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ZP Semiconductor
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Part No. |
IRLML2502TRPBF
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OCR Text |
...rocessing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet ? power mosfets are well known for, provides the designer with an... |
Description |
HEXFETPower MOSFET
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File Size |
319.49K /
2 Page |
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it Online |
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SiTime Corp.
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Part No. |
SIT1576
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OCR Text |
... 1000c. episeal creates an extremely strong, clean, vacuum chamber that encapsulate s the mems resonator and ensures the best performance and reliability. during episeal, a poly silicon cap is grown on top of the reso... |
Description |
1.2mm2 uPower, Low-Jitter, 1Hz - 2.5 MHz Super-TCXO
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File Size |
992.51K /
10 Page |
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it Online |
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SiTime Corp.
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Part No. |
SIT1568
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OCR Text |
...1000c. episeal creates an extremely strong, clean, vacuum chamber that encapsulates the mems resonator and ensures the best performance and reliability. during episeal, a poly silicon cap is gro wn on top ... |
Description |
1.2mm2Micropower, 5 ppm, 32.768 kHz TCXO with In-System Auto-Calibration
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File Size |
825.66K /
12 Page |
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it Online |
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SiTime Corp.
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Part No. |
SIT1566
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OCR Text |
... 1000c. episeal creates an extremely strong, clean, vacuum chamber that encapsulates the mems resonator and e nsures the best performance and reliability. during episeal, a poly silicon cap is grown on top of the reso... |
Description |
1.2mm2 uPower, Low-Jitter, 3 & 5 ppm, 32.768 kHz Super-TCXO
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File Size |
798.93K /
9 Page |
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it Online |
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SiTime Corp.
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Part No. |
SIT1552
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OCR Text |
... 1000c. episeal creates an extremely strong, clean, vacuum chamber that encapsulates the mems resonator and ensures the best performance and reliability. during episeal, a poly silicon cap is grown on top of the reso... |
Description |
Smallest (1.2mm2), Smallest (1.2mm2), Ultra-Low Power, 32.768 kHz
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File Size |
682.68K /
11 Page |
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it Online |
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Price and Availability
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