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				Integrated Device Technology, Inc. IDT[Integrated Device Technology]
Part No.	IDT54FCT162952CTEB IDT74FCT162952BTPV IDT73720 IDT73720A IDT73720AJ IDT73720APQF IDT73720J IDT73720PQF IDT74FCT16952ETPV IDT74FCT16952BTPA IDT74FCT16952BTPV
OCR Text	... can be independently latched * byte control on all three busses * Source terminated outputs for low noise and undershoot control * 68-pin PLCC and 80-pin PQFP package * High-performance CMOS technology. DESCRIPTION: The IDT73720/A Bus ...
Description	CAP 6.8UF 20V 20% TANT SMD-6032-15 TR-7-PL SN/PB5% LOWESR-1400 FCT SERIES, DUAL 8-BIT REGISTERED TRANSCEIVER, TRUE OUTPUT, PDSO56 16-BIT TRI-PORT BUS EXCHANGER
File Size	74.95K / 8 Page	View it Online	Download Datasheet

				IDT[Integrated Device Technology]
Part No.	IDT71V632SA4PF IDT71V632SA4PFI IDT71V632 IDT71V632S5PFI IDT71V632S5PF IDT71V632S6PF IDT71V632S6PF8 IDT71V632S6PFG IDT71V632S6PFG8 IDT71V632S6PFI IDT71V632S6PFI8 IDT71V632S5PF8 IDT71V632S5PFG IDT71V632S5PFG8 IDT71V632S5PFI8 IDT71V632S7PF IDT71V632S7PF8 IDT71V632S7PFG IDT71V632S7PFI IDT71V632S7PFI8 IDT71V632S8PF IDT71V632S8PF8
OCR Text	...with global write control (GW), byte write enable (BWE), and byte writes (BWx) Power down controlled by ZZ input Operates with a single 3.3V power supply (+10/-5%) Packaged in a JEDEC Standard 100-pin rectangular plastic thin quad flatpack ...
Description	64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter/ Single Cycle Deselect 3.3V 64K x 32 Pipelined 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter Single Cycle Deselect
File Size	271.54K / 19 Page	View it Online	Download Datasheet

				ISSI[Integrated Silicon Solution, Inc] ISSI[Integrated Silicon Solution Inc]
Part No.	IS42S16100C1 IS42S16100C1-5T IS42S16100C1-5TL IS42S16100C1-6T IS42S16100C1-6TL IS42S16100C1-7T IS42S16100C1-7TI IS42S16100C1-7TL IS42S16100C1-7TLI
OCR Text	...st stop and precharge command * byte controlled by LDQM and UDQM * Industrial temperature up to 143 MHz * Package 400-mil 50-pin TSOP II * Lead-free package option ISSI July 2004 (R) DESCRIPTION ISSI's 16Mb Synchronous DRAM IS42S1...
Description	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
File Size	750.59K / 79 Page	View it Online	Download Datasheet

				ETC[ETC]
Part No.	IS42S16400B IS42S16400B-6T IS42S16400B-6TL IS42S16400B-7T IS42S16400B-7TL
OCR Text	...st stop and precharge command * byte controlled by LDQM and UDQM * Industrial temperature availability * Package: 400-mil 54-pin TSOP II * Lead-free package is available ISSI FEBRUARY 2005 (R) OVERVIEW ISSI's 64Mb Synchronous DRAM...
Description	1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
File Size	466.90K / 55 Page	View it Online	Download Datasheet

				ISSI[Integrated Silicon Solution, Inc] ISSI[Integrated Silicon Solution Inc]
Part No.	IS42S16800A IS42S16800A-10T IS42S16800A-10TI IS42S16800A-10TL IS42S16800A-10TLI IS42S16800A-6T IS42S16800A-6TL IS42S16800A-7T IS42S16800A-7TI IS42S16800A-7TL IS42S16800A-7TLI IS42S32400A IS42S32400A-10T IS42S32400A-10TI IS42S32400A-10TL IS42S32400A-10TLI IS42S32400A-6T IS42S32400A-6TL IS42S32400A-7T IS42S32400A-7TI IS42S32400A-7TL IS42S32400A-7TLI IS42S81600A IS42S81600A-10T IS42S81600A-10TI IS42S81600A-10TL IS42S81600A-6T IS42S81600A-6TL IS42S81600A-7T IS42S81600A-7TI IS42S81600A-7TL IS42S81600A-7TLI 42S16800A
OCR Text	... VssQ NC Write Enable x 8 Lower byte, Input/Output Mask Power Ground Power Supply for I/O Pin Ground for I/O Pin No Connection Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 PRELIMINARY INFORMATION Rev. 00C 01/20/05...
Description	16Meg x 8 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
File Size	534.78K / 61 Page	View it Online	Download Datasheet

				ISSI[Integrated Silicon Solution, Inc] ETC
Part No.	IS42S32200 IS42S32200-6T IS42S32200-6TI IS42S32200-7T IS42S32200-7TI 42S32200
OCR Text	...these pins can be controlled in byte units using the DQM0-DQM3 pins CLK CS 68 20 Input Pin Input Pin I/O0 to I/O31 2, 4, 5, 7, 8, 10,11,13 74,76,77,79,80,82,83,85 45,47,48,50,51,53,54,56 31,33,34,36,37,39,40,42 16,28,59,71 ...
Description	512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
File Size	953.57K / 55 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text	... device(K9F5608X0C) : (512 + 16)byte - X16 device(K9F5616X0C) : (256 + 8)Word - Block Erase : - X8 device(K9F5608X0C) : (16K + 512)byte - X16 device(K9F5616X0C) : ( 8K + 256)Word * Page Read Operation - Page Size - X8 device(K9F5608X0C) : (...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	679.73K / 42 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text	... location is changed from 256th byte to 256th and 261th byte. 2. tAR1, tAR2 are merged to tAR.(page 12) (before revision) min. tAR1 = 20ns , min. tAR2 = 50ns (after revision) min. tAR = 10ns 3. min. tCLR is changed from 50ns to 10ns.(page12...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	601.33K / 34 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U0C-D K9F5608U0C-DCB0 K9F5608U0C-DIB0 K9F5608U0C-F K9F5608U0C-FCB0 K9F5608U0C-FIB0 K9F5608U0C-H K9F5608U0C-HCB0 K9F5608U0C-HIB0 K9F5608U0C-P K9F5608U0C-PCB0 K9F5608U0C-PIB0 K9F5608U0C-V K9F5608U0C-VCB0 K9F5608U0C-VIB0 K9F5608U0C-Y K9F5608U0C-YCB0 K9F5608U0C-YIB0 K9F1208Q0A K9F5616U0C K9F5616U0C-D K9F5616U0C-DCB0 K9F5616U0C-DIB0 K9F5616U0C-H K9F5616U0C-HCB0 K9F5616U0C-HIB0 K9F5616U0C-P K9F5616U0C-PCB0 K9F5616U0C-PIB0 K9F5616U0C-Y K9F5616U0C-YCB0 K9F5616U0C-YIB0 K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-H K9F5616Q0C-HCB0 K9F5616Q0C-HIB0 K9F1208Q0A-XXB0 K9F5608D0C-H K9F5608D0C-D K9F5608D0C-Y K9F5608D0C-P K9F5608U0M
OCR Text	... device(K9F5608X0C) : (512 + 16)byte - X16 device(K9F5616X0C) : (256 + 8)Word - Block Erase : - X8 device(K9F5608X0C) : (16K + 512)byte - X16 device(K9F5616X0C) : ( 8K + 256)Word * Page Read Operation - Page Size - X8 device(K9F5608X0C) : (...
Description	32M x 8 Bit NAND Flash Memory 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata
File Size	653.97K / 39 Page	View it Online	Download Datasheet

				Samsung Electronics Inc SAMSUNG[Samsung semiconductor]
Part No.	K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0
OCR Text	...s) status is defined by the 6th byte in the spare area. Samsung makes sure that either the 1st or 2nd page of every invalid block has 00h data at the column address of 517. 4. Added a new card-type package : K9S5608U0M-MCB0 1. Changed Endur...
Description	From old datasheet system EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC 32M x 8 Bit NAND Flash Memory
File Size	350.10K / 26 Page	View it Online	Download Datasheet

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