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				IRF[International Rectifier]
Part No.	IRF1405L IRF1405S
OCR Text	... S Benefits q q q q q q ID = 131A Description Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET...
Description	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A? Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?) 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	153.38K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1405
OCR Text	... S Benefits q q q q q q ID = 169A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resista...
Description	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A? Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A) Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)
File Size	114.28K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF1407L IRF1407S IRF1407STRR
OCR Text	...for lowprofile applications. ID = 100AV D2Pak IRF1407S TO-262 IRF1407L Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?) Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A) Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A) TRANSISTOR \| MOSFET \| N-CHANNEL \| 75V V(BR)DSS \| 100A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 75V的五（巴西）直\| 100号A（丁）\|63AB
File Size	158.12K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1407
OCR Text	...q q q q q q RDS(on) = 0.0078 ID = 130AV Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resist...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A? Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?) POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ) Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A) Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)
File Size	126.10K / 9 Page	View it Online	Download Datasheet

				International Rectifier Seme LAB
Part No.	IRF140SMD
OCR Text	....7 6 (0 .0 3 0 ) m in . VDSS ID(cont) RDS(on) FEATURES 100V 13.9A W 0.077W 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) * HERMETICALLY SEALED SURFACE MOUNT PACKAGE * SMALL FOOTPRIN...
Description	N-CHANNEL POWER MOSFET
File Size	22.30K / 2 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF150SMD
OCR Text	....7 6 (0 .0 3 0 ) m in . VDSS ID(cont) RDS(on) FEATURES 100V 19A W 0.070W 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) * HERMETICALLY SEALED SURFACE MOUNT PACKAGE * SMALL FOOTPRINT ...
Description	N-CHANNEL POWER MOSFET
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1607
OCR Text	...q q q q q q RDS(on) = 0.0075 ID = 142A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resista...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)
File Size	179.50K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1704
OCR Text	...DSS = 40V RDS(on) = 0.004 G ID = 170A S Description Specifically designed for Automotive applications, this HEXFET(R) power MOSFET has a 200C max operating temperature with a Stripe Planar design that utilizes the latest processing...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A) POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)
File Size	100.05K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1902 IRF1B902 IRF1902TR
OCR Text	...85@VGS = 4.5V 170@VGS = 2.7V ID 4.0A 3.2A These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the...
Description	20V Single N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=20V)
File Size	105.83K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2204
OCR Text	...atures RDS(on) = 3.6m ID = 210A Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Add...
Description	40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	138.67K / 9 Page	View it Online	Download Datasheet

For i.d. Found Datasheets File :: 75584 Search Time::5.297ms
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