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  dc-440 Datasheet PDF File

For dc-440 Found Datasheets File :: 7866    Search Time::1.75ms    
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    ZDT1048

ZETEX[Zetex Semiconductors]
Part No. ZDT1048
OCR Text ... 0.8 +175C 0.6 0.4 0.2 1mA DC 1s 100ms 10ms 1ms 100us 10mA 100mA 1A 10A 100A 100mV 1V 10V 100V IC-Collector Current VCE - Collector Voltage VBE(on) v IC 3 - 359 Safe Operating Area
Description DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS

File Size 56.39K  /  3 Page

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    ZHCS500 UZHCS500 ZHCS500TA

ZETEX[Zetex Semiconductors]
Diodes Incorporated
Part No. ZHCS500 UZHCS500 ZHCS500TA
OCR Text ...rent Capability APPLICATIONS: * DC - DC converters * Mobile telecomms * PCMCIA PARTMARK DETAIL: ZS5 7 1 ZHCS500 C 1 A 3 2 3 SO...440 15 20 10 300 350 460 550 670 780 1050 40 MAX. UNIT V mV mV mV mV mV mV mV mV A pF ns CONDITIONS....
Description DIODE SCHOTTKY SOT-23
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT?/a>
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT”
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT
SOT23 SILICON HIGH CURRENT
0.5 A, SILICON, SIGNAL DIODE
High Current Schottky Diode

File Size 101.61K  /  3 Page

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    ZHCS750

ZETEX[Zetex Semiconductors]
Diodes Incorporated
Part No. ZHCS750
OCR Text ...rent Capability APPLICATIONS: * DC - DC converters * Mobile telecomms * PCMCIA PARTMARK DETAIL: ZS7 2 A 3 3 SOT23 ABSOLUTE MAXI...440 530 50 25 12 280 310 350 420 490 540 650 100 MAX. UNIT V mV mV mV mV mV mV mV A pF ns CONDITIONS...
Description High Current Schottky Diode
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE B>SuperBAT
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT”
SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT

File Size 165.10K  /  3 Page

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    ZHCS756

Diodes Incorporated
ZETEX[Zetex Semiconductors]
Part No. ZHCS756
OCR Text ...rent Capability APPLICATIONS: * DC - DC converters * Mobile telecomms * PCMCIA PARTMARK DETAIL: S76 7 1 ZHCS756 C 1 A 3 2 3 SO...440 520 600 760 50 17 12 290 330 410 500 610 700 900 100 MAX. UNIT V mV mV mV mV mV mV mV A pF ns CO...
Description SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT?/a>
High Current Schottky Diode
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT”
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE B>SuperBAT

File Size 161.16K  /  3 Page

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    ZVP4424Z

ZETEX[Zetex Semiconductors]
Diodes Incorporated
Part No. ZVP4424Z
OCR Text ...CTERISTICS 1 0.1 0.01 DC 1s 100ms 10ms 1ms 100s 0.001 1 10 100 1k VDS - Drain Source Voltage (V) Safe Operating Area Z...440 ZVP4424Z TYPICAL CHARACTERISTICS -Gate Source Voltage (Volts) 300 Note:VGS=0V 0 -2 -...
Description    P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
SOT89 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

File Size 95.78K  /  4 Page

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    IRU3138 IRU3138CS

IRF[International Rectifier]
Part No. IRU3138 IRU3138CS
OCR Text ...ry and general purpose on-board DC to DC converter. Modern micro processors combined with DDR memory, need high-speed bandwidth data bus whi...440 2 IRU3138 PARAMETER Error Amp Fb Voltage Input Bias Current Fb Voltage Input Bias Current...
Description Synchronous PWM Controller for Termination Power Supply Applications in a 14-Pin SOIC package

File Size 278.56K  /  18 Page

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    K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text ...lse width is measured at VSS DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.) Max Parameter Input Leakage Current (Any input 0VINVIN+0.3V, all other input pins not under test=0 Volt) 3.3V Outpu...
Description 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle.
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.

File Size 525.70K  /  34 Page

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    KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5
OCR Text ...0ns which is measured at VSS DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.) Parameter Input Leakage Current (Any input 0VINVCC+0.5V, all other pins not under test=0 Volt) Output Leakage Curre...
Description 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns

File Size 826.10K  /  35 Page

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    KM416C4000C KM416C4100C KM416C4000CS-5

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416C4000C KM416C4100C KM416C4000CS-5
OCR Text ...0ns which is measured at VSS DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.) Parameter Input Leakage Current (Any input 0VINVCC+0.5V, all other pins not under test=0 Volt) Output Leakage Curre...
Description 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns

File Size 898.34K  /  35 Page

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    KM416C4004C KM416C4104C KM416C4004CS-5

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416C4004C KM416C4104C KM416C4004CS-5
OCR Text ...0ns which is measured at VSS DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.) Parameter Input Leakage Current (Any input 0VINVCC+0.5V, all other pins not under test=0 Volt) Output Leakage Curre...
Description 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns

File Size 943.13K  /  36 Page

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