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  id-6.6a Datasheet PDF File

For id-6.6a Found Datasheets File :: 3887    Search Time::3.766ms    
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    FQA46N1507 FQA46N15F109

Fairchild Semiconductor
Part No. FQA46N1507 FQA46N15F109
OCR Text ...e Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (...6.0 250 1.67 -55 to +175 300 Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal R...
Description 150V N-Channel MOSFET

File Size 778.65K  /  9 Page

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    ZXMC3A18DN8 ZXMC3A18DN8TA ZXMC3A18DN8TC

Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
Part No. ZXMC3A18DN8 ZXMC3A18DN8TA ZXMC3A18DN8TC
OCR Text ...(BR)DSS= 30V : RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035 ; ID= -6.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance wi...
Description COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET 7.6 A, 30 V, 0.025 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
N & P-channel MOSFET

File Size 183.69K  /  8 Page

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    FQA13N8007 FQA13N80F109

Fairchild Semiconductor
Part No. FQA13N8007 FQA13N80F109
OCR Text ...e Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (...6 8.0 50.4 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Ga...
Description 800V N-Channel MOSFET

File Size 830.05K  /  8 Page

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    SI5475DDC SI5475DDC-T1-GE3

Vishay Siliconix
Part No. SI5475DDC SI5475DDC-T1-GE3
OCR Text ... - 2.5 V 0.052 at VGS = - 1.8 V ID (A) - 6a - 6a -6 a FEATURES Qg (Typ.) 20 nC * Halogen-free * TrenchFET(R) Power MOSFET RoHS APPLICATIONS * Load Switch for Portable Devices COMPLIANT 1206-8 ChipFET 1 D D D D S D D G ...
Description P-Channel 12-V (D-S) MOSFET

File Size 106.40K  /  7 Page

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    AOTF12N50 AOT12N50

Alpha & Omega Semiconductors
Part No. AOTF12N50 AOT12N50
OCR Text ... Features VDS (V) =600V@150C ID = 12A RDS(ON)< 0.52 (V GS = 10V) 100% UIS Tested! 100% R g Tested! TO-220 Top View TO-220F...6 48 5.5 454 908 5 208 1.7 -50 to 150 300 AOT12N50 65 0.5 0.6 12* 7.6* 50 0.4 Symbol RJA A ...
Description 500V, 12A N-Channel MOSFET

File Size 176.32K  /  6 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF0911A_1 MGF0911A MGF0911A1
OCR Text ...ED BIAS CONDITIONS * VDS=10V * ID=2.6A * Rg=50 * Refer to Bias Procedure 1 GATE 2 SOURCE(FLANGE) GF-21 3 DRAIN ABSOLUTE MAXIMUM R...6 GATE TO SOURCE VOLTAGE VGS(V) DRAIN TO SOURCE VOLTAGE VDS(V) PO & add vs. Pin (f=2.3GHz) ...
Description L, S BAND POWER GaAs FET

File Size 28.87K  /  4 Page

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    SMBJ4728 SMBJ475X

Microsemi Corporation
Part No. SMBJ4728 SMBJ475X
OCR Text ...dif f erent tole ra nce s a s id en tified by suffi x letter on t he pa rt numbe r. this su rface mo unt prod uct serie s with lo wer t...6 3.9 4.3 76 69 64 58 10 10 9 9 100 100 50 10 1 1 1 1 276 252 234 217 400 40...
Description (SMBJ4728 - SMBJ4764) SILICON 2.0 Watt ZENER DIODES

File Size 216.43K  /  3 Page

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    AO3409 KO3409

Guangdong Kexin Industrial Co.,Ltd
Part No. AO3409 KO3409
OCR Text ... Unit: mm +0.1 2.4-0.1 ID = -2.6 A (VGS = -10V) RDS(ON) < 130m RDS(ON) < 200m (VGS = -10V) (VGS = -4.5V) +0.1 1.3-0.1 VDS (V) = -30V 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +...
Description P-Channel Enhancement Mode Field Effect Transistor

File Size 50.80K  /  2 Page

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