 - L4973D3 - L4973D5 ...
Description	RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效，5安培开关稳压器 3.5A STEP DOWN SWITCHING REGULATOR
File Size	221.38K / 16 Page	View it Online	Download Datasheet

For a-side Found Datasheets File :: 100522 Search Time::5.422ms
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